/ N. O. Azarapin, N. A. Khritokhin, V. V. Atuchin [et al.]> // Crystals. - 2023. -
Vol. 13,
Is. 6. - Ст. 903,
DOI 10.3390/cryst13060903. - Cited References: 65. - The work was partially carried out using the resources of the Research Resource Center “Natural Resources Management and Physico-Chemical Research” (Tyumen University) with financial support from the Ministry of Science and Higher Education of the Russian Federation (contract No. 05.594.21.0019., Unique identification number RFMEFI59420X0019). M.S. Molokeev was supported by the Tyumen Oblast Government, as part of the West-Siberian Interregional Science and Education Center’s project No. 89-DON (3). - The authors would like to thank the staff of the Engineering Center of the Tyumen State University (special Alexej V. Matigorov) for their help in carrying out physical and chemical tests
. - ISSN 2073-4352
Перевод заглавия: Кинетика и механизм окисления BaLaCuS3
Аннотация: The oxidation reactions of BaLaCuS3 in the artificial air atmosphere were studied at different heating rates in the temperature range of 50–1200 °C. The oxidation stages were determined by DSC-TG,
XRD and IR–vis methods. The kinetic characteristics of the proceeding reactions were obtained with the use of the Kissinger model in a linearized form. Compound BaLaCuS3 was stable in the air up to 280 °C. Upon further heating up to 1200 °C, this complex sulfide underwent three main oxidation stages. The first stage is the formation of BaSO4 and CuLaS2. The second stage is the oxidation of CuLaS2 to La2O2SO4 and copper oxides. The third stage is the destruction of La2O2SO4. The final result of the high-temperature treatment in the artificial air atmosphere was a mixture of barium sulfate, copper (II) oxide and La2CuO4. The mechanism and stages of BaLaCuS3 oxidation and further interactions of the components were discussed.
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Держатели документа: Department of Inorganic and Physical Chemistry, Tyumen State University, Tyumen 625003, Russia
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090, Russia
Research and Development Department, Kemerovo State University, Kemerovo 650000, Russia
Department of Industrial Machinery Design, Novosibirsk State Technical University, Novosibirsk 630073, Russia
R&D Center “Advanced Electronic Technologies”, Tomsk State University, Tomsk 634034, Russia
Laboratory for Nanomaterials and Nanoelectronics, Center for Nature-Inspired Engineering, Technology Park, Tyumen State University, Tyumen 625003, Russia
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Laboratory of Theory and Optimization of Chemical and Technological Processes, University of Tyumen, Tyumen 625003, Russia
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk 660041, Russia
Hybrid Nanodevice Research Group (HNRG), Department of Electrical Engineering, Indian Institute of Technology Indore, Indore 453552, India
Centre for Advanced Electronics (CAE), Indian Institute of Technology Indore, Indore 453552, India
School of Engineering, RMIT University, Melbourne, VIC 3001, Australia
Institute of Solid State Chemistry, UB RAS, Yekaterinburg 620990, Russia
Доп.точки доступа: Azarapin, N. O.; Khritokhin, N. A.; Atuchin, V. V.; Gubin, A. A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Mukherjee, S.; Andreev, O. V.