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    Anomalous resistivity and the electron-polaron effect in the two-band hubbard model with one narrow band
/ M. Y. Kagan, V. V. Val'kov // J. Supercond. Nov. Magn. - 2012. - Vol. 25, Is. 5. - P. 1379-1382, DOI 10.1007/s10948-012-1523-3. - Cited References: 28. - We are grateful to P. Fulde, Yu. Kagan, K. I. Kugel, N.V. Prokof'ev, P. Nozieres, and C. M. Varma for the numerous stimulating discussions. We acknowledge financial support of the RFBR Grant No. 11-02-00741. . - ISSN 1557-1939
РУБ Physics, Applied + Physics, Condensed Matter

Аннотация: We search for anomalous normal and superconductive behavior in the two-band Hubbard model with one narrow band. We analyze the influence of the electron–polaron effect and the Altshuler–Aronov effect on effective mass enhancement and scattering times of heavy and light components in the clean case. We find anomalous behavior of resistivity at high temperatures T>W∗hT > W_{h}^{*} both in 3D and 2D situations. The SC instability in the model is governed by an enhanced Kohn–Luttinger effect for p-wave pairing of heavy electrons via polarization of light electrons.

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Держатели документа:
[Kagan, M. Y.] PL Kapitza Inst Phys Problems, Moscow 119334, Russia
[Val'kov, V. V.] Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
P.L. Kapitza Institute for Physical Problems, Kosygina st. 2, 119334 Moscow, Russian Federation
Kirenskii Institute of Physics, Akademgorodok 50, Building 38, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Каган, Максим Юрьевич

    Electrical and dielectrical propeties of gas-sensor resistive type Bi2Sn2O7
/ L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 503-506, DOI 10.4028/www.scientific.net/SSP.215.503. - Cited References: 14. - This work was supported by the Russian Foundation for Basic Research projects no. 12-02-00125-а . - ISSN 978-30383. - ISSN 1662-9779
   Перевод заглавия: Электрические и диэлектрические свойства резистивного типа газовых сенсоров на основе Bi2Sn2O7

Кл.слова (ненормированные):
crystallographic structure -- polymorphic transformations -- electrical resistivity -- dielectric permeability

Аннотация: Polycrystalline samples of Bi2Sn2O7 have been synthesized by conventional solid-state reaction method. According to the X-ray powder diffraction research, our sample co-existing of two polymorphs phases: cubic and rhombic, concurrently. The real dielectric permeability Re (ε) monotonic grows versus temperature and the imaginary dielectric permeability Im (ε) nonmonotonic is increased at the heating. There are maxima at Т=450 K on both temperature dependences Im (ε) and Re (ε) reveal. Anomalies in the temperature dependence of electrical resistivity at temperatures are found and to be correlated with the α → β structural phase transition temperature.


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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Sitnicov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)

    Effect of Mn doping on magnetic and dielectric properties of Bi2Sn2O7
/ L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 105-108, DOI 10.4028/www.scientific.net/SSP.233-234.105 . - ISSN 1662-9779. - ISSN 978-3-038
Аннотация: The Bi2(Sn0.95Mn0.05)2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic has been synthesized for the first time by solid-phase synthesis. The magnetic, dielectric and electrical properties of the compound have been studied. Anomalies in the temperature dependences of the electrical resistance and magnetic propoties have been found. These features are explained as martensitic phase transitions.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Eremin, E. V.; Еремин, Евгений Владимирович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)

    Влияние катионного замещения на полиморфные переходы в пирасаннате висмута Bi2Sn2O7
/ Л. В. Удод, М. Н. Ситников // Вестник СибГАУ. - 2015. - Т. 16, № 4. - С. 975-982. - Библиогр.: 53. - Работа выполнена при финансовой поддержке Российского фонда фундаментальных исследований, грант № 15-42-04099 р_сибирь_а, и государственного задания № 114090470016 . - ISSN 1816-9724
Аннотация: Рассмотрена разработка технологии новых сенсорных материалов, необходимых для газочувствительных приборов, применяемых в ракетостроении. Целью данной работы является изучение влияния допирования разновалентными катионами на кристаллографическую структуру, диэлектрические и электрические свойства пирохлорного соединения Bi 2Sn 2O 7, обладающего селективной избирательностью к газам. Методом твердофазного синтеза впервые синтезированы соединения Bi2(Sn1-xMex)2O7, где Me = Mn, Cr, x = 0, 0,05, находящиеся сразу в двух полиморфных модификациях - орторомбической и кубической. В твердых растворах Bi2(Sn0,95Cr0,05)2O 7 методом сканирующей калориметрии обнаружено два новых структурных перехода, по сравнению со станнатом висмута Bi2Sn2O7. Ионы Mn 4+ сместили фазовые границы полиморфных переходов в сторону меньших температур, а фазовый α→β-переход около 370 К, характерный для Bi2(Sn1-xCrx)2O7, где x = 0, 0,05, подавили почти полностью. Полиморфный переход при Т = 543 К для Bi 2(Sn0,95Mn0,05) 2O 7 протекает с выделением тепла, в отличие от Bi2(Sn1-xCrx)2O7, где x = 0, 0,05. Исследована взаимосвязь структурных, электрических и диэлектрических свойств. Установлены аномалии в температурной зависимости электросопротивления и диэлектрической проницаемости (мнимой и реальной частями) как в области низких температур, так и при высоких температурах. Эти особенности объясняются в рамках модели мартенситных фазовых переходов. Методом сканирующей калориметрии найдены температуры структурных фазовых переходов, которые коррелируют с аномалиями электросопротивления в интервале температур 300 < T < 1000 К для Bi2(Sn1-xCrx)2O7, x = 0, 0,05.
The goal of this work is to develop a new technology of sensor materials required for gas sensing devices used in missile. The aim of this work is to study the effect of doping cations with different valency on the crystallographic structure, dielectric and electrical properties of pyrochlore compound Bi2Sn2O7 with selectivity to gases. Polycrystalline compounds Bi2(Sn1-xMex)2O7, where Me = Mn, Cr, x = 0, 0.05 have been synthesized by conventional solid-state reaction. According to the X-ray powder diffraction research, our sample consists of two polymorphs phases: cubic and rhombic. Two new structural transition are found in Bi2(Sn0.95Cr0.05)2O7 solid solutions by scanning calorimetry, as compared to bismuth pyrostannate Bi2Sn2O7. Ions Mn 4+ leads to shift of phase boundary of polymorphic transitions towards lower temperatures, and the phase α→β-transition at about 370 K, which is characteristic for Bi2(Sn1-xCrx)2O7, where x = 0, 0.05 is suppressed. The polymorphic transition at T = 543 K for Bi2(Sn0.95Mn0.05)2O7 occurs with calorification, in contrast to Bi2(Sn1-xCrx)2 7, where x = 0, 0.05. The relationship between structural, electrical and dielectric properties is investigated. Anomalies in the temperature dependence of electrical resistivity and dielectric permeability (real and imaginary part) as in the low region temperatures as in the high region temperature are found. These features are explained within a model of martensitic phase transitions. The temperature of the structural phase transitions correlates with temperature of maximum of the electrical resistivity in the temperature range 300 < T < 1000 K for Bi2(Sn1-xCrx)2O7, x = 0, 0.05 was found by scanning calorimetry method.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Ситников, Максим Николаевич; Sitnikov, M.N.; Udod, L. V.

    Structural, electrical and magnetic study of manganites Pr0.6Sr0.4MnO3 thin films
/ D. S. Neznakhin [et al.] // J. Phys. Conf. Ser. - 2016. - Vol. 690, Is. 1, DOI 10.1088/1742-6596/690/1/012002. - Cited References: 20. - The work was supported partly by RFBR, grant №14-02-01211, Grant of President of Russian Federation №NSh-2886.2014.2, and by The Ministry of Education and Science of the Russian Federation, project №2582. . - ISSN 1742-6588
   Перевод заглавия: Структурные, электрические и магнитные исследования тонких пленок манганита Pr0.6Sr0.4MnO3
Аннотация: Thin polycrystalline Pr0.6Sr0.4MnO3 films were grown on the Y stabilized zirconium oxide substrates by magnetron sputtering using RF power and off-axis sputtering scheme with double cathodes. Only one polycrystalline phase with structural parameters consistent with that for the corresponding bulk sample was revealed in the films. Electric resistivity dependence on temperature demonstrates the shape characteristic for the substances with the Mott transition. The difference between magnetization temperature curves measured in the zero field cooling and field cooling modes was revealed. Magnetization field dependences were presented by the hysteresis loops changing their form with temperature. © Published under licence by IOP Publishing Ltd.

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Доп.точки доступа:
Neznakhin, D. S.; Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Molokeev, M. S.; Молокеев, Максим Сергеевич; Semenov, S. V.; Семёнов, Сергей Васильевич; Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics(St. Petersburg)(17 ; 23 - 27 Nov. 2015)

    Electronic Structure of p-Type La1-xMx2+MnO3 Manganites in the Ferromagnetic and Paramagnetic Phases in the LDA plus GTB Approach
/ V. A. Gavrichkov [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 5. - P. 860-876, DOI 10.1134/S1063776111030101. - Cited References: 47. - This study was supported financially by integration project no. 40 of the Ural and Siberian Branches of the Russian Academy of Sciences, the program "Strong Electron Correlations" of the Russian Academy of Sciences, and the Russian Foundation for Basic Research (project no. 10-02-00251-a). . - ISSN 1063-7761
РУБ Physics, Multidisciplinary
Рубрики:
DOUBLE-EXCHANGE
   COLOSSAL MAGNETORESISTANCE

   THIN-FILMS

   PHYSICS

   LA1-XSRXMNO3

   RESISTIVITY

   SEPARATION

   TRANSPORT

   MODEL

Кл.слова (ненормированные):
Complex structure -- Cubic materials -- Ferromagnetic phase -- Half metals -- Jahn Teller effect -- Metal properties -- Metal types -- Orbitals -- P-type -- Paramagnetic phase -- Paramagnetic phasis -- Quasi particles -- Spectral intensity -- Spin projections -- Strong electron correlations -- Barium -- Density functional theory -- Electron correlations -- Electron density measurement -- Electronic properties -- Electronic structure -- Fermi level -- Ferromagnetic materials -- Ferromagnetism -- Manganese oxide -- Manganites -- Paramagnetic materials -- Paramagnetism -- Valence bands -- Lanthanum

Аннотация: The band structure, spectral intensity, and position of the Fermi level in doped p-type La1-xMx2+ MnO3 manganites (M = Sr, Ca, Ba) is analyzed using the LDA + GBT method for calculating the electronic structure of systems with strong electron correlations, taking into account antiferro-orbital ordering and using the Kugel-Khomskii ideas and real spin S = 2. The results of the ferromagnetic phase reproduce the state of a spin half-metal with 100% spin polarization at T = 0, when the spectrum is of the metal type for a quasiparticle with one spin projection and of the dielectric type for the other. It is found that the valence band becomes approximately three times narrower upon a transition to the paramagnetic phase. For the paramagnetic phase, metal properties are observed because the Fermi level is located in the valence band for any nonzero x. The dielectrization effect at the Curie temperature is possible and must be accompanied by filling of d(x) orbitals upon doping. The effect itself is associated with strong electron correlations, and a complex structure of the top of the valence band is due to the Jahn-Teller effect in cubic materials. DOI: 10.1134/S1063776111030101

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Держатели документа:
[Gavrichkov, V. A.
Ovchinnikov, S. G.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Gavrichkov, V. A.
Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Nekrasov, I. A.] Russian Acad Sci, Ural Branch, Inst Electrophys, Ekaterinburg 620016, Russia
[Pchelkina, Z. V.] Russian Acad Sci, Ural Branch, Inst Met Phys, Ekaterinburg 620990, Russia
ИФ СО РАН
Siberian Branch, Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Ural Branch, Institute of Electrophysics, Russian Academy of Sciences, Yekaterinburg, 620016, Russian Federation
Ural Branch, Institute of Metal Physics, Russian Academy of Sciences, Yekaterinburg, 620990, Russian Federation

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nekrasov, I. A.; Pchelkina, Z. V.

    Magnetoresistance of substituted lanthanum manganites La0.7Ca0.3MnO3 upon nonequilibrium overheating of carriers
/ K. A. Shaykhutdinov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 8. - Ст. 83711, DOI 10.1063/1.3573666. - Cited References: 15. - This study was partially supported by the Russian Foundation for Basic Research, project no. 08-02-00259a, and the Lavrent'ev's Competition of Young Scientists of the Siberian Branch of the RAS, project no. 12. . - ISSN 0021-8979
РУБ Physics, Applied

Аннотация: Current-voltage characteristics of the polycrystalline substituted lanthanum manganite La0.7Ca0.3MnO3 were experimentally studied at T - 77.4 K in magnetic fields up to 13 kOe. In these characteristics, a portion of negative differential resistivity was observed above a certain threshold value of critical current density j caused, in our opinion, by nonequilibrium heating of the electron gas due to low thermal conductivity of the manganite material. Because of the nonlinearity of the current-voltage characteristics, the field dependences of resistivity rho( H) appear extremely sensitive to the value of a transport current. In this case, the rho( H) dependences reveal both ordinary negative and positive magnetoresistance. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573666]

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Держатели документа:
[Shaykhutdinov, K. A.
Semenov, S. V.
Popkov, S. I.
Balaev, D. A.
Bykov, A. A.
Dubrovskiy, A. A.
Petrov, M. I.
Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Shaykhutdinov, K. A.
Popkov, S. I.
Balaev, D. A.
Dubrovskiy, A. A.
Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Semenov, S. V.; Семенов, Сергей Васильевич; Popkov, S. I.; Попков, Сергей Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Bykov, A. A.; Быков, Алексей Анатольевич; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Petrov, M. I.; Петров, Михаил Иванович; Volkov, N. V.; Волков, Никита Валентинович

    Low-temperature resistance and magnetoresistance hysteresis in polycrystalline (La0.5Eu0.5)(0.7)Pb0.3MnO3
/ K. A. Shaykhutdinov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 5. - Ст. 53711, DOI 10.1063/1.3559303. - Cited References: 20. - This study was partially supported by the Russian Foundation for Basic Research, Project No. 08-02-00259a and the Lavrentyev Competition of the Young Scientists' Projects of the Siberian Branch of the Russian Academy of Sciences, Project No. 12. . - ISSN 0021-8979
РУБ Physics, Applied

Аннотация: The behavior of temperature dependences of electrical resistance and magnetoresistance of polycrystalline substituted lanthanum manganite (La0.5Eu0.5)(0.7)Pb0.3MnO3 at low temperatures was thoroughly studied. A broad hysteresis was found in the field dependences of electrical resistance in the low-temperature region. Above 40 K, no hysteresis feature was observed. The temperature T = 40 K corresponds to the temperature of minimum electrical resistance and the temperature T-N to the antiferromagnet-paramagnet phase transition of the material of the intergrain boundaries. In this work we propose a model which explains the observed features of the rho(T) and rho(H) curves at temperatures below T-N by the formation of a network of ferromagnet-antiferromagnet-ferromagnet tunnel contacts. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559303]

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Держатели документа:
[Shaykhutdinov, K. A.
Popkov, S. I.
Semenov, S. V.
Balaev, D. A.
Dubrovskiy, A. A.
Sablina, K. A.
Sapronova, N. V.
Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Shaykhutdinov, K. A.
Balaev, D. A.
Dubrovskiy, A. A.
Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Семенов, Сергей Васильевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Sablina, K. A.; Саблина, Клара Александровна; Sapronova, N. V.; Volkov, N. V.; Волков, Никита Валентинович

    Anomalous resistivity and superconductivity in the two-band Hubbard model with one narrow band (Review)
/ M. Y. Kagan, V. V. Valkov // Low Temp. Phys. - 2011. - Vol. 37, Is. 1. - P. 69-82 ; Физика низких температур, DOI 10.1063/1.3552118. - Cited References: 62. - We thank A.S. Alexandrov, A.F. Andreev, M.A. Baranov, Yu. Bichkov, A.V. Chubukov, D.V. Efremov, A.S. Hewson, K.A. Kikoin, F.V. Kusmartsev, P. Nozieres, T.M. Rice, A.O. Sboychakov, P. Thalmeer, C.M. Varma, D. Vollhardt, P. Woelfle, A. Yaresko and, especially, P. Fulde, Yu. Kagan, K.I. Kugel, and N.V. Prokof'ev for many simulating discussions on this subject and acknowledge the financial support of RFBR grants # 08-02-00224 and 08-02-00212. M.Yu.K. is also grateful to the Leverhulme trust for a grant to visit Loughborough University, where this work was completed. . - ISSN 1063-777X
РУБ Physics, Applied

Аннотация: We search for marginal Fermi-liquid behavior in the two-band Hubbard model with one narrow band. We consider the limit of low electron densities in the bands and strong intraband and interband Hubbard interactions. We analyze the influence of electron-polaron effects and other mechanisms for mass-enhancement (related to the momentum dependence of the self-energies) on the effective mass and scattering times of light and heavy components in the clean case (electron-electron scattering and no impurities). We find a tendency towards phase separation (towards negative partial compressibility of heavy particles) in the 3D case with a large mismatch between the densities of heavy and light bands in the strong coupling limit. We also find that for low temperatures and equal densities, the resistivity in a homogeneous state R(T) proportional to T-2 behaves as a Fermi-liquid in both 3D and 2D. For temperatures greater than the effective bandwidth for heavy electrons T W-h*, the coherence of the heavy component breaks down completely. The heavy particles move diffusively in the surrounding light particles. At the same time, light particles scatter on heavy particles as if on immobile (static) impurities. Under these conditions, the heavy component is marginal, while the light component is not. The resistivity approaches saturation for T W-h* in the 3D case. In 2D the resistivity has a maximum and a localization tail owing to weak-localization corrections of the Altshuler-Aronov type. This behavior of resistivity in 3D could be relevant for some uranium-based heavy-fermion compounds such as UNi2Al3 and in 2D, for some other mixed-valence compounds, possibly including layered manganites. We also consider briefly the superconductive (SC) instability in this model. The leading instability tends to p-wave pairing and is governed by an enhanced Kohn-Luttinger mechanism for SC at low electron densities. The critical temperature corresponds to the pairing of heavy electrons via polarization of the light electrons in 2D. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552118]

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Держатели документа:
[Kagan, M. Yu.] Russian Acad Sci, PL Kapitza Phys Problems Inst, Moscow 119334, Russia
[Valkov, V. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
P.L.Kapitza Institute for Physical Problems of the Russian Academy of Sciences, 2 Kosygin St., Moscow 119334, Russian Federation
Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Valkov, V. V.; Вальков, Валерий Владимирович


    Dielectric properties of a mixed-valence Pb3Mn7O15 manganese oxide
/ N. V. Volkov [et al.] // J. Phys.: Condens. Matter. - 2010. - Vol. 22, Is. 37. - Ст. 375901, DOI 10.1088/0953-8984/22/37/375901. - Cited References: 14. - This study was supported by the Russian Foundation for Basic Research 'Siberia', project No. 09-02-98003, and the Siberian Branch of the Russian Academy of Sciences, integration project No. 101. . - ISSN 0953-8984
РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
cation -- lead -- manganese derivative -- oxide -- article -- chemical model -- chemistry -- crystallization -- electric conductivity -- electronics -- methodology -- temperature -- Cations -- Crystallization -- Electric Conductivity -- Electronics -- Lead -- Manganese Compounds -- Models, Chemical -- Oxides -- Temperature -- AC electric field -- Analysis of resistivity -- Carrier hopping -- Charge ordering -- Complex dielectric constant -- Crystal site -- Debye models -- Dielectric constants -- Dielectric spectra -- Frequency windows -- Lattice sites -- Low frequency -- Manganese ions -- Mixed valence -- Mixed valence state -- Relaxation behaviors -- Temperature range -- Electric fields -- Manganese -- Manganese oxide -- Permittivity -- Single crystals -- Crystal symmetry

Аннотация: We investigated the low-frequency dielectric properties of a Pb3Mn7O15 single crystal with manganese ions in the mixed-valence state (Mn3+/Mn4+). Dielectric relaxation was found in the frequency window from 20 to 100 kHz in the temperature range 110-180 K. The dielectric spectra of the crystal were analyzed using a Debye model. Estimations made within the model and analysis of resistivity data suggest that the relaxation behavior of the dielectric constant is related to polaronic charge carrier hopping. Around 250 K, charge ordering occurs in the crystal when the Mn3+ and Mn4+ ions are arranged in a specific order among the crystal sites. With a decrease in temperature, an ac electric field can induce a charge hop between the equivalent lattice sites available, related to crystal symmetry. This hopping is equivalent to the reorientation of an electric dipole that yields Debye-type behavior of the complex dielectric constant. The observed anisotropy in the behavior of the dielectric properties and resistivity can be attributed to a pronounced two-dimensional character of the crystal structure.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Sablina, K. A.
Sapronova, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia.
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Sablina, K. A.; Саблина, Клара Александровна; Sapronova, N. V.

    Peculiarity of interrelation between electronic and magnetic properties of HTSC cuprates associated with short-range antiferromagnetic order
/ S. G. Ovchinnikov [et al.] // J. Exp. Theor. Phys. - 2010. - Vol. 111, Is. 1. - P. 104-113, DOI 10.1134/S1063776110070101. - Cited References: 48. - This study was financially supported by the Russian Foundation for Basic Research (project nos. 09-02-01224 and 09-02-00127) and under the program "Quantum Physics of Condensed Media" of the Presidium of the Russian Academy of Sciences (project no. 5.7). . - ISSN 1063-7761
РУБ Physics, Multidisciplinary
Рубрики:
T-J MODEL
   NORMAL-STATE

   FERMI-SURFACE

   RESISTIVITY ANISOTROPY

   3-CENTER INTERACTIONS

   OPTICAL CONDUCTIVITY

   COPPER OXIDES

   CUO2 PLANES

   SUPERCONDUCTORS

   TRANSPORT

Кл.слова (ненормированные):
Anisotropic resistivity -- Antiferromagnetic orders -- Concentration dependence -- Cuprates -- Doping levels -- Electronic and magnetic properties -- Fermi surface topology -- High temperature superconducting -- Magnetic orders -- Magnetic state -- Maximum values -- Pseudo-gap -- Short-range magnetic orders -- Strong electron correlations -- Temperature dependence -- Anisotropy -- Antiferromagnetic materials -- Antiferromagnetism -- Copper compounds -- Correlators -- Electronic properties -- High temperature superconductors -- Hole concentration -- Magnetic properties -- Neon -- Superconducting magnets -- Single crystals

Аннотация: We report on the results of measurements of anisotropic resistivity of RBa(2)Cu(3)O(6 + x) (R = Tm, Lu) high-temperature superconducting single crystals in a wide range of doping levels, indicating a nontrivial effect of magnetic order on the electronic properties of cuprates. In particular, our results visually demonstrate the crossover from the state with moderate anisotropy of resistivity rho (c) /rho (ab) similar to 30 to a strongly anisotropic state with rho (c) /rho (ab) similar to 7 x 10(3) upon cooling as well as upon a decrease in the hole concentration in the CuO(2) planes. It is also shown that anisotropy is sensitive to the magnetic state of CuO(2) planes and attains its maximum value after the establishment of the long-range antiferromagnetic order. The results are discussed in the framework of the theory based on the t-t'-taEuro(3)-J model of CuO(2) layers taking into account strong electron correlations and short-range magnetic order. In this theory, anomalies of spin correlators and Fermi surface topology for a critical hole concentration of p* a parts per thousand 0.24 are demonstrated. The concentration dependence of the charge carrier energy indicates partial suppression of energy due to the emergence of a pseudogap at p < p*. This theory explains both the experimentally observed sensitivity of anisotropy in conductivity to the establishment of the antiferromagnetic order and the absence of anomalies in the temperature dependence of resistivity rho (ab) (T) in the vicinity of the N,el temperature.

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Держатели документа:
[Ovchinnikov, S. G.
Korshunov, M. M.] Russian Acad Sci, Kirenskii Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
[Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Korshunov, M. M.] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[Kozeeva, L. P.
Lavrov, A. N.] Russian Acad Sci, Nikolaev Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, University of Florida, Gainesville, FL 32611, United States
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Korshunov, M. M.; Коршунов, Максим Михайлович; Kozeeva, L. P.; Lavrov, A. N.; Лавров, Александр Николаевич

    Hysteretic behavior of the magnetoresistance and the critical current of bulk Y3/4Lu1/4Ba2CU3O7+CuOcomposites in a magnetic field
/ D. A. Balaev [et al.] // Physica C. - 2007. - Vol. 460: 8th International Conference on Materials and Mechanisms of Superconductivity and High Temperature Superconductors (JUL 09-14, 2006, Dresden, GERMANY). - P. 1307-1308, DOI 10.1016/j.physc.2007.03.346. - Cited References: 7 . - ISSN 0921-4534
РУБ Physics, Applied

Аннотация: The hysteretic behavior of critical current j(C)(H) and magneto-resistance R(H) of composites Y-Ba-Cu-O + CuO have been studied and presented. The composites represent the network of tunnel-type Josephson junctions where copper oxide acts as a material forming barriers between superconducting (YBCO) crystallites. The characteristic features of R(H) and j(C)(H) dependences are discussed in the frames of the conception of "two level superconducting system" (the Josephson media and HTSC crystallites) which is realized in the composites under study. (c) 2007 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Popkov, S. I.; Попков, Сергей Иванович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович

    Mossbauer magnetization and resistivity studies of Fe1.91V0.09BO4
/ N. V. Kazak [et al.] // Physica B. - 2005. - Vol. 359: International Conference on Strongly Correlated Electron Systems (SCES 04) (JUL 26-30, 2004, Karlsruhe, GERMANY). - P. 1324-1326, DOI 10.1016/j.physb.2005.01.396. - Cited References: 8 . - ISSN 0921-4526
РУБ Physics, Condensed Matter

Аннотация: Single crystals of Fe1.91V0.09BO4 were prepared by spontaneous crystallization using a solution melt technology for the first time and its structure, electronic and magnetic properties were investigated by X-ray diffraction, Mossbauer spectroscopy, magnetization and electrical measurements. Room-temperature Mossbauer measurements indicate that "localized" (Fe2+, Fe3+) and "delocalized" (Fe2.5+) states in ratio 0.31:0.345:0.345 distributed over two crystallographically non-equivalent positions exist. The results of magnetic measurements show that warwickite is a P-type ferrimagnet below T = 130 K. Resistivity measurements show a variable-range-hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. (c) 2005 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Krasnoyarsk State Tech Univ, Krasnoyarsk 660074, Russia
ИФ СО РАН
LV Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk, Russian Federation
Krasnoyarsk State Tech. University, 660074 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Balaev, A. D.; Балаев, Александр Дмитриевич; Ivanova, N. B.; Иванова, Наталья Борисовна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич

    Negative magnetoresistance of iron single-crystal whiskers in the course of magnetization reversal
/ Y. V. Zakharov, L. S. Titov // Phys. Solid State. - 2004. - Vol. 46, Is. 2. - P. 303-305, DOI 10.1134/1.1649428. - Cited References: 9 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
RESISTIVITY
   WALLS

Аннотация: The change in the low-temperature resistance of iron single-crystal whiskers during magnetization reversal form a single-domain state to a state with a plane-parallel domain structure is studied theoretically. The negative magnetoresistance (similar to45%) is calculated from the Kubo formula with due regard for the change in the trajectories of conduction electrons in a magnetic induction field of domains. The magnetoresistance thus calculated is of the same order of magnitude as the magnetoresistance obtained in the experiment performed by Isin and Coleman.(C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660062, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Krasnoyarsk State University, Svobodnyi pr. 79, Krasnoyarsk 660062, Russian Federation

Доп.точки доступа:
Titov, L. S.

    Influence of magnetic ordering on the resistivity anisotropy of alpha-MnS single crystal
/ S. S. Aplesnin [et al.] // Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197 ; Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197, DOI 10.1016/j.ssc.2003.09.028. - Cited References: 7 . - ISSN 0038-1098. - Вариант Sopus
РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
anisotropy of resistivity -- optical gap -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds

Аннотация: The resistivity and the optical absorbtion spectra of single crystal alpha-MnS are studied in the temperature range 80-300 K along two directions [100] and [111]. Strong anisotropy of the resistivity, and the shift of absorbtion spectra band edge below T < 160 K are explained in terms of model involving delocalized holes in 3d-band manganese ions interacting with localized spins by using the sd-model. (C) 2003 Elsevier Ltd. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Kiselev, N. I.; Romanova, O. B.; Романова, Оксана Борисовна


    Reconnection rate for the inhomogeneous resistivity Petschek model
/ N. V. Erkaev, V. S. Semenov, F. . Jamitzky // Phys. Rev. Lett. - 2000. - Vol. 84, Is. 7. - P. 1455-1458, DOI 10.1103/PhysRevLett.84.1455. - Cited References: 16 . - ISSN 0031-9007
РУБ Physics, Multidisciplinary

Аннотация: The reconnection rate for the canonical simplest case of steady-state two-dimensional symmetric reconnection in an incompressible plasma is found by matching of an outer Petschek solution and an internal diffusion region solution. The reconnection rate obtained naturally incorporates both Sweet-Parker and Petschek regimes; while the latter is possible only for a strongly localized resistivity.

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Держатели документа:
Russian Acad Sci, Inst Computat Modelling, Krasnoyarsk 660036, Russia
St Petersburg State Univ, Inst Phys, St Petersburg 198904, Russia
Max Planck Inst Extraterr Phys, D-85740 Garching, Germany
ИВМ СО РАН

Доп.точки доступа:
Semenov, V. S.; Jamitzky, F.; Еркаев, Николай Васильевич

    An impurity resistivity of doped manganese perovskites
/ V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526
РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance

Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович

    Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density
/ V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834
РУБ Physics, Condensed Matter

Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович

    Static and dynamic characteristics of the bulk and contact electric resistivity in CDCR2SE4 under stochastic current instability
/ N. A. Drokin, S. M. Ganiev // Fiz. Tverd. Tela. - 1992. - Vol. 34, Is. 7. - P. 2122-2128. - Cited References: 21 . - ISSN 0367-3294
РУБ Physics, Condensed Matter


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Ganiev, S. M.; Дрокин, Николай Александрович

    Study of electroconductivity in cobalt nanocrystalline films
/ G. I. Frolov [и др.] // Fiz. Tverd. Tela. - 1996. - Vol. 38, Is. 4. - P. 1208-1213. - Cited References: 13 . - ISSN 0367-3294
РУБ Physics, Condensed Matter


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Доп.точки доступа:
Frolov, G. I.; Zhigalov, V. S.; Polskii, A. I.; Pozdnyakov, V. G.