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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Изотов, Андрей Викторович, Беляев, Борис Афанасьевич, Соловьев, Платон Николаевич, Волошин, Александр Сергеевич
Заглавие : Микромагнитное моделирование и численный анализ процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик
Место публикации : Изв. вузов. Физика. - 2013. - Т. 56, № 8/2. - С. 230-232
Примечания : Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
Ключевые слова (''Своб.индексиров.''): микромагнитное моделирование--ферромагнетик/антиферромагнетик--петля гистерезиса--обменное смещение--коэрцитивная сила--micromagnetic simulation--coercivity--ferromagnetic/antiferromagnetic--hysteresis loop--exchange bias
Аннотация: На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange bias field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Zotov A. V., Solovev P. N.
Заглавие : Micromagnetic modeling of static and dynamic properties of ferromagnetic/antiferromagnetic bilayer
Коллективы : International Siberian Conference on Control and Communications
Место публикации : Int. Sib. Conf. on Control and Communicat.: Proc.: IEEE, 2013. - Conference code: 102462Cт. 6693573. - ISSN 978-1-4799-1060-1, DOI 10.1109/SIBCON.2013.6693573
Примечания : Cited References: 13
Предметные рубрики: EXCHANGE-BIAS
DEPENDENCE
Ключевые слова (''Своб.индексиров.''): absorption spectrum--exchange bias--micromagnetic modeling
Аннотация: Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange bias field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S.
Заглавие : Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : J. Magn. Magn. Mater.: Elsevier Science BV, 2012. - Vol. 324, Is. 21. - P.3579-3583. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2012.02.095
Примечания : Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15).
Ключевые слова (''Своб.индексиров.''): spintronics--magnetic tunnel junction--high-frequency rectification--photoelectric effect
Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chzhan A. V., Patrin G. S., Kiparisov S. Ya., Seredkin V. A.
Заглавие : Coercivity and exchange bias in magnetic sandwich structure prepared by chemical deposition
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenomena: Selected, peer reviewed papers/ ed.: N. Perov, V. Rodionova. - Stafa-Zurich: Trans Tech Publications, 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P.463-465. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.190.463. - ISSN 978-303785436-5
Примечания : Cited References: 5
Ключевые слова (''Своб.индексиров.''): sandwich structure--exchange bias--coercivity--magnetization reversal
Аннотация: Exchange bias and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Patrin G. S., Turpanov I. A., Marushchenko D. A., Lee L. A., Rudenko T. V.
Заглавие : The investigation of long-range exchange interaction in spin valve structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.489-494. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.489. - ISSN 16629779
Примечания : Cited References: 17
Ключевые слова (''Своб.индексиров.''): exchange bias--exchange interaction--spin valve--thin films
Аннотация: Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Krasikov A. A., Dubrovskii A. A., Semenov S. V., Bayukov O. A., Stolyar S. V., Iskhakov R. S., Ladygina V. P., Ishchenko L. A.
Заглавие : Magnetic properties and the mechanism of formation of the uncompensated magnetic moment of antiferromagnetic ferrihydrite nanoparticles of a bacterial origin
Коллективы : Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences
Место публикации : J. Exp. Theor. Phys.: Pleiades Publishing, 2014. - Vol. 119, Is. 3. - P.479-487. - ISSN 1063-7761, DOI 10.1134/S1063776114080044. - ISSN 1090-6509
Примечания : Cited References: 42. - This work was supported by the Ministry of Education and Science of the Russian Federation (state contract in 2014-2016) and a program of the Siberian Branch of the Russian Academy of Sciences.
Предметные рубрики: NIO NANOPARTICLES
EXCHANGE BIAS
HYSTERESIS ANOMALIES
FERRITIN
SURFACE
MOSSBAUER
ORDER
SIZE
Аннотация: The magnetic properties of the superparamagnetic ferrihydrite nanoparticles that form as a result of the vital activity of Klebsiella oxytoca bacteria are studied. Both an initial powder with an average number of iron atoms N Fe ∼ 2000–2500 in a particle and this powder after annealing at 140°C for 3 h in air are investigated. The following substantial modifications of the magnetic properties of the ferrihydrite nanoparticles are detected after annealing: the superparamagnetic blocking temperature increases from 23 to 49.5 K, and the average magnetic moment of a particle increases (as follows from the results of processing of magnetization curves). The particles have antiferromagnetic ordering, and the magnetic moment resulting in the superparamagnetism of the system appears due to random spin decompensation inside the particle. For this mechanism, the number of uncompensated spins is proportional to the number of magnetically active atoms raised to the one-half power, and this relation holds true for the samples under study at a good accuracy. The possible causes of the detected shift of magnetic hysteresis loops at low temperatures upon field cooling are discussed.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Burkov S. I., Zolotova O. P., Turchin P. P., Sorokin B. P., Aleksandrov K. S.
Заглавие : Calculation of thermostable directions and the influence of bias electricfield on the propagation of the Lamb and SH waves in langasite single crystalplates
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст.5935458. - P.1853-1856. - ISBN 1051, DOI 10.1109/ULTSYM.2010.5935458. - ISBN 9781457703829
Ключевые слова (''Своб.индексиров.''): dc electric field influence--lamb wave--sh-wave--thermostability--bias electric fields--dc electric field--lamb wave--langasite crystals--langasites--sh wave--single-crystal plates--temperature coefficient--thermostability--computer simulation--electromechanical coupling--shear waves--single crystals--ultrasonics--electric fields--electric fields--shear waves
Аннотация: Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.
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