/ N. V. Volkov [et al.]> // J. Phys. D. - 2009. -
Vol. 42,
Is. 6. - Ст. 65005,
DOI 10.1088/0022-3727/42/6/065005. - Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS).
. - ISSN 0022-3727
РУБ Physics, Applied
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.
WOS,
Scopus,
Для получение полного текста обратитесь в библиотеку
Держатели документа: [Volkov, N. V.
Eremin, E. V.
Tsikalov, V. S.
Patrin, G. S.
Kim, P. D.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Dept Phys, Krasnoyarsk 660041, Russia
[Seong-Cho, Yu
Kim, Dong-Hyun] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Chau, Nguyen] Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН
Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Department of Physics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Center for Materials Science, National University of Hanoi, 334 Nguyen Trai, Hanoi, Viet Nam
Доп.точки доступа: Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. H.; Chau, N.; RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]