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(La0.4Eu0.6)0.7Pb0.3MnO3 single crystal: magnetic and transport properties; electron magnetic resonance measurements / K. G. Patrin [et al.] // Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics” / chairman G. A. Petrakovskii. - 2007. - P. 15
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.

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Доп.точки доступа:
Petrakovskii, G. A. \chairman\; Петраковский, Герман Антонович; Patrin, K. G.; Патрин, Константин Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Petrakovskii, G. A.; Boni, P.; Clementyev, E.; Sablina, K. A.; Саблина, Клара Александровна; Eremin, E. V.; Еремин, Евгений Владимирович; Vasilev, V.; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; March 20-23 ; Krasnoyarsk)
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A tool to investigate the spatial magnetic phase separation phenomena in manganites [Text] / O. Martyanov, V. Yudanov, R. Lee [et al.] // Physics of the Solid State. - 2006. - P. 1–3

Доп.точки доступа:
Martyanov, O.; Yudanov, V.; Lee, R.; Volkov, N. V.; Волков, Никита Валентинович; Sablina, K. A.; Саблина, Клара Александровна
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Adiabatic calorimetric study of the intense magnetocaloric effect and the heat capacity of (La(0.4)Eu(0.6))(0.7)Pb(0.3)MnO(3) / A. V. Kartashev [et al.] // Phys. Solid State. - 2008. - Vol. 50, Is. 11. - P. 2115-2120, DOI 10.1134/S1063783408110188. - Cited References: 15. - This study was supported by the Council on Grants from the President of the Russian Federation for the Support of Leading Scientific Schools of the Russian Federation (NSh-1011.2008.2) and the Siberian Branch of the Russian Academy of Sciences ( Lavrent'ev Competition of Young Scientists Projects, grant no. 51) within the framework of the Integration Project no. 3.7 of the Siberian Branch of the Russian Academy of Sciences. . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
LA0.7CA0.3MNO3
MANGANITES
Кл.слова (ненормированные):
75 -- 30 -- Sg -- 75 -- 40 -- Cx
Аннотация: The temperature dependences of the intense magnetocaloric effect T (AD)(T, H) and the heat capacity C (p) (T) of the (La(0.4)Eu(0.6))(0.7)Pb(0.3)MnO(3) manganite are directly measured using adiabatic calorimetry. The experimental dependences T (AD)(T) are in satisfactory agreement with those calculated from the data on the behavior of the magnetization. The factors responsible for the absence of an anomaly in the experimental temperature dependence of the heat capacity C (p) (T) in the range of the magnetic phase transition are discussed.

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Держатели документа:
[Kartashev, A. V.
Flerov, I. N.
Volkov, N. V.
Sablina, K. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Flerov, I. N.
Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660079, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk, 660079, Russian Federation

Доп.точки доступа:
Kartashev, A. V.; Карташев, Андрей Васильевич; Flerov, I. N.; Флёров, Игорь Николаевич; Volkov, N. V.; Волков, Никита Валентинович; Sablina, K. A.; Саблина, Клара Александровна
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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Analysis of the exchange magnetic structure in Pb3Mn7O15 / E. V. Eremin [et al.] // J. Exp. Theor. Phys. - 2017. - Vol. 124, Is. 5. - P. 792-804, DOI 10.1134/S1063776117040112. - Cited References: 16 . - ISSN 1063-7761
Кл.слова (ненормированные):
Crystallography -- Magnetic properties -- Magnetic structure -- Magnetism -- Manganese -- Indirect couplings -- Manganese ions -- Structural and magnetic properties -- Single crystals
Аннотация: The indirect-coupling model is used to analyze the exchange magnetic structure of Pb3Mn7O15 in the hexagonal setting. The ratios of manganese ions Mn4+/Mn3+ in each nonequivalent position are determined. Pb3(Mn0.95Ge0.05)7O15 and Pb3(Mn0.95Ga0.05)7O15 single crystals are grown by the solution–melt method in order to test the validity of the proposed model. The structural and magnetic properties of the single crystals are studied. The magnetic properties of the grown single crystals are compared with those of nominally pure Pb3Mn7O15. © 2017, Pleiades Publishing, Inc.

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Публикация на русском языке Анализ обменной магнитной структуры Pb3Mn7O15 [Текст] / Е. В. Еремин [и др.] // Журн. эксперим. и теор. физ. : Наука, 2017. - Т. 151 Вып. 5. - С. 930-943

Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 3, Novosibirsk, Russian Federation
Novosibirsk State University, ul. Pirogova 2, Novosibirsk, Russian Federation

Доп.точки доступа:
Eremin, E. V.; Еремин, Евгений Владимирович; Volkov, N. V.; Волков, Никита Валентинович; Sablina, K. A.; Саблина, Клара Александровна; Bayukov, O. A.; Баюков, Олег Артемьевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Komarov, V. Y.
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Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si / A. V. Lukyanenko [et al.] // Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 111. - This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043

Материалы конференции

Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Gustaitsev, A. O.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; Jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАН; Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир", центр межрегионального инновационного развития
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Anomalous spectral properties of strongly correlated systems within the cluster perturbation theory / V. I. Kuz'min, S. V. Nikolaev, S. G. Ovchinnikov // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст. I.P9. - P. 151-152. - Cited References: 4. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project no. 18-32-00256, RFBR and Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project: “18-42-240017 Features of electron-phonon coupling in high-temperature superconductors with strong electron correlations” and the research project: “18-42-243004 New thermoelectric materials based on multi-scale spatially inhomogeneous substituted rare-earth cobalt oxides and the Ruddlesden-Popper phases” . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Kuz'min, V. I.; Кузьмин, Валерий Ипполитович; Nikolaev, S. V.; Николаев, Сергей Викторович; Ovchinnikov, S. G.; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111) / A. S. Tarasov [et al.] // Thin Solid Films. - 2017. - Vol. 642. - P. 20-24, DOI 10.1016/j.tsf.2017.09.025. - Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2). . - ISSN 0040-6090
Кл.слова (ненормированные):
Iron silicides -- Wet etching -- Planar structures -- MOKE microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
M.V.Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Соловьев, Леонид Александрович; Shemukhin, A. A.; Чемухин, А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович
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10.

Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
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