Рубрики:
SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON IMPURITY
ROOM-TEMPERATURE
TUNNEL-JUNCTIONS
EVEN NUMBER
MODEL
MAGNETORESISTANCE
OSCILLATIONS
CONDUCTANCE
SINGLE-ELECTRON TRANSISTOR
COULOMB-BLOCKADE
ANDERSON IMPURITY
ROOM-TEMPERATURE
TUNNEL-JUNCTIONS
EVEN NUMBER
MODEL
MAGNETORESISTANCE
OSCILLATIONS
CONDUCTANCE
Аннотация: By means of a diagram technique for Hubbard operators, we show the existence of a spin-dependent renormalization of the localized levels in an interacting region, e.g., quantum dot, modeled by the Anderson Hamiltonian with two conduction bands. It is shown that the renormalization of the levels with a given spin direction is due to kinematic interactions with the conduction subbands of the opposite spin. The consequence of this dressing of the localized levels is a drastically decreased tunneling current for ferromagnetically ordered leads compared to that of paramagnetically ordered leads. Furthermore, the studied system shows a spin-dependent resonant tunneling behavior for ferromagnetically ordered leads.
WOS,
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Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Доп.точки доступа:
Eriksson, O.; Sandalov, I.