/ V. Y. Davydov [et al.]> // Semiconductors. - 2010. -
Vol. 44,
Is. 2. - P. 161-170,
DOI 10.1134/S1063782610020065. - Cited References: 19. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-01280 and 08-02-92003-NNS) and by the program of the Russian Academy of Sciences "New Materials and Structures."
. - ISSN 1063-7826
РУБ Physics, Condensed Matter
Аннотация: It is shown that a study of the dependence of impurity-related resonant first-order Raman scattering on the frequency of excitation light makes it possible to observe the dispersion of polar optical and acoustic branches of vibrational spectrum in hexagonal InN within a wide range of wave vectors. It is established that the wave vectors of excited
phonons are uniquely related to the energy of excitation photon. Frequencies of longitudinal optical
phonons E(1)(LO) and A(1)(LO) in hexagonal InN were measured in the range of excitation-photon energies from 2.81 to 1.17 eV and the frequencies of longitudinal acoustic
phonons were measured in the range 2.81-1.83 eV of excitation-photon energies. The obtained dependences made it possible to extrapolate the dispersion of
phonons A(1)(LO) and E(1)(LO) to as far as the point Gamma in the Brillouin zone and estimate the center-band energies of these
phonons (these energies have not been uniquely determined so far).
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Держатели документа: [Davydov, V. Yu.
Klochikhin, A. A.
Smirnov, A. N.
Strashkova, I. Yu.] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[Klochikhin, A. A.] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, St Petersburg 350000, Russia
[Krylov, A. S.] Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Lu, Hai
Schaff, William J.] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
[Lee, H-M.
Hong, Y. -L.
Gwo, S.] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan
ИФ СО РАН
Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation
Konstantinov Nuclear Physics Institute, Russian Academy of Sciences, St. Petersburg 350000, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, United States
Department of Physics, National Tsing-Hua University, Taiwan, China
Доп.точки доступа: Davydov, V. Yu.; Klochikhin, A. A.; Smirnov, A. N.; Strashkova, I. Y.; Krylov, A. S.; Крылов, Александр Сергеевич; Lu, H.; Schaff, W. J.; Lee, H. M.; Hong, Y. L.; Gwo, S.