Аннотация: We present detailed simulations addressing recent electronic interference experiments,where a metallic gate is used to locally modify the Fermi wavelength of the charge carriers. Our numerical calculations are based on a solution of the one-particle Schrodinger equation for a realistic model of the actual sample geometry, including a Poison equation-based determination of the potential due to the gate. The conductance is determined with the multiprobe Landauer-Buttiker formula, and in general we find conductance vs gate voltage characteristics, which closely resemble the experimental traces. A detailed examination based on quantum-mechanical streamlines suggests that the simple one-dimensional semiclassical model often used to describe the experiments has only a limited range of validity, and that certain ''unexpected" periodicities should not be assigned any particular significance, they arise due to the complicated multiple scattering processes occurring in certain sample geometries.
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Держатели документа:
Tech Univ Denmark, Mikroelekt Ctr, DK-2800 Lyngby, Denmark
LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Acad Sci Czech Republ, Inst Phys, CR-16200 Prague, Czech Republic
Abo Akad Univ, Dept Phys, SF-20500 Turku, Finland
ИФ СО РАН
Доп.точки доступа:
Pichugin, K. N.; Пичугин, Константин Николаевич; Sadreev, A. F.; Садреев, Алмаз Фаттахович