Аннотация: We report the large magnetoimpedance effect in a hybrid Fe/SiO2/p-Si structure with the Schottky barrier. The pronounced effect of magnetic field on the real and imaginary parts of the impedance has been found at temperatures 25-100K in two relatively narrow frequency ranges around 1 kHz and 100MHz. The observed frequency-dependent magnetotransport effect is related to the presence of localized "magnetic" states near the SiO2/p-Si interface. In these states, two different recharging processes with different relaxation times are implemented. One process is capture-emission of carriers that involves the interface levels and the valence band; the other is the electron tunneling between the ferromagnetic electrode and the interface states through SiO2 potential barrier. In the first case, the applied magnetic field shifts energy levels of the surface states relative to the valence band, which changes recharging characteristic times. In the second case, the magnetic field governs the spin-dependent tunneling of carriers through the potential barrier. The "magnetic" interface states originate, most likely, from the formation of the centers that contain Fe ions, which can easily diffuse through the SiO2 layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769788]
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Держатели документа:
[Volkov, N. V.
Tarasov, A. S.
Eremin, E. V.
Eremin, A. V.
Varnakov, S. N.
Ovchinnikov, S. G.] Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Eremin, E. V.
Varnakov, S. N.] Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Eremin, A. V.; Ерёмин, Александр Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич