Перевод заглавия: Влияние перестановок Bi3+/In3+ и Mn2+ -допирования на структуру и оптические свойства двойного перовскита Cs2NaBi1-xInxCl6
Рубрики:
HALIDE DOUBLE PEROVSKITE
LEAD-FREE
ENERGY-TRANSFER
NANOCRYSTALS
BR
Кл.слова (ненормированные):
band gap engineering -- halide double perovskites -- Mn2+ doping
HALIDE DOUBLE PEROVSKITE
LEAD-FREE
ENERGY-TRANSFER
NANOCRYSTALS
BR
Кл.слова (ненормированные):
band gap engineering -- halide double perovskites -- Mn2+ doping
Аннотация: The halide double perovskite family represented by A2(B+,B3+)X6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic fields. Herein, the design and the experimental synthesis of a new family of Mn2+‐doped Cs2NaBi1‐xInxCl6 crystals with an intense orange‐yellow emission band are reported, and the phase formation stability is discussed via a combined experimental–theoretical approach. Depending on the manipulation of Bi3+/In3+ combination, the band gap increases with In3+ content, and a subsequent evolution from indirect to direct band gap is verified. First‐principles calculations and parity analyses indicate a parity forbidden effect on Cs2NaInCl6, and a combination effect of absorption on Cs2NaBi1‐xInxCl6 from both Cs2NaBiCl6 and Cs2NaInCl6. The associated Mn2+‐doped photoluminescence depending on the Bi3+/In3+ substitution is also addressed from the variation of the different Mn–Cl environment and neighboring‐cation effect.
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Держатели документа:
Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China.
Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China.
Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China.
KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Dept Engn Phys & Radioelect, Krasnoyarsk 660041, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.
South China Univ Technol, State Key Lab Luminescent Mat, Guangzhou 510641, Guangdong, Peoples R China.
South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China.
Доп.точки доступа:
Zhou, Jun; Rong, Ximing; Zhang, Peng; Molokeev, M. S.; Молокеев, Максим Сергеевич; Wei, Peijia; Liu, Quanlin; Zhang, Xiuwen; Xia, Zhiguo