Труды сотрудников института физики

/ Б. А. Беляев [и др.] // Изв. вузов. Физика. - 2013. - Т. 56, № 8/2. - С. 230-232. - Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
   Перевод заглавия: Micromagnetic simulation and numerical analysis of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayer
Аннотация: На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.
On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange bias field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Изотов, Андрей Викторович; Izotov, A.V.; Беляев, Борис Афанасьевич; Belyaev, B. A.; Соловьев, Платон Николаевич; Волошин, Александр Сергеевич; Voloshin, A. S.

/ N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)

/ N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович

/ B. A. Belyaev, A. V. Zotov, P. N. Solovev // Int. Sib. Conf. on Control and Communicat. : Proc. - 2013. - Conference code: 102462. Cт. 6693573, DOI 10.1109/SIBCON.2013.6693573. - Cited References: 13 . - ISSN 978-1-479РУБ Engineering, Electrical & Electronic + Telecommunications

Аннотация: Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange bias field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.

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Доп.точки доступа:
Zotov, A. V.; Solovev, P. N.; Беляев, Борис Афанасьевич; International Siberian Conference on Control and Communications(10 ; 2013 ; Sept. 12-13 ; Krasnoyarsk)

/ N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2012. - Vol. 324, Is. 21. - P. 3579-3583, DOI 10.1016/j.jmmm.2012.02.095. - Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15). . - ISSN 0304-8853РУБ Physics, Condensed Matter + Materials Science, Multidisciplinary

Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)

/ A. V. Chzhan [et al.] // Solid State Phenomena : Selected, peer reviewed papers. - 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P. 463-465, DOI 10.4028/www.scientific.net/SSP.190.463. - Cited References: 5 . - ISSN 1662-9779. - ISSN 978-30378РУБ Materials Science, Multidisciplinary + Physics, Multidisciplinary

Аннотация: Exchange bias and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.

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Доп.точки доступа:
Perov, N. \ed.\; Rodionova, V. \ed.\; Chzhan, A. V.; Чжан, Анатолий Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kiparisov, S. Ya.; Кипарисов, Семен Яковлевич; Seredkin, V. A.; Середкин, Виталий Александрович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)

/ N. V. Volkov [et al.] // Appl. Phys. Lett. - 2014. - Vol. 104, Is. 22. - Ст. 222406, DOI 10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118РУБ Physics, Applied

Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]

/ P. D. Kim [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 489-494, DOI 10.4028/www.scientific.net/SSP.215.489. - Cited References: 17 . - ISSN 978-30383. - ISSN 1662-9779
Аннотация: Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.


Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Kim, P. D.; Ким, Пётр Дементьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич; Lee, L. A.; Ли, Людмила Алексеевна; Rudenko, T. V.; Руденко, Т. В.; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)

/ D. A. Balaev [et al.] // J. Exp. Theor. Phys. - 2014. - Vol. 119, Is. 3. - P. 479-487, DOI 10.1134/S1063776114080044. - Cited References: 42. - This work was supported by the Ministry of Education and Science of the Russian Federation (state contract in 2014-2016) and a program of the Siberian Branch of the Russian Academy of Sciences. . - ISSN 1063-7761. - ISSN 1090-6509РУБ Physics, Multidisciplinary

Аннотация: The magnetic properties of the superparamagnetic ferrihydrite nanoparticles that form as a result of the vital activity of Klebsiella oxytoca bacteria are studied. Both an initial powder with an average number of iron atoms N Fe ∼ 2000–2500 in a particle and this powder after annealing at 140°C for 3 h in air are investigated. The following substantial modifications of the magnetic properties of the ferrihydrite nanoparticles are detected after annealing: the superparamagnetic blocking temperature increases from 23 to 49.5 K, and the average magnetic moment of a particle increases (as follows from the results of processing of magnetization curves). The particles have antiferromagnetic ordering, and the magnetic moment resulting in the superparamagnetism of the system appears due to random spin decompensation inside the particle. For this mechanism, the number of uncompensated spins is proportional to the number of magnetically active atoms raised to the one-half power, and this relation holds true for the samples under study at a good accuracy. The possible causes of the detected shift of magnetic hysteresis loops at low temperatures upon field cooling are discussed.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirenskii Inst Phys, Krasnoyarsk 660041, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, Int Sci Ctr Extreme States Organisms, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Krasikov, A. A.; Красиков, Александр Александрович; Dubrovskii, A. A.; Дубровский, Андрей Александрович; Semenov, S. V.; Семёнов, Сергей Васильевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Stolyar, S. V.; Столяр, Сергей Викторович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Ladygina, V. P.; Ладыгина, Валентина Петровна; Ishchenko, L. A.; Ищенко, Л. А.; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences

/ S. I. Burkov [et al.] // Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст. 5935458. - P. 1853-1856, DOI 10.1109/ULTSYM.2010.5935458 . - ISBN 1051. - ISBN 9781457703829
Аннотация: Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.

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Доп.точки доступа:
Burkov, S. I.; Zolotova, O. P.; Turchin, P. P.; Sorokin, B. P.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2010 ; Oct. ; 11-14 ; San Diego, CA)

/ S. I. Burkov [et al.] // Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст. 4803254. - P. 2161-2164, DOI 10.1109/ULTSYM.2008.0535 . - ISBN 1051-0117
Аннотация: Main theory results concerned with bulk elastic wave reflection/refraction on the boundary between two piezoelectric crystals subjected to the action of bias electric field or mechanical stress have presented. Some calculations for LiNbO3 and Bi12GeO20 crystals have made. В©2008 IEEE.

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Доп.точки доступа:
Burkov, S. I.; Sorokin, B. P.; Karpovich, A. A.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2008 ; Nov. ; 2-5 ; Beijing, China)

/ K. S. Aleksandrov [и др.] // Izv RAN Ser Fiz. - 1996. - Vol. 60, Is. 10. - P. 103-105 . - ISSN 0367-6765

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Доп.точки доступа:
Aleksandrov, K. S.; Turchin, P. P.; Sorokin, B. P.; Burkov, S. I.

/ I. S. Edelman [et al.] // J. Alloys Compd. - 2015. - Vol. 624. - P. 60-67, DOI 10.1016/j.jallcom.2014.11.059. - Cited References: 25. - This work was supported partly by the Russian Foundation for Basic Research - Russia, Grant No. 14-02-01211-a and by the President of Russia Grant No. NSh-2886.2014.2. This work was performed using the equipment of Unique Scientific Facility "Kurchatov Synchrotron Radiation Source'' supported by the Russian Ministry of Science and Education (project code RFMEFI61914X0002). . - ISSN 0925-8388РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering

Аннотация: A new type of nanocomposite materials based on maghemite, γ-Fe2O3, nanoparticles dispersed in borate glasses co-doped with low contents of iron together with the larger radius element combinations: Y and Bi, or Sm and Pb, or Y and Pb is studied. Nanoparticles arise as a result of heat treatment of the glasses which gives them properties characteristic of magnetically ordered substances. Transmission electron microscopy and XRD show that only one magnetic phase, namely γ-Fe2O3 nanoparticles, occurs in glasses subjected to the thermal treatment at 540 °C during 24 h independently on the doping element nature. At the same time doping element and their concentrations ratio in every combination affect the particles average size and glass magnetic properties, such as magnetization temperature dependences, Faraday rotation value and electron magnetic resonance spectrum characteristics.

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Держатели документа:
RAS, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660036, Russia
NRC Kurchatov Inst, Moscow 123182, Russia
RAS, Siberian Branch, Boreskov Inst Catalysis, Novosibirsk 630090, Russia
Novosibirsk State Univ, Novosibirsk 630090, Russia

Доп.точки доступа:
Edelman, I. S.; Эдельман, Ирина Самсоновна; Ivanova, O. S.; Иванова, Оксана Станиславовна; Petrakovskaja, E. A.; Петраковская, Элеонора Анатольевна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Zubavichus, Y. V.; Trofimova, N. N.; Zaikovskii, V. I.; Russian Foundation for Basic Research - Russia [14-02-01211-a]; President of Russia [NSh-2886.2014.2]; Russian Ministry of Science and Education [RFMEFI61914X0002]

/ N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2015. - Vol. 383. - P. 69-72, DOI 10.1016/j.jmmm.2014.11.014. - Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043. . - ISSN 0304-8853
   Перевод заглавия: Контролируемые напряжением смещения магнитотранспортные явления, наблюдаемые на постоянном и переменном токе в гибридных структурахРУБ Materials Science, Multidisciplinary + Physics, Condensed Matter

Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Ministry of Education and Science of the Russian Federation [02.G25.31.0043]; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)

/ N. V. Volkov [et al.] // Moscow Int. Symp. on Magnet. (MISM-2014) : 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст. 1RP-A-10. - P. 315 . - ISBN 978-5-91978-025-0

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)

/ D. A. Smolyakov, A. O. Gustaitsev, N. V. Volkov // Moscow Int. Symp. on Magnet. (MISM-2014) : Book of abstracts. - 2014. - Ст. 1PO-K-8. - P. 541 . - ISBN 978-5-91978-025-0

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Доп.точки доступа:
Gustaitsev, A. O.; Густайцев Артур Олегович; Volkov, N. V.; Волков, Никита Валентинович; Смоляков, Дмитрий Александрович; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)

/ N. V. Volkov [et al.] // Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 36. - Библиогр.: 4 назв.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАН; Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир, центр межрегионального инновационного развития

/ N. V. Volkov [et al.] // J. Surf. Invest. - 2015. - Vol. 9, Is. 5. - P. 984-994, DOI 10.1134/S1027451015050432. - Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043. . - ISSN 1027-4510
   Перевод заглавия: Оптически индуцированный и управляемый напряжением магниторезистивный эффект в устройстве на основе кремнияРУБ Surfaces and Interfaces, Thin Films

Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian branch, Krasnoyarsk, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Institute of Space Technology, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич

/ D. A. Smolyakov [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 451-455, DOI 10.4028/www.scientific.net/SSP.233-234.451 . - ISSN 1662-9779. - ISSN 978-3-038
   Перевод заглавия: Контролируемый напряжением смещения эффект магнитоимпеданса в МДП структуре
Аннотация: We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field. © (2015) Trans Tech Publications, Switzerland.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Gustaitsev, A. O.; Volkov, N. V.; Волков, Никита Валентинович; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)

/ A. O. Gustaitsev [et al.] // Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 111. - This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043

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Доп.точки доступа:
Gustaitsev, A. O.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; Jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАН; Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир", центр межрегионального инновационного развития