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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Structural phase transformations during a solid-state reaction in a bilayer Al/Fe thin-film nanosystem
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 1. - P.200-205. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783420010059
Примечания : Cited References: 36. - This study was supported by the Russian Foundation for Basic Research, project no. 18-03-01173a
Аннотация: The processes of phase formation during a solid-state reaction between Fe and Al nanolayers have been investigated by the in situ electron diffraction method. It is established that the solid-state reaction at the interface between iron and aluminum nanolayers begins at ≈100°C with the formation of a disordered Al solid solution in α-Fe. It is shown that intermetallic phases (FeAl6 and/or Fe2Al5, FeAl, and Fe3Al) are successively formed upon further heating.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Жарков, Сергей Михайлович, Алтунин, Роман Русланович, Моисеенко, Евгений Тимофеевич
Заглавие : Твердофазная реакция в тонкопленочной системе Al/Ag
Коллективы : Научный совет по электронной микроскопии РАН, Федеральный научно-исследовательский центр "Кристаллография и фотоника" РАН, Институт проблем технологии микроэлектроники и особочистых материалов РАН, "Курчатовский институт", научно-исследовательский центр, Российская конференция по электронной микроскопии (28; 2020 ; 5-10 сент.; Черноголовка, Московская обл.), Школа молодых ученых (6; 2020 ; 5-10 сент.; Черноголовка, Московская обл.)
Место публикации : XXVIII Российская конференция по электронной микроскопии (РКЭМ-2020): сб. тез. докладов : в 3-х т. - 2020. - Т. 2. - P.228-229. - ISBN 978-5-6045073-2-2, DOI 10.37795/RCEM.2020.82.12.017
Примечания : Библиогр.: 1
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Moiseenko E. T., Yumashev V. V., Altunin R. R., Solovyov L. A., Volochaev M. N., Belousov O. V., Zharkov S. M.
Заглавие : Thermokinetic study of intermetallic phase formation in an Al/Cu multilayer thin film system
Место публикации : Materialia. - 2023. - Vol. 28. - Ст.101747. - ISSN 25891529 (eISSN), DOI 10.1016/j.mtla.2023.101747
Примечания : Cited References: 53. - This work was supported by the Russian Science Foundation under grant # 22-13-00313
Аннотация: The solid-state reaction process in a multilayer thin film system (Al/Cu)50 has experimentally been studied using the methods of simultaneous thermal analysis (STA) and in situ electron diffraction. A detailed kinetic analysis of the phase formation processes during the solid-state reaction has shown that the observed solid-state transformations can be described by a statistically significant kinetic model where each stage corresponds to the reaction of the n-th order with autocatalysis. The low-temperature stage has been demonstrated to be attributable to the formation of the θ-Al2Cu phase, with the medium-temperature and high-temperature ones corresponding to the α2-AlCu3 and γ1-Al4Cu9 phases, respectively. The kinetic parameters for the formation of the phases θ-Al2Cu, α2-AlCu3 and γ1-Al4Cu9 have been determined. It has been shown that the kinetic model describing the solid-state reaction in the Al–Cu multilayer thin film system is in best agreement with the experimental data in the case of a competition between the formation stages of the α2-AlCu3 and γ1-Al4Cu9 phases.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zharkov S. M., Altunin R. R., Moiseenko E. T.
Заглавие : Solid-state reactions in Al based multilayer nanosystems
Коллективы : International symposium on self-propagating high temperature synthesis
Место публикации : International symposium on self-propagating high temperature synthesis (15 ; 2019 ; Sept. ; 16-20 ; Moscow). XV International symposium on self-propagating high temperature synthesis (SHS-2019): book of abstracts. - 2019. - P.561-562. - ISBN 978-5-6040595-4-8, DOI 10.24411/9999-0014A-2019-10204
Примечания : Самораспространяющийся высокотемпературный синтез (загл. конф.)
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Moiseenko E. T., Altunin R. R., Zharkov S. M.
Заглавие : In situ electron diffraction and resistivity characterization of solid state reaction process in Cu/Al bilayer thin films
Место публикации : Metall. Mat. Trans. A. - 2020. - Vol. 51, Is. 3. - P.1428-1436. - ISSN 10735623 (ISSN), DOI 10.1007/s11661-019-05602-5
Примечания : Cited References: 52. - The authors wish to thank the financial support from the Russian Science Foundation (Grant #18-13-00080)
Аннотация: Solid state reaction processes in Cu/Al thin films have been studied using the methods of in situ electron diffraction and electrical resistivity measurements. The solid state reaction in the Cu/Al thin films has been found to begin already at 88 °C with the formation of the Al2Cu phase in the process of thermal heating in vacuum. The phase sequence at the solid state reaction in the films under study has been determined to be the following: Al2Cu → AlCu → Al4Cu9. A model has been suggested for describing the initial formation stage of intermetallic compounds at the solid state reaction in Cu/Al thin films. According to this model, at the initial stage, the intermetallic compounds are formed as separate crystallites at the interface in the Cu/Al thin films. The suggested model can be applied both to the formation of the first phase, Al2Cu, and to the subsequent phases: AlCu and Al4Cu9. For the Al4Cu9 phase the temperature coefficient of the electrical resistivity has been determined to be equal to αAl4Cu9= 1.1 × 10−3 K−1.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Moiseenko E. T., Zharkov S. M., Altunin R. R., Belousov O. V., Solovyov L. A., Yumashev V. V., Volochaev M. N., Zeer G. M.
Заглавие : Peculiarities of Intermetallic Phase Formation in the Process of a Solid State Reaction in (Al/Cu)n Multilayer Thin Films
Место публикации : JOM. - 2021. - Vol. 73, Is. 2. - P.580-588. - ISSN 10474838 (ISSN), DOI 10.1007/s11837-020-04522-9
Примечания : Cited References: 44. - This work was supported by the Russian Science Foundation under Grant #18-13-00080. The electron microscopy investigations were conducted in the SFU Joint Scientific Center whose infrastructure was supported by the State assignment (#FSRZ-2020-0011) of the Ministry of Science and Higher Education of the Russian Federation. The preparation of cross-section samples for TEM investigations was conducted in the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS”
Аннотация: Phase formation in a solid state reaction in Al/Cu bilayer and multilayer thin films was studied by the methods of in situ transmission electron microscopy, electron diffraction, simultaneous thermal analysis and x-ray diffraction. It was established that the phase formation sequences in the (Al/Cu)n (n = 2, 15) multilayer thin films (θ-Al2Cu → γ1-Al4Cu9 → η2-AlCu) and Al/Cu bilayer thin films (θ-Al2Cu → η2-AlCu → γ1-Al4Cu9) were different. It was assumed that the phase formation process in the thin films was strongly affected by a number of copper/aluminum interfaces due to the changes of aluminum and copper diffusion current.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Жарков, Сергей Михайлович, Алтунин, Роман Русланович, Моисеенко, Евгений Тимофеевич, Юмашев, Владимир Витальевич
Заглавие : Кинетика фазообразования при твердофазной реакции в многослойных тонкопленочных наносистемах Al/Cu
Коллективы : Научный совет по электронной микроскопии РАН, Федеральный научно-исследовательский центр "Кристаллография и фотоника" РАН, Российская конференция по электронной микроскопии "Современные методы электронной, зондовой микроскопии и комплементарных методов исследованиях наноструктур и наноматериалов" (29; 2022 ; 29-31 авг.; Москва)
Место публикации : XXIX Российская конференция по электронной микроскопии (РКЭМ-2022): сб. тез. докладов. - 2022. - P.279
Примечания : Библиогр.: 1. - Работа выполнена при финансовой поддержке Российского научного фонда (грант № 22-13-00313)
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zharkov S. M., Altunin R. R., Moiseenko E. T., Varnakov S. N., Yakovlev I. A., Tarasov I. A., Ovchinnikov S. G.
Заглавие : In-situ transmission electron microscopy and electron diffraction investigations of solid-state reactions in Fe3 Si(111)/Si(111) films
Коллективы : International symposium on self-propagating high temperature synthesis
Место публикации : Int. Symp. on Self-propag. High-Temp. Synth. SHS XIII: Oct. 12-15, 2015, Antalya / Türkiye. - 2015. - Ст.Abstract:1139. - P.81
Примечания : The work was partly supported by the Russian Foundation for Basic Research (grants ## 13-02-01265a, 140300515a) and the Ministry of Education and Science of the Russian Federation (grant #2014/71/1763 in the framework of the state assignment for Siberian Federal University for 2014-2016)
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Moiseenko E. T., Yumashev V. V., Altunin R. R., Zeer G. M., Nikolaeva N. S., Belousov O. V., Zharkov S. M.
Заглавие : Solid-state reaction in Cu/a-Si nanolayers: A comparative study of STA and electron diffraction data
Место публикации : Materials. - 2022. - Vol. 15, Is. 23. - Ст.8457. - ISSN 19961944 (eISSN), DOI 10.3390/ma15238457
Примечания : Cited References: 45. - This work was supported by the Russian Science Foundation under grant # 22-13-00313
Аннотация: The kinetics of the solid-state reaction between nanolayers of polycrystalline copper and amorphous silicon (a-Si) has been studied in a Cu/a-Si thin-film system by the methods of electron diffraction and simultaneous thermal analysis (STA), including the methods of differential scanning calorimetry (DSC) and thermogravimetry (TG). It has been established that, in the solid-state reaction, two phases are formed in a sequence: Cu + Si → η″-Cu3Si → γ-Cu5Si. It has been shown that the estimated values of the kinetic parameters of the formation processes for the phases η″-Cu3Si and γ-Cu5Si, obtained using electron diffraction, are in good agreement with those obtained by DSC. The formation enthalpy of the phases η″-Cu3Si and γ-Cu5Si has been estimated to be: ΔHη″-Cu3Si = −12.4 ± 0.2 kJ/mol; ΔHγ-Cu5Si = −8.4 ± 0.4 kJ/mol. As a result of the model description of the thermo-analytical data, it has been found that the process of solid-state transformations in the Cu/a-Si thin-film system under study is best described by a four-stage kinetic model R3 → R3 → (Cn-X) → (Cn-X). The kinetic parameters of formation of the η″-Cu3Si phase are the following: Ea = 199.9 kJ/mol, log(A, s−1) = 20.5, n = 1.7; and for the γ-Cu5Si phase: Ea = 149.7 kJ/mol, log(A, s−1) = 10.4, n = 1.3, with the kinetic parameters of formation of the γ-Cu5Si phase being determined for the first time.
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