Библиотека института биофизики СО РАН

Главная

Базы данных

Труды сотрудников ИБФ СО РАН - результаты поиска

Вид поиска

Каталог книг и продолжающихся изданий библиотеки Института биофизики СО РАН

Иностранные журналы библиотеки Института биофизики СО РАН

Отечественные журналы библиотеки Института биофизики СО РАН

Каталог диссертаций ИБФ СО РАН

Труды сотрудников ИБФ СО РАН

Область поиска

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=FET<.>)

Общее количество найденных документов : 6
Показаны документы с 1 по 6

Analysis of interactions between proteins and small-molecule drugs by a biosensor based on a graphene field-effect transistor / S. C. Xu, T. J. Wang, G. F. Liu [et al.] // Sens. Actuator B-Chem. - 2021. - Vol. 326. - Ст. 128991, DOI 10.1016/j.snb.2020.128991. - Cited References:66. - We are grateful for financial support from the Taishan Scholars Program of Shandong Province (tsqn201812104), the Qingchuang Science and Technology Plan of Shandong Province (2019KJJ017 and 2020KJC004), the National Natural Science Foundation of China (61671107, 62071085, 11704059, and 31802309), and the Youth Innovation Team Lead-Education Project of Shandong Educational Committee. . - ISSN 0925-4005

РУБ Chemistry, Analytical + Electrochemistry + Instruments & Instrumentation
Рубрики:
LABEL-FREE DETECTION
CHEMICAL-VAPOR-DEPOSITION
DNA HYBRIDIZATION
Кл.слова (ненормированные):
Single-crystal graphene -- FET -- Binding kinetics -- LMW drugs -- Imatinib
Аннотация: We synthesized large-area single-crystal graphene sheets to use them in biosensors based on field-effect transistors (FET) for quantitative analysis of interaction kinetics and affinity between the imatinib drug and its target protein kinase Abl1. The G-FET biosensor showed an excellent performance and recognized imatinib at as low as 15.5 fM. The biosensor also showed a linear response to the logarithm of imatinib concentration in the 0.1 pM-10 mu M range. This graphene-based FET biosensor (G-FET) was also applied toquantify Abl1 Y253 F mutation and Abl1 dependency on Mg2+ to bind to imatinib in real-time. Results demonstrated in this work clearly showed that the novel G-FET biosensors are very promising to analyze interactions between proteins and low molecular weight drugs.

WOS
Держатели документа:
Dezhou Univ, Inst Biophys, Shandong Key Lab Biophys, Dezhou 253023, Peoples R China.
Fed Res Ctr Krasnoyarsk Sci Ctr SB RAS, Inst Biophys SB RAS, Krasnoyarsk 660036, Russia.
Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China.

Доп.точки доступа:
Xu, Shicai; Wang, Tiejun; Liu, Guofeng; Cao, Zanxia; Frank, Ludmila A.; Jiang, Shouzhen; Zhang, Chao; Li, Zhenhua; Krasitskaya, Vasilisa V.; Li, Qiang; Sha, Yujie; Zhang, Xiumei; Liu, Huilan; Wang, Jihua; Taishan Scholars Program of Shandong Province [tsqn201812104]; Qingchuang Science and Technology Plan of Shandong Province [2019KJJ017, 2020KJC004]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [61671107, 62071085, 11704059, 31802309]; Youth Innovation Team Lead-Education Project of Shandong Educational Committee

Найти похожие

Analysis of interactions between proteins and small-molecule drugs by a biosensor based on a graphene field-effect transistor / S. Xu, T. Wang, G. Liu [et al.] // Sens Actuators, B Chem. - 2021. - Vol. 326. - Ст. 128991, DOI 10.1016/j.snb.2020.128991 . - ISSN 0925-4005
Кл.слова (ненормированные):
Binding kinetics -- FET -- Imatinib -- LMW drugs -- Single-crystal graphene -- Biosensors -- Biosynthesis -- Drug interactions -- Graphene -- Graphene transistors -- Proteins -- Single crystals -- Graphene field-effect transistors -- Graphene sheets -- Interaction kinetics -- Linear response -- Low molecular weight drugs -- Real time -- Small-molecule drugs -- Target proteins -- Field effect transistors
Аннотация: We synthesized large-area single-crystal graphene sheets to use them in biosensors based on field-effect transistors (FET) for quantitative analysis of interaction kinetics and affinity between the imatinib drug and its target protein kinase Abl1. The G-FET biosensor showed an excellent performance and recognized imatinib at as low as 15.5 fM. The biosensor also showed a linear response to the logarithm of imatinib concentration in the 0.1 pM-10 ?M range. This graphene-based FET biosensor (G-FET) was also applied to quantify Abl1 Y253 F mutation and Abl1 dependency on Mg2+ to bind to imatinib in real-time. Results demonstrated in this work clearly showed that the novel G-FET biosensors are very promising to analyze interactions between proteins and low molecular weight drugs. © 2020 Elsevier B.V.

Scopus
Держатели документа:
Shandong Key Laboratory of Biophysics, Institute of Biophysics, Dezhou University, Dezhou, 253023, China
Institute of Biophysics SB RAS, Federal Research Center “Krasnoyarsk Science Center SB RAS”, Krasnoyarsk, 660036, Russian Federation
Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan, 250358, China

Доп.точки доступа:
Xu, S.; Wang, T.; Liu, G.; Cao, Z.; Frank, L. A.; Jiang, S.; Zhang, C.; Li, Z.; Krasitskaya, V. V.; Li, Q.; Sha, Y.; Zhang, X.; Liu, H.; Wang, J.

Найти похожие

Highly-sensitive graphene field effect transistor biosensor using PNA and DNA probes for RNA detection / M. Tian, M. Qiao, C. C. Shen [et al.] // Appl. Surf. Sci. - 2020. - Vol. 527. - Ст. 146839, DOI 10.1016/j.apsusc.2020.146839. - Cited References:62. - We are grateful for financial support from National Natural Science Foundation of China (11604040, 61671107), Taishan Scholars Program of Shandong Province (tsqn201812104), Natural Science Foundation of Shandong Province (ZR2019PC026) and Qingchuang Science and Technology Plan of Shandong Province (2019KJJ017). . - ISSN 0169-4332. - ISSN 1873-5584

РУБ Chemistry, Physical + Materials Science, Coatings & Films + Physics,
Рубрики:
PEPTIDE NUCLEIC-ACID
LABEL-FREE DETECTION
SELECTIVE RECOGNITION
Кл.слова (ненормированные):
Graphene field effect transistor -- PNA probe -- RNA detection
Аннотация: DNA probe-based biosensors have been widely developed for detecting a range of analytes. However, the DNA probe-based sensors suffer from many problems, such as long hybridization time, background electrical noise, and relatively poor specificity. In this paper, we report the ultrasensitive detection for RNA by graphene field effect transistor (G-FET) biosensor using PNA and DNA probes. The limit of detection (LOD) of the PNA probe modified G-FET sensor is down to 0.1 aM, which is three orders of magnitude lower than that of DNA probe modified G-FET sensor. We demonstrate that both PNA and DNA probe-modified G-FET have great potential in quantitative detection of RNA. A good linear electrical response to RNA concentrations is obtained in a broad range from 0.1 aM to 1 pM for PNA probe-modified G-FET and from 100 aM to 1 pM for DNA probe-modified GFET, respectively. The PNA probe-modified G-FET sensors significantly reduce the detection time compared to DNA probe-modified G-FET sensors. Moreover, the electrical response of PNA probe-modified G-FET biosensor to non-complementary RNA is negligible, showing high specificity for RNA detection. What's more, the G-FET sensor was also used to detect RNA in human serum, making it a promising way for future detection of RNA in biomedical research and early clinical diagnosis.

WOS
Держатели документа:
Dezhou Univ, Inst Biophys, Shandong Key Lab Biophys, Dezhou 253023, Peoples R China.
Krasnoyarsk Sci Ctr SB RAS, Inst Biophys SB RAS, Fed Res Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Tian, Meng; Qiao, Mei; Shen, Congcong; Meng, Fanlu; Frank, Ludmila A.; Krasitskaya, Vasilisa V.; Wang, Tiejun; Zhang, Xiumei; Song, Ruihong; Li, Yingxian; Liu, Jianjian; Xu, Shicai; Wang, Jihua; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11604040, 61671107]; Taishan Scholars Program of Shandong Province [tsqn201812104]; Natural Science Foundation of Shandong ProvinceNatural Science Foundation of Shandong Province [ZR2019PC026]; Qingchuang Science and Technology Plan of Shandong Province [2019KJJ017]

Найти похожие

Highly-sensitive graphene field effect transistor biosensor using PNA and DNA probes for RNA detection / M. Tian, M. Qiao, C. Shen [et al.] // Appl Surf Sci. - 2020. - Vol. 527. - Ст. 146839, DOI 10.1016/j.apsusc.2020.146839 . - ISSN 0169-4332
Кл.слова (ненормированные):
Graphene field effect transistor -- PNA probe -- RNA detection -- Biosensors -- Clinical research -- Diagnosis -- DNA -- Field effect transistors -- Graphene -- RNA -- Biomedical research -- Clinical diagnosis -- Electrical response -- Graphene field-effect transistors -- Limit of detection -- Quantitative detection -- Three orders of magnitude -- Ultrasensitive detection -- Graphene transistors
Аннотация: DNA probe-based biosensors have been widely developed for detecting a range of analytes. However, the DNA probe-based sensors suffer from many problems, such as long hybridization time, background electrical noise, and relatively poor specificity. In this paper, we report the ultrasensitive detection for RNA by graphene field effect transistor (G-FET) biosensor using PNA and DNA probes. The limit of detection (LOD) of the PNA probe-modified G-FET sensor is down to 0.1 aM, which is three orders of magnitude lower than that of DNA probe-modified G-FET sensor. We demonstrate that both PNA and DNA probe-modified G-FET have great potential in quantitative detection of RNA. A good linear electrical response to RNA concentrations is obtained in a broad range from 0.1 aM to 1 pM for PNA probe-modified G-FET and from 100 aM to 1 pM for DNA probe-modified G-FET, respectively. The PNA probe-modified G-FET sensors significantly reduce the detection time compared to DNA probe-modified G-FET sensors. Moreover, the electrical response of PNA probe-modified G-FET biosensor to non-complementary RNA is negligible, showing high specificity for RNA detection. What's more, the G-FET sensor was also used to detect RNA in human serum, making it a promising way for future detection of RNA in biomedical research and early clinical diagnosis. © 2020 Elsevier B.V.

Scopus
Держатели документа:
Shandong Key Laboratory of Biophysics, Institute of Biophysics, Dezhou University, Dezhou, 253023, China
Institute of Biophysics SB RAS, Federal Research Center “Krasnoyarsk Science Center SB RAS”, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Tian, M.; Qiao, M.; Shen, C.; Meng, F.; Frank, L. A.; Krasitskaya, V. V.; Wang, T.; Zhang, X.; Song, R.; Li, Y.; Liu, J.; Xu, S.; Wang, J.

Найти похожие

Protein biosensor based on Schottky barrier nanowire field effect transistor / T. E. Smolyarova, L. V. Shanidze, A. V. Lukyanenko [et al.] // Talanta. - 2022. - Vol. 239. - Ст. 123092, DOI 10.1016/j.talanta.2021.123092. - Cited References:44. - The reported study was funded by RFBR according to the research project N? 20-32-90134. The authors thank RFBR, Krasnoyarsk Terri-tory and Krasnoyarsk Regional Fund of Science (projects nos. 20-42-243007 and 20-42-240013) and the Government of the Russian Feder-ation, Mega Grant for the Creation of Competitive World-Class Labora-tories (Agreement no. 075-15-2019-1886) for financial support. Electron microscopy investigations were conducted with the help of equipment of the Krasnoyarsk Territorial Shared Resource Center, Krasnoyarsk Scientific Center, Russian Academy of Sciences. . - ISSN 0039-9140. - ISSN 1873-3573

РУБ Chemistry, Analytical
Рубрики:
SIMULATION
MODEL
Кл.слова (ненормированные):
Silicon-on-insulator -- Schottky contacts FET -- Si nanowire biosensor -- Back -- gate nanowire FET
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-oninsulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (I-DS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.

WOS
Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Fed Res Ctr KSC SB RAS, Krasnoyarsk 660036, Russia.
Fed Res Ctr KSC SB RAS, Inst Biophys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Krasnoyarsk State Med Univ, Krasnoyarsk 660022, Russia.

Доп.точки доступа:
Smolyarova, Tatyana E.; Shanidze, Lev, V; Lukyanenko, Anna, V; Baron, Filipp A.; Krasitskaya, Vasilisa V.; Kichkailo, Anna S.; Tarasov, Anton S.; Volkov, Nikita; Tarasov, Anton; Kichkailo, Anna; Baron, Filipp; Smolyarova, Tatyana; RFBRRussian Foundation for Basic Research (RFBR) [20-32-90134]; Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Feder-ation, Mega Grant for the Creation of Competitive World-Class Labora-tories [075-15-2019-1886]; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Terri-tory

Найти похожие

Protein biosensor based on Schottky barrier nanowire field effect transistor / T. E. Smolyarova, L. V. Shanidze, A. V. Lukyanenko [et al.] // Talanta. - 2022. - Vol. 239. - Ст. 123092, DOI 10.1016/j.talanta.2021.123092 . - ISSN 0039-9140
Кл.слова (ненормированные):
Back gate nanowire FET -- Schottky contacts FET -- Si nanowire biosensor -- Silicon-on-insulator -- Band diagram -- Biosensors -- Drain current -- Electron beam lithography -- Molecular beam epitaxy -- MOSFET devices -- Schottky barrier diodes -- Silicon on insulator technology -- Silicon wafers -- Back gate nanowire FET -- Back gates -- Nanowire biosensors -- Nanowire FET -- Protein biosensors -- Schottky barriers -- Schottky contact FET -- Schottky contacts -- Si nanowire biosensor -- Silicon on insulator -- Nanowires
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors. © 2021 Elsevier B.V.

Scopus
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Biophysics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Krasnoyarsk State Medical University, Krasnoyarsk, 660022, Russian Federation

Доп.точки доступа:
Smolyarova, T. E.; Shanidze, L. V.; Lukyanenko, A. V.; Baron, F. A.; Krasitskaya, V. V.; Kichkailo, A. S.; Tarasov, A. S.; Volkov, N.

Найти похожие

Тематический навигатор

Другие библиотеки

Библиотека института физики

Центральная научная библиотека КНЦ СО РАН

Библиотека института химии и химический технологии

Библиотека института вычислительного моделирования

Библиотека института леса

Библиотека СФУ

Краевая научная библиотека

© Международная Ассоциация пользователей и разработчиков электронных библиотек и новых информационных технологий
(Ассоциация ЭБНИТ)