Кл.слова (ненормированные):
Fano parameters -- Local variations -- Longitudinal variations -- Nanocrystallite size -- Quantum confinement effects -- Quantum size effects -- Raman line shapes -- Raman spectromicroscopy -- Electron-phonon interactions
Аннотация: Quantum size effects on interferons (electron-phonon bound states), confined in fractal silicon (Si) nanostructures (NSs), have been studied by using Raman spectromicroscopy. A paradoxical size dependence of Fano parameters, estimated from Raman spectra, has been observed as a consequence of longitudinal variation of nanocrystallite size along the Si wires leading to local variations in the dopants' density which actually starts governing the Fano coupling, thus liberating the interferons to exhibit the typical quantum size effect. These interferons are more dominated by the effective reduction in dopants' density rather than the quantum confinement effect. Detailed experimental and theoretical Raman line shape analyses have been performed to solve the paradox by establishing that the increasing size effect actually is accompanied by receding Fano coupling due to the weakened electronic continuum. The latter has been validated by observing a consequent variation in the Raman signal from dopants which was found to be consistent with the above conclusion.
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Держатели документа:
Materials and Device Laboratory, Discipline of Physics, Indian Institute of Technology Indore, Simrol, 453552, India
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institut fur Festkorperphysik, Leibniz Universitat Hannover, Appelstr. 2, Hannover, D-30167, Germany
Department of Materials Science and Engineering, Ajou University, Suwon, 16499, South Korea
Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, South Korea
Centre for Advanced Electronics, Indian Institute of Technology Indore, Simrol, 453552, India
Доп.точки доступа:
Tanwar, M.; Pathak, D. K.; Chaudhary, A.; Krylov, A. S.; Крылов, Александр Сергеевич; Pfnur, H.; Sharma, A.; Ahn, B.; Lee, S.; Kumar, R.