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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Lukyanenko A. V., Lukyanenko A. V., Varnakov S. N., Volkov N. V.
Заглавие : Frequency-dependent magnetotransport properties of the schottky diode based on the Fe3Si/p-Si hybrid structure
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Third Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2015): proceedings. - Vladivostok: Dalnauka, 2015. - Ст.III.22.02o. - P. - ISBN 978-5-8044-1556-4
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Tarasov A. S., Smolyakov D. A., Dorofeev N. V., Rautckii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Magnetoresistance of the Mn/SiO2/p-Si Hybrid Structure
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Third Asian school-conference on physics and technology of nanostructured materials (ASCO-NANOMAT 2015): proceedings. - Vladivostok: Dalnauka, 2015. - Ст.IX.24.02p. - ISBN 978-5-8044-1556-4
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Baron F. A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device
Место публикации : J. Surf. Invest.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 9, Is. 5. - P.984-994. - ISSN 1027-4510, DOI 10.1134/S1027451015050432
Примечания : Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043.
Ключевые слова (''Своб.индексиров.''): magnetoresistance--magnetotransport properties--photoconductivity--bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Dorofeev N. V., Ovchinnikov S. G., Varnakov S. N., Volochaev M. N., Lukyanenko A. V., Volkov N. V.
Заглавие : Magnetic and transport properties of Fe3Si on the Si (111) substrate
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.59
Примечания : Библиогр.: 2. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.111
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Gustaitsev A. O., Tarasov A. S., Lukyanenko A. V., Varnakov S. N., Volkov N. V.
Заглавие : The magnetoimpedance effect in the Fe3Si/p-Si structure
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.161
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Smolyakov D. A., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : The dc magnetotransport properties of the Mn/SiO2/p-Si diode
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.173
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Lukyanenko A. V., Tarasov A. S., Yakovlev I. A., Tarasov I. A., Volochaev M. N., Volkov N. V.
Заглавие : Ferromagnetic resonance characterization of the single-crystal epitaxial Fe3Si film on the Si(111) substrate
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Third Asian school-conf. on physics and technol. of nanostructured mater. (ASCO-NANOMAT 2015): proceedings. - Vladivostok: Dalnauka, 2015. - Ст.III.24.04p. - ISBN 978-5-8044-1556-4
Примечания : Библиогр.: 3. - The work was supported in part by the Grant of the President of the Pussian Federation and the Pussian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Eremin E. V., Korobtsov V. V., Balashev V. V., Vikulov V. A., Solovyov L. A., Volkov N. V.
Заглавие : Magnetic, transport, and magnetotransport properties of the textured Fe3O4 thin films reactively deposited onto SiO2/Si
Место публикации : J. Alloys Compd.: Elsevier, 2016. - Vol. 688. - P.1095-1100. - ISSN 09258388 (ISSN), DOI 10.1016/j.jallcom.2016.07.138
Примечания : Cited References: 40. - This work was supported in part by the Russian Foundation for Basic Research, project no. 14-02-00234; the Russian Academy of Sciences, Program “Far East” no. 0262-2015-0057; and the Ministry of Education and Science of the Russian Federation, state order no. 16.663.2014K. The XRD study was supported by the state budget allocated to the Russian Academy of Sciences, fundamental research project no. V. 45.3.1. The authors are grateful to the Krasnoyarsk Regional Fund for Science and Technical Activity Support and the Council of the President of the Russian Federation on Grants.
Ключевые слова (''Своб.индексиров.''): magnetite--magnetoresistance--reactive deposition
Аннотация: The structural, magnetic, transport, and magnetotransport properties of Fe3O4 thin films with thicknesses from 38 nm to 95 nm are systematically investigated. The occurrence of the Verwey transition in these films at a temperature of about 120 K is established. It is found that the temperature dependences of the magnetic moment have a feature near 40 K, which can be attributed to the multiferroic phase. According to the X-ray diffraction data, the film structure represents a (001) texture. As was established using transmission electron microscopy, the height and width of texture crystallites increase with film thickness. Analysis of the temperature dependences of the resistivity showed that the dominant carrier transport mechanism in the films is thermoactivated tunneling. The thermoactivation energy, along with the room-temperature resistivity, decreases with increasing film thicknesses, which is most likely related to the variation in the crystallite size, especially in the crystallite width. The field dependence of magnetoresistance behaves similarly over the entire temperature range and has a positive MR peak in weak fields, which is related to spin-dependent tunneling through Fe3O4 grains and antiferromagnetically coupled antiphase boundaries. © 2016 Elsevier B.V.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.4. - P.214. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Tarasov I. A., Varnakov S. N., Bondarev I. A., Lukyanenko A. V., Volkov N. V.
Заглавие : Ferromagnetic Resonance Study of the epitaxial Fe3Si(111) film on the Si(111) substrate
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O5.5. - P.253. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2
Ключевые слова (''Своб.индексиров.''): iron silicide--fmr--magnetic anisotropy
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12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Eremin E. V., Korobtsov V .V., Balashev V. V., Vikulov V. A., Solovyov L. A., Volkov N. V.
Заглавие : Characterization and magnetotransport properties of textured Fe3O4 films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O10.21. - P.465. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2. - This work was partially supported by RFBR project no. 14-02-00234, the RAS «Far East» Program No 0262-2015-0057
Ключевые слова (''Своб.индексиров.''): magnetite--texture film--spin-dependent transport
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13.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Rautskii M. V., Volochaev M. N., Bondarev I. A., Volkov N. V.
Заглавие : FIB and photolithography fabrication of low-dimensional devices based on the Co/Al2O3/Ge/Al2O3/Si hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P10.17. - P.485. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Ключевые слова (''Своб.индексиров.''): spin injection--hybrid structures--fib
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Rautskii M. V., Lukyanenko A. V., Volochaev M. N., Varnakov S. N., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/ p -Si hybrid structure
Место публикации : AIP Adv.: American Institute of Physics, 2017. - Vol. 7, Is. 1. - Ст.015206. - ISSN 21583226 (ISSN), DOI 10.1063/1.4974876
Примечания : Cited References: 29. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research Projects Nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Ключевые слова (''Своб.индексиров.''): electric fields--impact ionization--ionization--magnetic fields--magnetism--manganese--schottky barrier diodes--effect of magnetic field--high magnetic fields--low temperatures--magnetic and electric fields--magnetotransport effects--magnetotransport phenomena--schottky barriers--switching devices--magnetic field effects
Аннотация: We report on abrupt changes in dc resistance and impedance of a diode with the Schottky barrier based on the Mn/SiO2/p-Si structure in a magnetic field. It was observed that at low temperatures the dc and ac resistances of the device change by a factor of more than 106 with an increase in a magnetic field to 200 mT. The strong effect of the magnetic field is observed only above the threshold forward bias across the diode. The ratios between ac and dc magnetoresistances can be tuned from almost zero to 108% by varying the bias. To explain the diversity of magnetotransport phenomena observed in the Mn/SiO2/p-Si structure, it is necessary to attract several mechanisms, which possibly work in different regions of the structure. The anomalously strong magnetotransport effects are attributed to the magnetic-field-dependent impact ionization in the bulk of a Si substrate. At the same time, the conditions for this process are specified by structure composition, which, in turn, affects the current through each structure region. The effect of magnetic field attributed to suppression of impact ionization via two mechanisms leads to an increase in the carrier energy required for initiation of impact ionization. The first mechanism is related to displacement of acceptor levels toward higher energies relative to the top of the valence band and the other mechanism is associated with the Lorentz forces affecting carrier trajectories between scatterings events. The estimated contributions of these two mechanisms are similar. The proposed structure is a good candidate for application in CMOS technology-compatible magnetic- and electric-field sensors and switching devices.
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15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Bondarev I. A., Ovchinnikov S. G.
Заглавие : Marnetic-field sensitivity of charge transport in silicon-based hybrid structures : Invited
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - С. 10 (Шифр В37/H99-812624296)
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyakov D. A., Rautskii M. V., Lukyanenko A. V., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.21 (Шифр В37/H99-812624296)
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17.

Вид документа : Однотомное издание
Шифр издания :
Заглавие : International workshop on actual problems of condensed matter physics : Program. Book of abstracts
Выходные данные : Krasnoyarsk, 2017
Колич.характеристики :30 с
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics (27 Mar. - 1 Apr. 2017; Krasnoyarsk/ Cheremushki) :
Содержание : Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate/ I. A. Bondarev. The magnetic anisotropy of the Fe and Fe(1-x)Si(x) thin films depend on/ I. A. Yakovlev [и др.]. Inverted opals as the Josephson networks of weak links/ S. I. Popkov [и др.]. Electronic structure and Fermi surface within the cluster perturbation theory in X-operators representation/ S. Nikolaev, V. I. Kuz'min, S. G. Ovchinnikov. DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3/ A. S. Fedorov [и др.]. Effect of interatomic exchange interaction on spin crossover and Mott-Hubbard transition under high pressure and the physical properties of the low Earth’s mantle/ S. G. Ovchinnikov [и др.]. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure/ I. A. Tarasov [и др.]. Marnetic-field sensitivity of charge transport in silicon-based hybrid structures/ N. V. Volkov [et al.]. Fabrication of multi-terminal planar devices based on epitaxial Fe1-xSix films grown on Si(111)/ A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] ; A. V. Luyanenko [и др.]. Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier/ M. V. Rautskii [и др.]. Small angle X-ray scattering and atomic structure of aptamer biomolecules/ R. Moryachkov [и др.]. Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties/ I. A. Tarasov [и др.]. Magnetic nanoparticles and DNA-aptamers conjugates for diagnostics and therapy of cancer/ A. E. Sokolov [и др.]. The microscopic origin of ferromagnetism in Fe silicides/ I. S. Sandalov [и др.].
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Tarasov A. S., Varnakov S. N., Bondarev I. A., Volochaev M. N., Lukyanenko A. V., Volkov N. V.
Заглавие : Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.29 (Шифр В37/H99-812624296)
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Aleksandrovsky A. S., Kosyrev N. N., Yakovlev I. A., Molokeev M. S., Lukyanenko A. V., Krylov A. S., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [16-13-00060]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440. - P.144-152. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.084. - ISSN 1873-4766(eISSN)
Примечания : Cited References:39. - This work was supported by the Russian Science Foundation, project no. 16-13-00060
Предметные рубрики: SEMICONDUCTING FESI2 FILMS
SPECTROSCOPIC ELLIPSOMETRY
EPITAXIAL-FILMS
Ключевые слова (''Своб.индексиров.''): β-fesi2 iron disilicide--optical properties--reflection high-energy--electron diffraction--raman spectroscopy--ab initio calculation
Аннотация: This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition (~ 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of ~0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of ~0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.
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