Рубрики:
EPITAXIAL-GROWTH
LOW-TEMPERATURE
FeSi2
NANOWIRES
Si(111)
FILMS
Si
Кл.слова (ненормированные):
Nanomaterials -- Molecular beam epitaxy -- α-FeSi2 -- Electrode
EPITAXIAL-GROWTH
LOW-TEMPERATURE
FeSi2
NANOWIRES
Si(111)
FILMS
Si
Кл.слова (ненормированные):
Nanomaterials -- Molecular beam epitaxy -- α-FeSi2 -- Electrode
Аннотация: Self-organized α-FeSi2 nanocrystals on (100) silicon substrate were synthesized by molecular beam epitaxy with Au catalyst. The microstructure and basic orientation relationship between the silicide nanocrystals and silicon substrate were analyzed in detail. α-FeSi2 nanocrystals appeared to be inclined trapezoid and rectangular nanoplates, polyhedral nanobars and pyramid-like ones, aligned along 011 directions on (100) silicon substrate with the length up to 1.5 μm, width ranging between 80 and 500 nm and thickness from 30 to 170 nm. As has been proposed metallic iron silicide may be used for manufacturing electric contacts on silicon. A current-voltage characteristic of the structure was measured at room temperature and showed good linearity.
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Держатели документа:
Siberian State Aerospace University, 31 Krasnoyarsky Rabochiy Av., Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Akademgorodok 50, bld. 38, Krasnoyarsk, Russian Federation
Far Eastern State Transport University, Serysheva str. 47, Khabarovsk, Russian Federation
Krasnoyarsk Scientific Centre, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation
Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Nemtsev, I. V.; Немцев, Иван Васильевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич