Перевод заглавия: Переход металл-полупроводник в твердых растворах SmxMn1−xS
Рубрики:
Magnetic-properties
Phase-transition
SmS
Valence
Pressure
Crystal
Lattice
CeRhSb
Кл.слова (ненормированные):
Kondo effect -- metal-semiconductor transition -- semiconductors -- variable-valence elements
Magnetic-properties
Phase-transition
SmS
Valence
Pressure
Crystal
Lattice
CeRhSb
Кл.слова (ненормированные):
Kondo effect -- metal-semiconductor transition -- semiconductors -- variable-valence elements
Аннотация: The electrical resistivity of the SmxMn1−xS (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility-edge movement, the disorder being due to elastic deformation and spin density fluctuations with short-range order. Metal–semiconductor phase transition versus concentration at xc = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm0.2Mn0.8S is found.
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Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Balaev, D. A.; Балаев, Дмитрий Александрович; Gorev, M. V.; Горев, Михаил Васильевич; Vorotynov, A. M.; Воротынов, Александр Михайлович; Sokolov, V. V.; Pichugin, A.