/ A. P.
Semenov [et al.]> // Tech. Phys. Lett. - 2005. -
Vol. 31,
Is. 12. - P. 1022-1025,
DOI 10.1134/1.2150887. - Cited References: 11
. - ISSN 1063-7850
РУБ Physics, Applied
Аннотация: A new approach to the synthesis of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of their occurrence between fullerene molecules. The proposed method has been experimentally implemented by using an Ar+ ion beam to sputter C-60 /C-70 fullerene mixtures (synthesized in a plasmachemical reactor at a pressure of 10(5) Pa) pressed into disk targets with a doping element (Fe, Na, B, Gd, or Se). The ion beam sputtering of dopant-containing fullerene mixtures in a vacuum of similar to 10(-2) Pa allowed micron-thick films containing C-60 and C-70 fullerenes and the corresponding dopant element (Fe, Na, B, Gd, or Se) to be grown on quartz substrates. (C) 2005 Pleiades Publishing, Inc.
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Держатели документа: Russian Acad Sci, Siberian Div, Presidium Buryatian Sci Ctr, Dept Phys Problems, Ulan Ude, Buryatia, Russia
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Russian Acad Sci, Siberian Div, Inst Geol, Ulan Ude, Buryatia, Russia
ИФ СО РАН
Department for Physical Problems, Presidium of the Buryatian Scientific Center, Russian Academy of Sciences, Ulan-Ude, Buryatia, Russian Federation
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Institute of Geology, Siberian Division, Russian Academy of Sciences, Ulan-Ude, Buryatia, Russian Federation
Доп.точки доступа: Semenov, A. P.; Semenova, I. A.; Bulina, N. V.; Булина, Наталья Васильевна; Lopatin, V. A.; Лопатин, Владислав Александрович; Karmanov, N. S.; Churilov, G. N.; Чурилов, Григорий Николаевич