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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si30 phase and its distinctive features
Коллективы : Nanostructures: Physics and Technology, International Symposium, Институт физики им. Б. И. Степанова НАН Беларуси, Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук, Физико-технический институт им. А.Ф. Иоффе РАН, Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
Место публикации : Nanostructures: physics and technology: proc. 26th Int. symp. - 2018. - P.209-210. - ISBN 978-985-7202-35-5
Примечания : Cited References: 3
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetsova T. V., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.14-15. - ISBN 978-5-904603-08-3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lyashchenko S. A., Popov Z. I., Varnakov S. N., Popov E. A., Molokeev M. S., Yakovlev I. A., Kuzubov A. A., Ovchinnikov S. G., Shamirzaev T. S., Latyshev A. V., Saranin A. A.
Заглавие : Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry
Коллективы : Ministry of Education and Science of the Russian Federation [16.663.2014K, 14.604.21.0002 (RFMEFI60414X0002), 02.G25.31.0043], Russian Foundation for Basic Research [13-02-01265, 14-02-31309]
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 120, Is. 5. - P.886-893. - ISSN 1063, DOI 10.1134/S1063776115050155. - ISSN 10906509(eISSN)
Примечания : Cited References:31. - This study was financially supported by the Ministry of Education and Science of the Russian Federation (state assignment no. 16.663.2014K, agreement no. 14.604.21.0002 (RFMEFI60414X0002), and contract no. 02.G25.31.0043), the Program is Support of Leading Scientific Schools (project no. NSh-2886.2014.2), and the Russian Foundation for Basic Research (project nos. 13-02-01265 and 14-02-31309).
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
FILMS
ELLIPSOMETRY
Аннотация: The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe5Si3 is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe5Si3 and Fe3Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities of electron states (DOS) calculated from first principles for bulk Fe5Si3 and Fe3Si crystals.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Yakovlev I. A., Varnakov S. N., Tarasov A. S.
Заглавие : Anomalous hall effect in an epitaxial Mn5Ge3 thin film on Si(111)
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spintronics and magnetic nanostructures. - Ст.A.P34. - P.163-164. - ISBN 978-5-94469-051-7
Примечания : Cited References: 5. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Kosyrev N. N., Komarov V. A., Yakovlev I. A., Volochaev M. N., Solovyov L. A., Shemukhin A. A., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111)
Место публикации : Thin Solid Films: Elsevier, 2017. - Vol. 642. - P.20-24. - ISSN 00406090 (ISSN), DOI 10.1016/j.tsf.2017.09.025
Примечания : Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2).
Ключевые слова (''Своб.индексиров.''): iron silicides--wet etching--planar structures--moke microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Andryushchenko T. A., Lyashchenko S. A., Varnakov S. N., Lukyanenko A. V., Nemtsev I. V., Yakovlev I. A., Shevtsov D. V., Maximova O. A., Ovchinnikov S. G.
Заглавие : Auger electron spectroscopy of thin Cr2GeC films
Колич.характеристики :7 с
Место публикации : Phys. Met. Metallogr. - 2023. - Vol. 124, Is. 14. - P.1776-1782. - ISSN 0031918X (ISSN), DOI 10.1134/S0031918X2360135X. - ISSN 15556190 (eISSN)
Примечания : Cited References: 33. - The research was supported by the Russian Science Foundation (grant no. 21-12-00226, http://rscf.ru/project/21-12-00226/)
Аннотация: Auger electron spectroscopy was used to determine the phase composition of Cr2GeC MAX phase thin films. A distinctive feature of the formation of carbon-containing MAX phases is the shape of carbon Auger peaks, which is characteristic of metal carbides spectra. Features of the Auger spectra in the presence of secondary phases of chromium germanides are found. Their presence can manifest itself in an increase in the energy of the germanium peaks, which is caused by a chemical shift during the formation of the Cr–Ge bond. Moreover, we have detected the accumulation of electronic charge, which can be explained by the features of the surface morphology.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Tarasov A. S., Lukyanenko A. V., Shanidze L. V., Yakovlev I. A., Volkov N. V.
Заглавие : Biocompatible nanostructures fabricated by Dip-Pen nanolithography
Коллективы : Aptamers in Russia, international conference
Место публикации : Aptamers in Russia, international conference (1 ; 2019 ; Aug. 27-30 ; Krasnoyarsk). Molecular Therapy - Nucleic Acids: book of abstracts of the 1st Int. conf. "Aptamers in Russia 2019". - 2019. - Vol. 17, Suppl. 1. - P.8-9
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Baron F. A., Zelenov F. V., Yakovlev I. A., Volkov N. V.
Заглавие : Biosensors based on nanowire field effect transistors with Schottky contacts
Коллективы : International School and Conference on optoelectronics, photonics, engineering and nanostructures
Место публикации : J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст.012013. - ISSN 1742-6588, DOI 10.1088/1742-6596/1410/1/012013. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies».
Аннотация: A top-down nanofabrication approach was used to obtain silicon nanowires from silicon-on-insulator wafers using direct-write electron beam lithography and plasma-reactive ion etching. Fabricated with designed pattern silicon nanowires are 0.4, 0.8, 2 μm in width and 100 nm in height. The devices can be applied in future medical diagnostic applications as novel biosensors with detection principle based on the changes in electrical characteristics of the silicon nanowires functionalized with thiol-containing molecules.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S.G., Varnakov S.N., Fedorov A.S., Lyaschenko S.A., Yakovlev I.A.
Заглавие : Characterization and magnetic properties of the iron silicides
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Proceedings Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2011)/ Asian School-Conference on Physics and Technology of Nanostructured Materials (2011 ; Aug. ; 22-29 ; Vladivostok, Russia), Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). - 2011
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