Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a typical voltage signal due to the rectification effect. We performed measurements in current-in-plane geometry when a current flows parallel to the interfaces in the structure. The value of the microwave-induced voltage strongly depends on the bias current and can be driven by a magnetic field. The rectification effect is discussed both in classical terms of nonlinearity of the current-voltage characteristics and within the mechanism involving the interplay between the spin-polarized current and the magnetization dynamics in the magnetic tunnel structure.
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Держатели документа:
[Volkov, N. V.
Rautskiy, M. V.
Eremin, E. V.
Patrin, G. S.
Kim, P. D.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Eremin, E. V.] Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Patrin, G. S.] Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
[Lee, C. G.] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Петр Дементьевич; Lee, C. G.