Рубрики:
Surfaces and Interfaces, Thin Films
Кл.слова (ненормированные):
Ac voltage -- External fields -- Magnetization hysteresis -- Repolarization -- Temperature dependence
Аннотация: A setup is developed for measuring the ME E effect by fixing the amplitude of magnetization oscillations upon the repolarization of a sample, caused by the application of ac voltage to the sample plates. The temperature dependence of the ME E effect in a Ga2 - xFexO3 single-crystal sample is measured in external fields from 0.25 to 1 kOe at temperatures from 77.4 to 280 K. It is established that the effect disappears when the Curie temperature is attained. The hysteresis of the magnetoelectric effect related to the magnetization hysteresis is measured. © 2014 Pleiades Publishing, Ltd.
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Доп.точки доступа:
Freydman, A. L.; Фрейдман, Александр Леонидович; Балаев, Александр Дмитриевич