Труды сотрудников института физики

/ H. P. Ji [et al.] // Inorg. Chem. - 2014. - Vol. 53, Is. 10. - P. 5129-5135, DOI 10.1021/ic500230v. - Cited References: 31. - This work was supported by the National Natural Science Foundations of China (Grant Nos. 51032007, 51002146, 51272242), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20130022110006), and the Program for New Century Excellent Talents in University of Ministry of Education of China (NCET-12-0950). V.V.A. gratefully acknowledges the Ministry of Education and Science of the Russian Federation for the financial support. S.H. would like to acknowledge the China Scholarship Council (CSC) for providing a doctoral scholarship for his Ph.D. study at the University of Auckland. . - ISSN 0020-1669. - ISSN 1520-510XРУБ Chemistry, Inorganic & Nuclear

Аннотация: New compound discovery is of interest in the field of inorganic solid-state chemistry. In this work, a whitlockite-type structure Sr1.75Ca1.25(PO4)2 newly found by composition design in the Sr3(PO4)2–Ca3(PO4)2 join was reported. Crystal structure and luminescence properties of Sr1.75Ca1.25(PO4)2:Eu2+ were investigated, and the yellow-emitting phosphor was further employed in fabricating near-ultraviolet-pumped white light-emitting diodes (w-LEDs). The structure and crystallographic site occupancy of Eu2+ in the host were identified via X-ray powder diffraction refinement using Rietveld method. The Sr1.75Ca1.25(PO4)2:Eu2+ phosphors absorb in the UV–vis spectral region of 250–430 nm and exhibit an intense asymmetric broadband emission peaking at 518 nm under λex = 365 nm which is ascribed to the 5d–4f allowed transition of Eu2+. The luminescence properties and mechanism are also investigated as a function of Eu2+ concentration. A white LED device which is obtained by combining a 370 nm UV chip with commercial blue phosphor and the present yellow phosphor has been fabricated and exhibit good application properties.

Смотреть статью,
Scopus,
WoS,
Для получение полного текста обратитесь в библиотеку

Держатели документа:
China Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China
Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia
SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
Tomsk State Univ, Funct Elect Lab, Tomsk 634050, Russia
Novosibirsk State Univ, Lab Semicond & Dielect Mat, Novosibirsk 630090, Russia

Доп.точки доступа:
Ji, H. P.; Huang, Z. H.; Xia, Z. G.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Atuchin, V. V.; Fang, M. H.; Huang, S. F.