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    Solid-state synthesis, structural and magnetic properties of CoPd films
/ V. G. Myagkov [et al.] // Phys. Solid State. - 2015. - Vol. 57, Is. 5. - P. 1014-1022, DOI 10.1134/S1063783415050236. - Cited References:57. - This study was supported in part by the Russian Foundation for Basic Research (project no. 15-02-00948). . - ISSN 1063. - ISSN 1090-6460. -
РУБ Physics, Condensed Matter

Аннотация: The results of the investigation of the structural and magnetic properties of CoPd films with equiatomic composition have been presented. The films have been synthesized by vacuum annealing of polycrystalline Pd/Co and epitaxial Pd/α-Co(110) and Pd/β-Co(001) bilayer samples. It has been shown that, for all samples, the annealing to 400°C does not lead to the mixing of layers and the formation of compounds. A further increase in the annealing temperature results in the formation of a disordered CoPd phase at the Pd/Co interface, which is fully completed after annealing at 650°C. The epitaxial relationships between the disordered CoPd phase and the MgO(001) substrate are determined as follows: CoPd(110)〈1¯11|| MgO(001)〈100〉 and CoPd(001)[100] || MgO(001)[100], which are formed in the Pd/αCo(110) and Pd/βCo(001) films, respectively. According to the calculations, the first magnetocrystalline anisotropy constants of the disordered CoPd phase for Pd/αCo(110) and Pd/βCo(001) samples have close values: = –(1.6 ± 0.4) × 105 erg/cm3. A possible mechanism of the solidstate synthesis of the CoPd alloy is proposed.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Matsynin, A. A.; Мацынин, Алексей Александрович; Rybakova, A. N.; Russian Foundation for Basic Research [15-02-00948]