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Автор(ы) : Samoshkina Yu. E., Edelman I. S., Chou H., Lin H. -C., Dwivedi G. D., Petrov D. A., Zharkov S. M., Zeer G. M., Molokeev M. S.
Заглавие : Structure and physical properties of hydrogenated (Co + Al)-doped ZnO films: Comparative study with co-doped ZnO films
Место публикации : Mater. Sci. Eng. B. - 2021. - Vol. 264. - Ст.114943. - ISSN 09215107 (ISSN), DOI 10.1016/j.mseb.2020.114943
Примечания : Cited References: 52. - H.C. thanks the Ministry of Science and Technology of Taiwan for financial support [grant number MOST 108-2112-M-110-003]. The scanning electron microscopy investigations were conducted in the SFU Joint Scientific Center supported by Ministry of Science and Higher Education of the Russian Federation [state assignment number FSRZ-2020-0011]. X-ray diffraction data were obtained using analytical equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS”
Аннотация: (Co + Al)-doped ZnO films have been synthesized by the RF magnetron sputtering. Films of this composition have first been obtained in mixed atmosphere of Ar + H2. High hydrogen concentration of 20–50% has been used together with high enough substrate temperature of 450 °C. The used technological conditions affected the morphology, chemical composition, optical, electric, and magnetic properties of the films to an even more than in the case of Co-doped ZnO films synthesized under the same conditions and studied earlier. The films exhibit ferromagnetic behavior at room temperature with much greater magnetization and magneto-optical activity compared to the Co-doped films. At the same time, the hydrogenated films show an increase in electric conductivity in comparison with samples synthesized in the atmosphere of Ar + O2. The magnetic nature of the hydrogenated films has been associated with the defect-related mechanism.
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