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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykova L. E., Zhigalov V. S., Myagkov V. G., Volochaev M. N., Matsynin A. A., Bondarenko G. N., Patrin G. S.
Заглавие : Co-In2O3 nanocomposite films: Synthesis and structural and magnetic properties
Коллективы : Russian Foundation for Basic Research [16-03-00069, 18-42-243009r_mol_a]; Grant Council of the President of the Russian Federation [SP-1373.2016.3]; Government of the Krasnoyarsk Territory [18-42-243009r_mol_a]
Место публикации : Phys. Solid State. - 2018. - Vol. 60, Is. 10. - P.2072-2077. - ISSN 1063-7834, DOI 10.1134/S1063783418100049. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, project no. 16-03-00069 and, in part, by the Grant Council of the President of the Russian Federation, project no. SP-1373.2016.3 and the Russian Foundation for Basic Research and the Government of the Krasnoyarsk Territory, project no. 18-42-243009r_mol_a.
Предметные рубрики: SOLID-STATE SYNTHESIS
FE-IN2O3 THIN-FILMS
THERMITE SYNTHESIS
Аннотация: The structural and magnetic properties of granular Co–In2O3 nanocomposite films formed by vacuum annealing of In/Co3O4 film bilayers at a temperature of 550°C have been investigated. The synthesized Co–In2O3 films contain ferromagnetic cobalt nanoclusters with an average size of 60 nm and a magnetization of ~340 emu/cm3 surrounded by the In2O3 layer and exhibit the thermally activated conductivity.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhigalov V. S., Bykova L. E., Myagkov V. G., Pavlova A. N., Volochaev M. N., Matsynin A. A., Patrin G. S.
Заглавие : CoPt-Al2O3 nanocomposite films: synthesis, structure, and magnetic properties
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-243009 r_mol_a, 19-43-240003 r_a]; Foundation for Assistance to Small Innovative Enterprises in Science and Technology [11843GU/2017, 0033636]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 1. - P.47-53. - ISSN 1027-4510, DOI 10.1134/S102745102001022X. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects no. 18-42-243009 r_mol_a and no. 19-43-240003 r_a, and the Foundation for Assistance to Small Innovative Enterprises in Science and Technology, contract no. 11843GU/2017, code 0033636, U.M.N.I.K. competition.
Предметные рубрики: SOLID-STATE SYNTHESIS
GRANULAR THIN-FILMS
THERMITE SYNTHESIS
PHASE
Аннотация: The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H ˃ Hc).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Frolov G. I., Bayukov O. A., Zhigalov V. S., Kveglis L. I., Myagkov V. G.
Заглавие : Electron-microscopy and mossbauer study of superlattices in iron films
Место публикации : JETP Letters. - 1995. - Vol. 61, Is. 1. - P.63-67. - ISSN 0021-3640
Примечания : Cited References: 6
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balashov Yu. Yu., Myagkov V. G., Bykova L. E., Volochaev M. N., Zhigalov V. S., Matsynin A. A., Galushka K. A., Bondarenko G. N., Komogortsev S. V.
Заглавие : Features of the course of the solid-state reactions in a Sn/Fe/Cu trilayer film system
Колич.характеристики :5 с
Коллективы : Nanophysics & Nanoelectronics, International Symposium
Место публикации : Tech. Phys. - 2023. - Vol. 68, Is. 7. - P.940-944. - ISSN 10637842 (ISSN), DOI 10.61011/TP.2023.07.56642.73-23. - ISSN 10906525 (eISSN)
Примечания : Cited References: 18
Аннотация: Study of the mechanisms of the solid-state reactions in Sn/Fe/Cu thin films is interesting both from a fundamental point of view and from a view of the importance of emerging intermetallics in the technology of solder joints and thin-film lithium-ion batteries. By the integrated approach, including both X-ray phase analysis and local elemental analysis of the cross-sections of the films, the phase composition and the mutual arrangement of phases were studied, at various stages of the solid-state reaction occurring at different temperatures. The observed sequence of the appearing phases differs significantly from the expected one if the mass transfer took place by a volume diffusion through the forming layers.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykova L. E., Zharkov S. M., Myagkov V. G., Balashov Yu. Yu., Patrin G. S.
Заглавие : Formation of Cu6Sn5 intermetallic in Cu/Sn thin films
Место публикации : Phys. Solid State. - 2022. - Vol. 64, Is. 14. - P.2414-2418. - ISSN 10637834 (ISSN), DOI 10.21883/PSS.2022.14.54350.139. - ISSN 10906460 (eISSN)
Примечания : Cited References: 16. - This research was supported financially by the Russian Foundation for Basic Research (grant No. 19-43-240003). Electron microscopic studies were carried out at the Krasnoyarsk Regional Research Equipment Sharing Center of the Federal Research Center Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences and the Electron Microscopy Laboratory of the Research Equipment Sharing Center of the Siberian Federal University, supported under the state assignment of the Ministry of Science and Higher Education of the Russian Federation (scientific topic code FSRZ-2020-0011)
Аннотация: The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55 nm)/Cu(30 nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300oC and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Matsynin A. A., Myagkov V. G., Bykova L. E., Zhigalov V. S., Tambasov I. A., Bondarenko G. N.
Заглавие : Formation of ferromagnetic Mn5Ge3 phase in Ge/Ag/Mn trilayers
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P10.13. - P.481. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 2. - This study was supported by the RFBR (Grants 15-02-00948-A, 16-03-00069 А), and by the program UMNIK-2015 №0011727
Ключевые слова (''Своб.индексиров.''): diluted magnetic semiconductor--spintronics--ferromagnetic mn5ge3--thin-film solid-state reaction
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bykova L. E., Zharkov S. M., Bondarenko G. N.
Заглавие : Formation of NiAl shape memory alloy thin films by a solid-state reaction
Место публикации : Solid State Phenomena: Trans Tech Publications Ltd, 2008. - Т. 138, № . - С. 377-384. - ISSN 1662-9779(eissn), DOI 10.4028/www.scientific.net/SSP.138.377
ГРНТИ : 29.19
РИНЦ
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykova L. E., Zharkov S. M., Myagkov V. G., Balashov Yu. Yu., Patrin G. S.
Заглавие : Formation of the Cu6Sn5 intermetallics in Cu/Sn thin films
Место публикации : Phys. Solid State. - 2022. - Vol. 64, Is. 2. - P.33-37. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783422010048
Примечания : Cited References: 16. - The study was supported by the Russian Foundation for Basic Research, project no. 19-43-240003. The electron microscopy study was carried out at the Krasnoyarsk Regional Center for Collective Use of the Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences and at the Laboratory of Electron Microscopy of the Center for Collective Use of the Siberian Federal University within the state assignment of the Ministry of Science and Higher Education of the Russian Federation, research theme code FSRZ-2020-0011
Аннотация: The formation of the Cu6Sn5 intermetallic in Sn(55nm)/Cu(30nm) thin-film bilayers has been studied upon heating the film sample from room temperature to 300°C directly in a column of a transmission electron microscope in the electron diffraction mode with recording electron diffraction patterns. The thin films synthesized by the solid-state reaction have been found to be single-phase and consist of the η-Cu6Sn5 hexagonal phase (95‒260°C). It has been suggested basing on the effective interdiffusion coefficient (5 × 10‒16 m2/s) estimated in the course of the reaction that the main mechanism of the formation of the Cu6Sn5 thin films is diffusion along grain boundaries and dislocations.
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