Труды сотрудников института физики

/ S. S. Aplesnin [и др.] // Phys. Status Solidi B. - 2012. - Vol. 249, Is. 4. - P. 812-817, DOI 10.1002/pssb.201147327. - Cited References: 27. - This study was supported by the Russian Foundation for Basic Research project No 09-02-00554_a; No 09-02-92001-NNS_a; No 11-02-98018 r_sibir_a; ADTP "Development of scientific potential of the higher school" No. 2.1.1/11763. . - ISSN 0370-1972
   Перевод заглавия: Переход металл-полупроводник в твердых растворах SmxMn1−xSРУБ Physics + Condensed Matter

Аннотация: The electrical resistivity of the SmxMn1−xS (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility-edge movement, the disorder being due to elastic deformation and spin density fluctuations with short-range order. Metal–semiconductor phase transition versus concentration at xc = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm0.2Mn0.8S is found.

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Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Balaev, D. A.; Балаев, Дмитрий Александрович; Gorev, M. V.; Горев, Михаил Васильевич; Vorotynov, A. M.; Воротынов, Александр Михайлович; Sokolov, V. V.; Pichugin, A.

/ V. V. Slabko [et al.] // ICONO/LAT 2013 : Advance conference program. - 2013. - Ст. IWS8. - P. 67

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Доп.точки доступа:
Slabko, V. V.; Слабко, Виталий Васильевич; Slyusareva, E. A.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Tsipotan, A. S.; Glushkov, А. А.; International Conference on Coherent and Nonlinear Optics(2013 ; June ; 18-22 ; Moscow); International Conference on Lasers, Applications, and Technologies(2013 ; June ; 18-22 ; Moscow)

/ G. Makovetskii [et al.] // J. Korean Phys. Soc. - 2013. - Vol. 62, Is. 12. - P. 2059-2062, DOI 10.3938/jkps.62.2059. - Cited References: 9. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-92001-NNS_a; No.12-02-90004 Bel_a; No. 12-02-00125_a; No. 11-02-98018 r_sibir_a, F12R-060 . - ISSN 0374-4884РУБ Physics, Multidisciplinary

Аннотация: The new sulphide Mn1-X Ni (X) S (0 T (N) . The conductivity type change from the hole to the electronic at X > 0.05 is revealed on the basis of the thermoelectric power measurements. The resistivity and thermopower behaviors are explained in terms of the impurity subband formation into MnS electron excitation gap.

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Держатели документа:
Natl Acad Sci Belarus, GO NPTs Mat Sci Ctr, Minsk 220072, Byelarus
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Makovetskii, G.; Аплеснин, Сергей Степанович; Demidenko, O. F.; Galyas, A.; Yanushkevich, K.; Aplesnin, S. S.; Romanova, O. B.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна

/ V. A. Loiko [et al.] // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2013. - Vol. 16, № 1. - P. 185-189. - This work was performed under the aegis of the Integration Project and supported by the Belarusian Republican Foundation for Fundamental Research, Project No. F12SO-007
Аннотация: A method to analyze coherent transmission coefficients and the small-angle light scattering structure of PDLC layer with homogeneous and inhomogeneous boundary conditions on the droplets surface is discussed. For PDLC films with inhomogeneous boundary conditions at the polymer -- liquid crystal interface, asymmetry of the angular structure of light scattering with respect to the polar angle is revealed. Besides, experimental results on transmittance are presented.

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Держатели документа:
B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnastsi ave., Minsk, 220072 Belarus
L.V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences Krasnoyarsk,660036, Russia

Доп.точки доступа:
Loiko, V. A.; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Krakhalev, M. N.; Крахалев, Михаил Николаевич; Konkolovich, A. V.; Miskevich, A. A.

/ N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)

/ N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович

/ V. V. Slabko, A. S. Tsipotan, A. S. Aleksandrovsky // Photonics Nanostruct. - 2012. - Vol. 10, Is. 4. - P. 636-643, DOI 10.1016/j.photonics.2012.06.002. - Cited References: 15. - This work has been supported by the Ministry of Education and Science of Russian Federation (Contract 16.740.11.0150 and Grant 2.1.1/3455), by RAS Projects 29 and 31, by PSB RAS Project 3.9.5, by SB RAS Projects 43 and 101, and by SFU Grant F12. . - ISSN 1569-4410РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Optics + Physics, Applied

Аннотация: The possibility of light-controllable formation of heterogeneous nanostructures containing resonant metallic and semiconductor nanoparticles is considered. Interaction energy between light-induced dipole polarization of nanoparticles at modest light intensity can be much more than the thermal motion energy. The configuration of self-assembled nanostructure can be controlled by the frequency and polarization of the light.

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Доп.точки доступа:
Tsipotan, A. S.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Слабко, Виталий Васильевич; International Workshop on Theoretical and Computational Nano-Photonics (4th ; 26-28 Oct 2011 ; Bad Honnef, Germany)

/ N. V. Volkov [et al.] // Appl. Phys. Lett. - 2014. - Vol. 104, Is. 22. - Ст. 222406, DOI 10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118РУБ Physics, Applied

Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]

/ I. A. Tambasov [et al.] // Semicond. Sci. Technol. - 2014. - Vol. 29, Is. 8. - Ст. 82001, DOI 10.1088/0268-1242/29/8/082001. - Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156. . - ISSN 0268-1242. - ISSN 1361-6641РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter

Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Eremin, E. V.; Еремин, Евгений Владимирович; Yozhikova, E. V.; Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]

/ G. S. Patrin [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 348-351, DOI 10.4028/www.scientific.net/SSP.215.348. - Cited References: 8 . - ISSN 978-30383. - ISSN 1662-9779
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.


Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, K. G.; Патрин, Константин Геннадьевич; Alekseichik, E. A.; Алексейчик, Е. А.; Kobyakov, A. V.; Кобяков, Александр Васильевич; Yushkov, V. I.; Юшков, Василий Иванович; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)

/ M. I. Petrov [et al.] // Phys. Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740, DOI 10.1134/1.1129959. - Cited References: 26 . - ISSN 1063-7834РУБ Physics, Condensed Matter

Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity rho(T), critical current density J(c)(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). (C) 1997 American Institute of Physics.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич

/ M. I. Petrov [et al.] // Dokl. Akad. Nauk. - 1996. - Vol. 346, Is. 5. - P. 616-618. - Cited References: 7 . - ISSN 0869-5652

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич

/ M. I. Petrov [et al.] // Superconductor Science and Technology. - 2001. - Vol. 14, Is. 9. - P. 798-805, DOI 10.1088/0953-2048/14/9/333 . - ISSN 0953-2048
Аннотация: Bulk Y3/4Lu1/4Ba2Cu3O7 + Cu1-xLixO composites with x = 0, 0.003 and 0.06 and varied volume content of Cu1-xLixO have been prepared. Analysis of the transport properties of the composites has shown that they can be represented as a network of superconductor-semiconductor-superconductor (S-Sm-S) weak links. The dependence of the critical current density on the normal resistance for the composites studied shows a behaviour similar to that for single Josephson junctions. The experimental temperature dependences of the critical current are qualitatively described in terms of a theory of S-Sm-S junctions that takes into account the Andreev reflection of carriers from the S-Sm and Sm-S interfaces.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич

/ M. I. Petrov [et al.] // Physica C-Superconductivity and its Applications. - 1997. - Vol. 282, Is. PART 4. - P. 2449-2450 . - ISSN 0921-4534
Аннотация: Composites HTSC + semiconductor with different carrier concentrations were prepared as a model of Josephson type contacts. Experimental temperature dependences of the critical current density Jc(T) in the composites are presented. The best congruence of experiment with theory was reached for the Schussler-Kummel consideration of Andreev scattering in S-Sm-S (S-superconductor, Sm-semiconductor) junctions.

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Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич

/ M. I. Petrov [et al.] // Physics of the Solid State. - 1997. - Vol. 39, Is. 5. - P. 735-740 . - ISSN 1063-7834
Аннотация: Results are presented of an experimental study of the temperature dependence of the electrical resistivity p(T), critical current density Jc(T), and current-voltage characteristics of polycrystalline composites based on the high-temperature superconductor Y3/4Lu1/4Ba2Cu3O7 and copper oxide with different lithium doping levels. The experimental temperature dependence of the critical current of composites with varying volume content of the semiconductor ingredient and varying charge carrier concentration are found to be in qualitative agreement with theory which takes account of Andreev reflection of the carriers at the S-Sm and Sm-S surfaces of the S-Sm-S Josephson junction (where S is the superconductor and Sm is the semiconductor). В© 1997 American Institute of Physics.

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Доп.точки доступа:
Петров, Михаил Иванович; Petrov, M. I.; Balaev, D. A.; Балаев, Дмитрий Александрович; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич

/ M. I. Petrov [et al.] // Doklady Physics. - 1996. - Vol. 41, Is. 2. - P. 59-61 . - ISSN 1028-3358

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Доп.точки доступа:
Петров, Михаил Иванович; Petrov, M. I.; Balaev, D. A.; Балаев, Дмитрий Александрович; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Khrustalev, B. P.; Хрусталев, Борис Петрович; Aleksandrov, K. S.; Александров, Кирилл Сергеевич

/ S. Y. Vetrov, A. Y. Avdeeva, I. V. Timofeev // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 5. - P. 755-761, DOI 10.1134/S1063776111140093. - Cited References: 33. - This work was supported by projects nos. NSh-7810.2010.3, RNP.2.1.1.3455, 27.1 and 3.9.1 of the Russian Academy of Sciences, 5 and 144 of the Siberian Branch of the Russian Academy of Sciences, and State contract no. 02.740.11.0220 according to the program Research and Scientific-Pedagogical Brainpower of Innovated Russia. . - ISSN 1063-7761РУБ Physics, Multidisciplinary

Аннотация: The spectral properties of a one-dimensional photonic crystal with a defect nanocomposite layer that consists of metallic nanoballs distributed in a transparent matrix and is characterized by an effective resonance permittivity are studied. The problem of calculating the transmission, reflection, and absorption spectra of p-polarized waves in such structures is solved for oblique incidence of light, and the spectral manifestation of defect-mode splitting as a function of the volume fraction of nanoballs and the structural parameters is studied. The splitting is found to depend substantially on the nanoball concentration in the defect, the defect layer thickness, and the angle of incidence. The angle of incidence is found at which the resonance frequency of the nanocomposite is located near the edge of the bandgap or falls in the frequency region of a continuous spectrum. The resonance situation appearing in this case results in an additional transmission band or an additional bandgap in the transmission spectrum.

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Держатели документа:
[Vetrov, S. Ya.
Avdeeva, A. Yu.] Siberian Fed Univ, Krasnoyarsk 660074, Russia
[Timofeev, I. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Avdeeva, A. Y.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Ветров, Степан Яковлевич

/ V. G. Arkhipkin, I. V. Timofeev ; ed.: SA Gurevich, SA Gurevic ; Laser Optics 2000 Conference (2000 ; Jun ; 26-30 ; St. Petersburg) // Laser optics 2000: semiconductor lasers and optical communication. Ser. proceedings of the society of photo-optical instrumentation engineers (SPIE) : SPIE-Int. Soc. Optical Engineering, 2001. - Vol. 4354. - P. 111-117, DOI 10.1117/12.418816. - Cited References: 18 . - ISBN 0277-786X. - ISBN 0-8194-4044-2РУБ Optics

Аннотация: The features of spatial and temporal evolution of two short laser pulses propagating in three-level medium under conditions of coherent population trapping and adiabatic population transfer is investigated in adiabatic approximation. It is shown that in both cases pulses can penetrate into a medium at a distance considerably exceeding the length of linear absorption of a single weak probe pulse in absence of a coupling pulse at adjacent transition. The difference of spatial and temporal evolution of level populations in processes of coherent population trapping and adiabatic population transfer is demonstrated. Also we show that the concept of dressed-field pulses is consequence of Manley-Raw relation.

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Доп.точки доступа:
Timofeev, I. V.; Тимофеев, Иван Владимирович; Gurevich, S. A. \ed.\; Архипкин, Василий Григорьевич; Laser Optics, International Conference (2000 ; June ; 26-30 ; St. Petersburg)

/ N. V. Kazak [et al.] // Phys. Status Solidi B. - 2015. - Vol. 252, Is. 10. - P. 2245-2258, DOI 10.1002/pssb.201552143. - Cited References: 46. - This work has been financed by the MECOM Project MAT11/23791, and DGA IMANA project E-34, Council for Grants of the President of the Russian Federation (project nos. NSh-2886.2014.2, SP-938.2015.5), and Russian Foundation for Basic Research (project nos. 13-02-00958-a, 13-02-00358-a, 14-02-31051-mol-a). The work of one of the coauthors (M.S.P.) was supported by the program of Foundation for promoting the development of small enterprises in scientific and technical sphere ("UMNIK" program). . - ISSN 0370. - ISSN 1521-3951
   Перевод заглавия: Кристаллическая и локальная атомная структура MgFeBO4, Mg0.5Co0.5FeBO4 and CoFeBO4: эффект замещения СоРУБ Physics, Condensed Matter

Аннотация: Single-crystalline MgFeBO4, Mg0.5Co0.5FeBO4, and CoFeBO4 have been grown by the flux method. The samples have been characterized by X-ray spectral analysis, X-ray diffraction, and X-ray absorption spectroscopy. The X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectra have been measured at the Fe and Co K-edges over a wide temperature range (6.5– 300 K). The composition, the charge state, and local environ- ment of both Fe and Co atoms have been determined. The effects of Co substitution for Mg on the local structural distortions have been revealed experimentally and the M–O bond anisotropy has been found.
Монокристаллические образцы CoFeBO4 были выращены раствор-расплавным методом. Образцы были охарактеризованы с помощью рентгеноспектрального анализа, рентгеновской дифракции и спектроскопии поглощения рентгеновских лучей. Спектры вблизи K-края поглощения рентгеновского излучения структуры (XANES) и далее рентгеновского поглощения тонкой структуры (EXAFS) были измерены для Fe и Co в широком диапазоне температур (6.5- 300К). Состав, состояние заряда, и локальная положение и Fe и Co атомов были определены. Эффекты замещения Co магнием Mg на местные структурные искажения были выявлены экспериментально и анизотропия связи М-О была найдена.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
National Research Center Kurchatov Institute, Moscow, Russian Federation
Servicio de Medidas Fi, sicas, Universidad de Zaragoza, Zaragoza, Spain
Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon, CSIC, Universidad de Zaragoza, Zaragoza, Spain
O. O. Galkin Institute for Physics and Engineering, National Academy of Sciences of Ukraine, Donetsk, Ukraine

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Knyazev, Yu. V.; Князев, Юрий Владимирович; Ivanova, N. B.; Иванова, Наталья Борисовна; Zubavichus, Y. V.; Veligzhanin, A. A.; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Bezmaternykh, L. N.; Безматерных, Леонард Николаевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Arauzo, A.; Bartolome, J.; Lamonova, K. V.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич

/ O. B. Romanova [et al.] // 20th Int. Conf. on Magnetism (ICM-2015) : book of abstracts. - 2015. - P. 241

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Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Galyas, A. I.; Галяс А. И.; Yanushkevich, K. I.; Янушкевич, Казимир Иосифович; Sokolov, V. V.; Соколов В. В.; International Conference on Magnetism(20 ; 2015 ; Jul ; 5-10 ; Barselona, Spain)