Труды сотрудников института физики

/ V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2004. - Vol. 98, Is. 3. - P. 556-564, DOI 10.1134/1.1705708. - Cited References: 18. - This work was financially supported by the Russian Foundation for Basic Research (project no. 03-02-16124), RFFI-KKFN “Eniseœ” (project no. 02-02-97705), INTAS (project no. 01-0654), integration program of URO and Siberian Division, Russian Academy of Sciences . - ISSN 1063-7761РУБ Physics, Multidisciplinary

Аннотация: The spectral density, dispersion relations, and the position of the Fermi level for n-doped compositions based on NCO and LCO were calculated within the framework of the generalized tight binding method. As distinguished from LCO, the dielectric gap in NCO is nonlinear in character. We observe a virtual level both at the bottom of the conduction band and at the top of the valence band in both compounds. However, its position corresponds to the extreme bottom of the conduction band in LCO and is 0.1 - 0.2 eV above the bottom in NCO. This explains why we observe Fermi level pinning in n-LCO as the concentration of the doping component grows and reproduce its absence in NCCO at low doping values. We also found both compositions to be unstable in a narrow concentration range with respect to a nonuniform charge density distribution. The relation between the phase diagram for NCCO and the calculated electronic structure is discussed. (C) 2004 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович