/ N. V. Kazak [et al.]> // J. Phys.: Condens. Matter. - 2005. -
Vol. 17: 2nd International Symposium on Physics of Solids Under High Pressure Using Nuclear Probes (JUL 20-24, 2004, Cologne, GERMANY),
Is. 11. - P. S795-S800,
DOI 10.1088/0953-8984/17/11/008. - Cited References: 16
. - ISSN 0953-8984
РУБ Physics, Condensed Matter
Аннотация: We present the results of an in-plane resistivity study of the
solid solutions Fe1-xVxBO3. The measurements were made on single crystals with concentration x = 0.02, 0.13, 0.18, 0.3, 0.95, 1.0 in the temperature range 220-600 K. Semiconducting behaviour for samples with x >= 0.13 was found. Mott variable-range-hopping transport rho(T) = rho(0)exp(T*/T)(alpha) has been observed with alpha = 1/4 at T <290 K, suggesting carrier localization. Above this temperature the activation-type conductivity, with activation energies, E-a, about 1 eV for all samples, is observed. The possible electronic states and band structure of Fe1-xVx BO3 crystals are discussed in the different pressure ranges: P < P-c(Fe), p(c)(Fe) < p < p(c)(V) P > P-c(V) where p(c)(Fe) P-c(V) are the critical pressure values for FeBO3 and VBO3, respectively.
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Держатели документа: Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany
Krasnoyarsk State Tech Univ, Krasnoyarsk 660074, Russia
II Physikalisches Institut, Universitat zu Koeln, 50937 Koeln, Germany
Krasnoyarsk State Tech. University, 660074 Krasnoyarsk, Russian Federation
Доп.точки доступа: Kazak, N. V.; Казак, Наталья Валерьевна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Abd-Elmeguid, M. M.; Ivanova, N. B.; Иванова, Наталья Борисовна