Перевод заглавия: Фазовый переход в Ca3(PO4)2:Eu2+ посредством контролируемой закалки и увеличения концентрации Eu2+: Идентификация нового голубого люминофора α-Ca3(PO4)2:Eu2+
Рубрики:
NEUTRON POWDER DIFFRACTION
SOLID-SOLUTION PHOSPHORS
CRYSTAL-STRUCTURE
DIODES
PHOTOLUMINESCENCE
LUMINESCENCE
TRANSITION
ALPHA
NEUTRON POWDER DIFFRACTION
SOLID-SOLUTION PHOSPHORS
CRYSTAL-STRUCTURE
DIODES
PHOTOLUMINESCENCE
LUMINESCENCE
TRANSITION
ALPHA
Аннотация: A case of phosphor is reported where the cooling rate parameter significantly influences the luminescence property. By quenching the sample after the higherature solid-state reaction at 1250°C, we successfully prepared the Eu2+-doped α form Ca3(PO4)2 (α-TCP:Eu2+) as a new kind of bright cyan-emitting phosphor. The unusual emission color variation (from cyan to blue) depends on the cooling rate after sintering and Eu2+ doping level as it was observed in the TCP-based phosphors. By the Rietveld analysis, it is revealed that the cyan- and blue-emitting phosphors are two different TCP forms crystallizing in the monoclinic (space group P21/a, α-TCP) and the rhombohedral structure (space group R3c, β-TCP), respectively. Upon 365 nm UV light excitation, α-TCP:Eu2+ exhibits an asymmetric broad-band cyan emission peaking at 480 nm, while β-TCP:Eu2+ displays a relatively narrow-band blue emission peaking at 416 nm. The Eu2+-doping in Ca3(PO4)2 shifts the upper temperature limit of the stable structural range of β form from 1125°C to ≥1250°C. Moreover, the crystal structures of α/β-TCP:Eu2+ were compared in the aspects of compactness and cation site sets. The emission thermal stability of α/β-TCP:Eu2+ was comparatively characterized and the difference was related to the specific host structural features. © 2015 The American Ceramic Society.
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Держатели документа:
School of Materials Science and Technology, Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, China University of Geosciences, Beijing, China
School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, SB RAS, Krasnoyarsk, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, Russian Federation
Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russian Federation
Functional Electronics Laboratory, Tomsk State University, Tomsk, Russian Federation
Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University, Novosibirsk, Russian Federation
Доп.точки доступа:
Ji, H.; Huang, Z.; Xia, Zhiguo; Molokeev, M. S.; Молокеев, Максим Сергеевич; Chen, M.; Atuchin, V. V.; Fang, M.; Liu, Y.; Wu, Xiaowen