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Co-In2O3 nanocomposite films: Synthesis and structural and magnetic properties / L. E. Bykova [et al.] // Phys. Solid State. - 2018. - Vol. 60, Is. 10. - P. 2072-2077, DOI 10.1134/S1063783418100049. - Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, project no. 16-03-00069 and, in part, by the Grant Council of the President of the Russian Federation, project no. SP-1373.2016.3 and the Russian Foundation for Basic Research and the Government of the Krasnoyarsk Territory, project no. 18-42-243009r_mol_a. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
FE-IN2O3 THIN-FILMS
THERMITE SYNTHESIS
Аннотация: The structural and magnetic properties of granular Co–In2O3 nanocomposite films formed by vacuum annealing of In/Co3O4 film bilayers at a temperature of 550°C have been investigated. The synthesized Co–In2O3 films contain ferromagnetic cobalt nanoclusters with an average size of 60 nm and a magnetization of ~340 emu/cm3 surrounded by the In2O3 layer and exhibit the thermally activated conductivity.

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Публикация на русском языке Нанокомпозитные пленки Co-In2O3: синтез, структурные и магнитные свойства [Текст] / Л. Е. Быкова [и др.] // Физ. тверд. тела. - 2018. - Т. 60 Вып. 10. - С. 2028–2032

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 630090, Russia.
Siberian Univ Sci & Technol, Krasnoyarsk 630014, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 630090, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Matsynin, A. A.; Мацынин, Алексей Александрович; Bondarenko, G. N.; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic Research [16-03-00069, 18-42-243009r_mol_a]; Grant Council of the President of the Russian Federation [SP-1373.2016.3]; Government of the Krasnoyarsk Territory [18-42-243009r_mol_a]
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CoPt-Al2O3 nanocomposite films: synthesis, structure, and magnetic properties / V. S. Zhigalov, L. E. Bykova, V. G. Myagkov [et al.] // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 1. - P. 47-53, DOI 10.1134/S102745102001022X. - Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects no. 18-42-243009 r_mol_a and no. 19-43-240003 r_a, and the Foundation for Assistance to Small Innovative Enterprises in Science and Technology, contract no. 11843GU/2017, code 0033636, U.M.N.I.K. competition. . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   GRANULAR THIN-FILMS
   THERMITE SYNTHESIS
   PHASE
Кл.слова (ненормированные):
thin films -- ferromagnetic nanocomposites -- CoPt alloy -- magnetic anisotropy
Аннотация: The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H ˃ Hc).

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Публикация на русском языке Нанокомпозитные пленки CoPt–Al2O3: синтез, структурные и магнитные свойства [Текст] / В. С. Жигалов, Л. Е. Быкова, В. Г. Мягков [и др.] // Поверхность. - 2020. - № 1. - С. 60-67

Держатели документа:
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Myagkov, V. G.; Мягков, Виктор Григорьевич; Pavlova, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Matsynin, A. A.; Мацынин, Алексей Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-243009 r_mol_a, 19-43-240003 r_a]; Foundation for Assistance to Small Innovative Enterprises in Science and Technology [11843GU/2017, 0033636]
}
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Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation / I. A. Tambasov [et al.] // Semiconductors. - 2014. - Vol. 48, Is. 2. - P. 207-211, DOI 10.1134/S1063782614020286. - Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
GAS SENSOR RESPONSE
   INDIUM OXIDE-FILMS
   THIN-FILMS
   HIGH-PERFORMANCE
   TIN OXIDE
   TRANSPARENT CONDUCTORS
   SUBSTRATE-TEMPERATURE
   ROOM-TEMPERATURE
   TRANSISTORS
   PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.

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Публикация на русском языке Влияние фотооблучения и температуры на электрические и оптические свойства пленок In2O3, полученных автоволновым окислением [Текст] / И. А. Тамбасов [и др.] // Физ. и техника полупроводников : Санкт-Петербургская издательская фирма "Наука" РАН, 2014. - Т. 48 Вып. 2. - С. 220-224

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660037, Russia
Joint Stock Co Academician MF Reshetnev Informat, Zheleznogorsk 662972, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Yozhikova, E. V.; Maksimov, I. A.; Ivanov, V. V.; Ministry of Education and Science of the Russian Federation [14.513.11.0023]
}
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Electron-microscopy and mossbauer study of superlattices in iron films / G. I. Frolov, O. A. Bayukov, V. S. Zhigalov [et al.] // JETP Letters. - 1995. - Vol. 61, Is. 1. - P. 63-67. - Cited References: 6 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary

WOS
Доп.точки доступа:
Frolov, G. I.; Фролов, Георгий Иванович; Bayukov, O. A.; Баюков, Олег Артемьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Kveglis, L. I.; Квеглис, Людмила Иосифовна; Myagkov, V. G.; Мягков, Виктор Григорьевич
}
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Features of the course of the solid-state reactions in a Sn/Fe/Cu trilayer film system / Yu. Yu. Balashov, V. G. Myagkov, L. E. Bykova [et al.] // Tech. Phys. - 2023. - Vol. 68, Is. 7. - P. 940-944, DOI 10.61011/TP.2023.07.56642.73-23. - Cited References: 18 . - ISSN 1063-7842. - ISSN 1090-6525
Кл.слова (ненормированные):
thin films -- transmission electron microscopy -- energy dispersion spectroscopy -- mass transfer mechanisms
Аннотация: Study of the mechanisms of the solid-state reactions in Sn/Fe/Cu thin films is interesting both from a fundamental point of view and from a view of the importance of emerging intermetallics in the technology of solder joints and thin-film lithium-ion batteries. By the integrated approach, including both X-ray phase analysis and local elemental analysis of the cross-sections of the films, the phase composition and the mutual arrangement of phases were studied, at various stages of the solid-state reaction occurring at different temperatures. The observed sequence of the appearing phases differs significantly from the expected one if the mass transfer took place by a volume diffusion through the forming layers.

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Публикация на русском языке Особенности протекания твердофазных реакций в трехслойной пленочной системе Sn/Fe/Cu [Текст] / Ю. Ю. Балашов, В. Г. Мягков, Л. Е. Быкова [и др.]. - 5 с. // Журн. техн. физ. - 2023. - Т. 93 Вып. 7. - С. 1009-1013

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Siberian State University, Krasnoyarsk, Russia

Доп.точки доступа:
Balashov, Yu. Yu.; Балашов, Юрий Юрьевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Galushka, K. A.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Nanophysics & Nanoelectronics, International Symposium(27 ; 13-16 March 2023 ; Nizhny Novgorod, Russia)
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Formation of Cu6Sn5 intermetallic in Cu/Sn thin films / L. E. Bykova, S. M. Zharkov, V. G. Myagkov [et al.] // Phys. Solid State. - 2022. - Vol. 64, Is. 14. - P. 2414-2418, DOI 10.21883/PSS.2022.14.54350.139. - Cited References: 16. - This research was supported financially by the Russian Foundation for Basic Research (grant No. 19-43-240003). Electron microscopic studies were carried out at the Krasnoyarsk Regional Research Equipment Sharing Center of the Federal Research Center Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences and the Electron Microscopy Laboratory of the Research Equipment Sharing Center of the Siberian Federal University, supported under the state assignment of the Ministry of Science and Higher Education of the Russian Federation (scientific topic code FSRZ-2020-0011) . - ISSN 1063-7834. - ISSN 1090-6460
Кл.слова (ненормированные):
thin films -- Cu6Sn5 intermetallic compound -- transmission electron microscopy -- electron diffraction
Аннотация: The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55 nm)/Cu(30 nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300oC and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.

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Публикация на русском языке Формирование интерметаллида Cu6Sn5 в тонких пленках Cu/Sn [Текст] / Л. Е. Быкова, С. М. Жарков, В. Г. Мягков [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 12. - С. 2205-2209

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Bykova, L. E.; Быкова, Людмила Евгеньевна; Zharkov, S. M.; Жарков, Сергей Михайлович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Balashov, Yu. Yu.; Балашов, Юрий Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович
}
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Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films / V. G. Myagkov [et al.] // Thin Solid Films. - 2014. - Vol. 552. - P. 86-91, DOI 10.1016/j.tsf.2013.12.029. - Cited References: 53 . - ISSN 0040-6090

РУБ Materials Science, Multidisciplinary + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
PHASE-FORMATION
   MAGNETIC-PROPERTIES
   Mn5Ge3 FILMS
   X-RAY
   Ge(111)
   TRANSFORMATIONS
   DIFFUSION
   SPECTRA
   SYSTEM
   LAYERS
Кл.слова (ненормированные):
Manganite-germanium -- Solid state reaction -- First phase -- Mn5Ge3 alloy -- Carbon impurity -- Oxygen impurity -- Annealing -- Magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Y. L.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Yurkin, G. Yu.; Юркин, Глеб Юрьевич
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    Formation of ferromagnetic Mn5Ge3 phase in Ge/Ag/Mn trilayers / A. A. Matsynin [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P10.13. - P. 481. - References: 2. - This study was supported by the RFBR (Grants 15-02-00948-A, 16-03-00069 А), and by the program UMNIK-2015 №0011727 . - ISBN 978-5-904603-06-9
   Перевод заглавия: Формирование ферромагнитной фазы Mn5Ge3 в Ge/Ag/Mn твехслойных пленках
Кл.слова (ненормированные):
diluted magnetic semiconductor -- spintronics -- ferromagnetic Mn5Ge3 -- thin-film solid-state reaction

Доп.точки доступа:
Matsynin, A. A.; Мацынин, Алексей Александрович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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Formation of NiAl shape memory alloy thin films by a solid-state reaction / V. G. Myagkov [et al.] // Solid State Phenomena. - 2008. - Т. 138, № . - P377-384, DOI 10.4028/www.scientific.net/SSP.138.377 . - ISSN 1662-9779

ГРНТИ

29.19

РИНЦ
Держатели документа:
Institute of Chemistry and Technology SB RAS
L.V. Kirensky Institute of Physics SB RAS
Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zharkov, S. M.; Жарков, Сергей Михайлович; Bondarenko, G. N.
}
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10.

Formation of the Cu6Sn5 intermetallics in Cu/Sn thin films / L. E. Bykova, S. M. Zharkov, V. G. Myagkov [et al.] // Phys. Solid State. - 2022. - Vol. 64, Is. 2. - P. 33-37, DOI 10.1134/S1063783422010048. - Cited References: 16. - The study was supported by the Russian Foundation for Basic Research, project no. 19-43-240003. The electron microscopy study was carried out at the Krasnoyarsk Regional Center for Collective Use of the Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences and at the Laboratory of Electron Microscopy of the Center for Collective Use of the Siberian Federal University within the state assignment of the Ministry of Science and Higher Education of the Russian Federation, research theme code FSRZ-2020-0011 . - ISSN 1063-7834
Кл.слова (ненормированные):
thin films -- Cu6Sn5 intermetallic -- transmission electron microscopy -- electron diffraction
Аннотация: The formation of the Cu6Sn5 intermetallic in Sn(55nm)/Cu(30nm) thin-film bilayers has been studied upon heating the film sample from room temperature to 300°C directly in a column of a transmission electron microscope in the electron diffraction mode with recording electron diffraction patterns. The thin films synthesized by the solid-state reaction have been found to be single-phase and consist of the η-Cu6Sn5 hexagonal phase (95‒260°C). It has been suggested basing on the effective interdiffusion coefficient (5 × 10‒16 m2/s) estimated in the course of the reaction that the main mechanism of the formation of the Cu6Sn5 thin films is diffusion along grain boundaries and dislocations.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Bykova, L. E.; Быкова, Людмила Евгеньевна; Zharkov, S. M.; Жарков, Сергей Михайлович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Balashov, Yu. Yu.; Балашов, Юрий Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович
}
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