Труды сотрудников института физики

/ D. A. Balaev [et al.] // Phys. Solid State. - 2012. - Vol. 54, Is. 11. - P. 2155-2164, DOI 10.1134/S1063783412110030. - Cited References: 52. - This study was supported by the Russian Foundation for Basic Research within the framework of the Regional Competition SIBERIA (project no. 11-02-98007 r-sibir'_a). . - ISSN 1063-7834РУБ Physics, Condensed Matter

Аннотация: The behavior of the hysteresis of the magnetoresistance R(H) of granular high-temperature superconductors has been investigated under the conditions where the resistive response of the subsystem of grain boundaries close to saturation. The hysteretic dependences R(H) have been measured for Y1-xPrxBa2Cu3O7 samples at x = 0.11 and 0.04 with the transition temperatures T-C approximate to 85.5 and 91.0 K, respectively. The evolution of the field width of the hysteresis R(H) has been examined by varying the measuring current. The limit of the applicability has been established for the concept of the effective field in the intergranular medium, which was previously proposed for the description of the hysteretic behavior of the magnetoresistance R(H) and thermal magnetic prehistory of the granular high-temperature superconductors. In the studied samples, the approximation of the effective field in the intergranular medium is applicable until the magnetoresistance of the subsystem of grain boundaries exceeds (90 +/- 5)% of the maximum value.

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Держатели документа:
[Balaev, D. A.
Dubrovskii, A. A.
Popkov, S. I.
Gokhfeld, D. M.
Semenov, S. V.
Shaykhutdinov, K. A.
Petrov, M. I.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Dubrovskii, A. A.; Дубровский, Андрей Александрович; Popkov, S. I.; Попков, Сергей Иванович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Semenov, S. V.; Семёнов, Сергей Васильевич; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович

/ A. A. Bykov [et al.] // Tech. Phys. Lett. - 2012. - Vol. 38, Is. 12. - P. 1080-1082, DOI 10.1134/S1063785012120036. - Cited References: 8 . - ISSN 1063-7850РУБ Physics, Applied

Аннотация: The magnetoresistance (MR) of substituted lanthanum manganite (La0.5Eu0.5)(0.7)Pb0.3MnO3 has been measured in a pulsed magnetic field with amplitude H = 250 kOe at various temperatures. It is established that temperature dependence of the MR relaxation parameter tau(T) is correlated with temperature dependence of the electric resistance R(T). A mechanism of relaxation is proposed that is related to the relaxation of conducting and dielectric phases in the volume of a sample under the conditions of phase separation. It is shown that the behavior of tau is related to the number of phase boundaries in the volume.

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Держатели документа:
[Bykov, A. A.
Popkov, S. I.
Shaykhutdinov, K. A.
Sablina, K. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Bykov, A. A.; Быков, Алексей Анатольевич; Popkov, S. I.; Попков, Сергей Иванович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Sablina, K. A.; Саблина, Клара Александровна

/ Y. Mita [et al.] // J. Korean Phys. Soc. - 2013. - Vol. 63, Is. 3. - P. 325-328, DOI 10.3938/jkps.63.325 . - ISSN 0374-4884
Аннотация: A pressure-induced phase transition in the colossal magnetoresistance (CMR) material Fe0.18Mn0.82S was studied by using infrared (IR) reflection and X-ray diffraction (XRD) at pressures up to 40 GPa at room temperature. XRD shows that the crystal structure of this sample is a NaCl-type structure at ambient pressure, that a structural change starts around 17 GPa, and that a mixed phase mixed between the NaCl-type low-pressure phase and an unknown structure high pressure phase continues up to around 25 GPa. On the other hand, the IR reflectivity increases with increasing pressure from 15 GPa and becomes remarkably high around 20 GPa. The spectra do not show any changes from 30 GPa. From these results, we conclude that the phase transition of Fe0.18Mn0.82S at room temperature starts around 15 GPa and is completed around 30 GPa and that the high-pressure phase is not a band-overlapping semimetal but a true metal. В© 2013 The Korean Physical Society.

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Держатели документа:
Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
Osaka Univ, Ctr Quantum Sci & Technol Extreme Condit, Osaka 5608531, Japan
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
AV Nikolaev Inst Inorgan Chem, Krasnoyarsk 630090, Russia

Доп.точки доступа:
Mita, Y.; Kagayama, T.; Abramova, G. M.; Абрамова, Галина Михайловна; Petrakovskii, G. A.; Петраковский, Герман Антонович; Sokolov, V.V.

[Текст] / S. I. Popkov [и др.] // V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism : abstracts. - Vladivostok : FEFU, 2013. - P275 . - ISBN 978-5-7444-3124-2


Доп.точки доступа:
Popkov, S. I.; Попков, Сергей Иванович; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Sablina, K. A.; Саблина, Клара Александровна; Bykov, A. A.; Быков, Алексей Анатольевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; Sept. ; 15-21 ; Vladivostok)

[Текст] / S. E. Nikitin [и др.] // V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism : abstracts. - Vladivostok : FEFU, 2013. - P284 . - ISBN 978-5-7444-3124-2


Доп.точки доступа:
Nikitin, S. E.; Никитин, С.Е.; Krasikov, A. A.; Красиков, Александр Александрович; Bykov, A. A.; Быков, Алексей Анатольевич; Terent'yev, K. Yu.; Терентьев, Константин Юрьевич; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Popkov, S. I.; Попков, Сергей Иванович; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; Sept. ; 15-21 ; Vladivostok)

[Текст] / N. V. Volkov [и др.] // V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism : abstracts. - Vladivostok : FEFU, 2013. - P322 . - ISBN 978-5-7444-3124-2


Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; Sept. ; 15-21 ; Vladivostok)

/ N. V. Volkov [et al.] // J. Appl. Phys. - 2013. - Vol. 114, Is. 9. - Ст. 093903. - P. , DOI 10.1063/1.4819975. - Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 43, 85 and 102; Project of the Russian Ministry of Education and Science N 02.G25.31.0043. . - ISSN 0021-8979РУБ Physics, Applied

Аннотация: We report giant magnetoresistance (MR) effect that appears under the influence of optical radiation in common planar device built on Fe/SiO2/p-Si hybrid structure. Our device is made of two Schottky diodes connected to each other by the silicon substrate. Photo-induced MR is positive and the MR ratio reaches the values in excess of 10(4)%. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. To explain such unexpected behavior of the MR, one needs to take into account contribution of several physical mechanisms. The main contribution comes from the existence of localized interface states at the SiO2/p-Si interface, which provide the spots for the photo-current conduction by virtue of the sequential tunneling through them or thermal generation and optical excitation of mobile charges. External magnetic field changes the probability of these processes due to its effect on the energy states of the conduction centers. Two possible mechanisms that may be responsible for the observed dependence of magneto-resistance on the field polarity are discussed: the effect of the Lorentz force on moving carriers and spin splitting of electrons moving in the electrostatic potential gradient (Rashba effect). The most significant observation, in our opinion, is that the observed MR effect is seen exclusively in the subsystem of minority carriers transferred into non-equilibrium state by optical excitation. We suggest that building such magneto-sensitive devices based on this mechanism may set a stage for new types of spintronic devices to emerge. (C) 2013 AIP Publishing LLC.

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Держатели документа:
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Inst Space Technol, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Baron, F. A.; Барон, Филипп Алексеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [11-02-00367-a]; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures [20.8]; Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; Russian Ministry of Education and Science [N 02.G25.31.0043]

/ N. V. Volkov [et al.] // Joint Eur. Conf. on Magnetism : Book of abstracts. - 2013. - P. 55

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Joint European Conference on Magnetism (2013 ; August ; 25-30 ; Rhodes, Greece)

/ В. В. Вальков, А. Д. Федосеев // Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389DOI 10.7868/S0367676513030381 . -
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Федосеев, Александр Дмитриевич; Fedoseev, A. D.; Val'kov, V. V.

/ V. V. Val'Kov, A. D. Fedoseev // Bull. Russ. Acad. Sci.: Phys. - 2013. - Vol. 77, Is. 3. - P. 349-351, DOI 10.3103/S1062873813030386 . - ISSN 1062-8738
Аннотация: The energy spectrum of mobile charge carriers in a two-dimensional Antiferromagnet placed in external magnetic field is analyzed. It is shown that allowing for the magnetic sublattice skew the effective mass of mobile charge carriers in a lightly doped Antiferromagnet. This affects substantially the transport and thermodynamic properties of the system. A insulator-semimetal transition is induced with external magnetic field. В© 2013 Allerton Press, Inc.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Fedoseev, A. D.; Федосеев, Александр Дмитриевич; Вальков, Валерий Владимирович

/ K. G. Patrin [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 439-442, DOI 10.4028/www.scientific.net/SSP.190.439 . - ISBN 1012-0394. - ISBN 9783037854365
Аннотация: Interlayer interactions in FeNi/Bi/FeNi trilayers have been experimentally studied. Based on the data of SQUID magnetometry and magnetic resonance investigations, it is shown that the interlayer interaction is determined by a bismuth spacer thickness and temperature. The giant magnetoresistive effect in the trilayer films has been discovered. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Patrin, K. G.; Патрин, Константин Геннадьевич; Yakovchuk, V.Yu.; Яковчук, Виктор Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Yarikov, S. A.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)

/ N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович

/ G. S. Patrin [и др.] // Bull. Russ. Acad. Sci.: Phys. - 2012. - Vol. 76, Is. 2. - P. 177-179. - Cited References: 5. - This study was supported by the Russian Foundation for Basic Research, project no. 110200675a. . - ISSN 1062-8738
Аннотация: Interlayer interactions in FeNi/Bi/FeNi films are studied experimentally. It is established by SQUID magnetometry and magnetic resonance investigations that the interlayer interaction in these films is determined by the bismuth spacer thickness and temperature. A giant magnetoresistance effect is observed in the investigated trilayers. © 2012 Allerton Press, Inc.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Yakovchuk, V.Yu.; Яковчук, Виктор Юрьевич; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Patrin, K. G.; Патрин, Константин Геннадьевич; Yarikov, S. A.; Яриков, Станислав Алексеевич

/ L. Badía-Romano [et al.] // J. Magn. Magn. Mater. - 2014. - Vol. 364. - P. 24-33, DOI 10.1016/j.jmmm.2014.04.029. - Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza. . - ISSN 0304-8853. - ISSN 1873-4766РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter

Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5
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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, Inst Nanociencia Aragon, Lab Microscopias Avanzadas, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Univ Porto, Fac Ciencias, Dept Fis Astron, IN IFIMUP, P-4169007 Oporto, Portugal
Univ Oviedo, Dept Fis, E-33007 Oviedo, Spain
Univ Oviedo Principado Asturias, CSIC, CINN, E-33007 Oviedo, Spain
Forschungszentrum Julich, Elect Properties, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Aerospace Univ, Krasnoyarsk 660014, Russia
Siberian Fed Univ, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Badía-Romano, L.; Rubín, J.; Magén, C.; Bartolomé, F.; Sesé, J.; Ibarra, M.R.; Bartolomé, J.; Hierro-Rodriguez, A.; Martín, J.I.; Alameda, J.M.; Bürgler, D.E.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич

/ N. V. Volkov // Phys. Usp. - 2012. - Vol. 55, Is. 3. - P. 250-269, DOI 10.3367/UFNe.0182.201203b.0263. - Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15). . - ISSN 1063-7869РУБ Physics, Multidisciplinary

Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.

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Доп.точки доступа:
Волков, Никита Валентинович

/ D. A. Balaev, S. V. Semenov, M. I. Petrov // J. Supercond. Nov. Magn. - 2014. - Vol. 27, Is. 6. - P. 1425-1429, DOI 10.1007/s10948-014-2491-6. - Cited References: 27 . - ISSN 1557-1939. - ISSN 1557-1947РУБ Physics, Applied + Physics, Condensed Matter

Аннотация: The correlation between experimental magnetic field dependences of magnetoresistance and magnetization hysteresis in granular YBa2Cu3O7 is established. Within the proposed approach, magnetoresistance is assumed to be determined by the effective field in the intergrain boundaries the ensemble of which is considered to be a Josephson medium. The effective field in the intergrain medium can be written in the form B (eff)(H)=H-4 pi M(H)x alpha, where alpha is the parameter of averaged demagnetizing factors of grains and the degree of flux compression. A comparison of experimental magnetoresistance R(H) and magnetization M(H) hysteresis dependences obtained at different external magnetic field sweep rates yields the value alpha similar to 10, which is caused by the flux compression between grains. The proposed model describes well most of the features of the magnetoresistance hysteresis in granular high-T (C) superconductors.

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Доп.точки доступа:
Semenov, S. V.; Семёнов, Сергей Васильевич; Petrov, M. I.; Петров, Михаил Иванович; Балаев, Дмитрий Александрович

/ L. V. Udod [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 7. - P. 1315-1319, DOI 10.1134/S1063783414070336. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, and 14-12-00124). . - ISSN 1063-7834. - ISSN 1090-6460РУБ Physics, Condensed Matter

Аннотация: The Bi2Sn2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic, has been synthesized for the first time by solid-phase synthesis. The dielectric and electrical properties of the compound have been studied in the temperature range 100 K ˂ T ˂ 500 K. Anomalies in the temperature dependences of the electrical resistivity and the permittivity (imaginary and real parts) have been found at both low and high temperatures. These features are explained in terms of the model of martensitic phase transitions.

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Держатели документа:
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Russian Foundation for Basic Research [09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, 14-12-00124]

/ G. S. Patrin [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 348-351, DOI 10.4028/www.scientific.net/SSP.215.348. - Cited References: 8 . - ISSN 978-30383. - ISSN 1662-9779
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.


Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, K. G.; Патрин, Константин Геннадьевич; Alekseichik, E. A.; Алексейчик, Е. А.; Kobyakov, A. V.; Кобяков, Александр Васильевич; Yushkov, V. I.; Юшков, Василий Иванович; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)

[Текст] / N. V. Volkov [et al.] // Trans. Nonferrous Met. Soci. China. - 2014. - Vol. 24, Is. 10. - P. 3158–3163DOI 10.1016/S1003-6326(14)63455-5. - Cited References: 12. - This study was supported by the Presidium of the Russian Academy of Sciences (project No. 20.8); the Division of Physical Sciences of the Russian Academy of Sciences (project No. II.4.3); the Siberian Branch of the Russian Academy of Sciences (integration projects Nos. 43, 85 and 102); the RF Ministry for Education and Science (project No. 02.G25.31.0043); and the Russian Foundation of Basic Research (projects Nos. 14-02-00234, 14-02-31156). . -
Аннотация: The giant magnetoresistive (MR) effect was investigated in a simple Fe/SiO2/p-Si-hybrid-structure-based device from two back-to-back Schottky diodes. The effect was revealed only under the non-equilibrium conditions caused by optical radiation. It is demonstrated that the magnetoresistance ratio attains 100 or more. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. It is important that the magnetoresistive effect is implemented exclusively in the subsystem of minority charge carriers transferred to the non-equilibrium states. The development of magneto-sensitive devices of this type can give grounds for a novel direction of semiconductor spintronics.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Gustajcev, A. O.; Густайцев Артур Олегович; Volkova, O. N.; Волкова, О. Н.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Presidium of the Russian Academy of Sciences [20.8]; Division of Physical Sciences of the Russian Academy of Sciences [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; RF Ministry for Education and Science [02.G25.31.0043]; Russian Foundation of Basic Research [14-02-00234, 14-02-31156]

[Текст] / N. V. Volkov [и др.] // Adv. metals, ceramics and composites : 12th China-Russia Symposium on Advaced Materials and Technologies. - 2013. - Pt. 2. - P. 216-219 . - ISBN 978-7-5415-7650-5


Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Gustaitsev, A. O.; Густайцев Артур Олегович; Volkova, O. N.; Волкова, О. Н.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; China-Russia Symposium on Advaced Materials and Technologies (12 ; 2013 ; Nov. 18-22 ; Kunming, China)