Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (1)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=Bias<.>)

Общее количество найденных документов : 47
Показаны документы с 1 по 20

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Изотов, Андрей Викторович, Беляев, Борис Афанасьевич, Соловьев, Платон Николаевич, Волошин, Александр Сергеевич
Заглавие : Микромагнитное моделирование и численный анализ процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик
Место публикации : Изв. вузов. Физика. - 2013. - Т. 56, № 8/2. - С. 230-232
Примечания : Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
Ключевые слова (''Своб.индексиров.''): микромагнитное моделирование--ферромагнетик/антиферромагнетик--петля гистерезиса--обменное смещение--коэрцитивная сила--micromagnetic simulation--coercivity--ferromagnetic/antiferromagnetic--hysteresis loop--exchange bias
Аннотация: На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange bias field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Zotov A. V., Solovev P. N.
Заглавие : Micromagnetic modeling of static and dynamic properties of ferromagnetic/antiferromagnetic bilayer
Коллективы : International Siberian Conference on Control and Communications
Место публикации : Int. Sib. Conf. on Control and Communicat.: Proc.: IEEE, 2013. - Conference code: 102462Cт. 6693573. - ISSN 978-1-4799-1060-1, DOI 10.1109/SIBCON.2013.6693573
Примечания : Cited References: 13
Предметные рубрики: EXCHANGE-BIAS
DEPENDENCE
Ключевые слова (''Своб.индексиров.''): absorption spectrum--exchange bias--micromagnetic modeling
Аннотация: Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange bias field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.
WOS,
Смотреть статью,
Материалы конференции,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S.
Заглавие : Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : J. Magn. Magn. Mater.: Elsevier Science BV, 2012. - Vol. 324, Is. 21. - P.3579-3583. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2012.02.095
Примечания : Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15).
Ключевые слова (''Своб.индексиров.''): spintronics--magnetic tunnel junction--high-frequency rectification--photoelectric effect
Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.
Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chzhan A. V., Patrin G. S., Kiparisov S. Ya., Seredkin V. A.
Заглавие : Coercivity and exchange bias in magnetic sandwich structure prepared by chemical deposition
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenomena: Selected, peer reviewed papers/ ed.: N. Perov, V. Rodionova. - Stafa-Zurich: Trans Tech Publications, 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P.463-465. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.190.463. - ISSN 978-303785436-5
Примечания : Cited References: 5
Ключевые слова (''Своб.индексиров.''): sandwich structure--exchange bias--coercivity--magnetization reversal
Аннотация: Exchange bias and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.
Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Patrin G. S., Turpanov I. A., Marushchenko D. A., Lee L. A., Rudenko T. V.
Заглавие : The investigation of long-range exchange interaction in spin valve structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.489-494. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.489. - ISSN 16629779
Примечания : Cited References: 17
Ключевые слова (''Своб.индексиров.''): exchange bias--exchange interaction--spin valve--thin films
Аннотация: Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Krasikov A. A., Dubrovskii A. A., Semenov S. V., Bayukov O. A., Stolyar S. V., Iskhakov R. S., Ladygina V. P., Ishchenko L. A.
Заглавие : Magnetic properties and the mechanism of formation of the uncompensated magnetic moment of antiferromagnetic ferrihydrite nanoparticles of a bacterial origin
Коллективы : Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences
Место публикации : J. Exp. Theor. Phys.: Pleiades Publishing, 2014. - Vol. 119, Is. 3. - P.479-487. - ISSN 1063-7761, DOI 10.1134/S1063776114080044. - ISSN 1090-6509
Примечания : Cited References: 42. - This work was supported by the Ministry of Education and Science of the Russian Federation (state contract in 2014-2016) and a program of the Siberian Branch of the Russian Academy of Sciences.
Предметные рубрики: NIO NANOPARTICLES
EXCHANGE BIAS
HYSTERESIS ANOMALIES
FERRITIN
SURFACE
MOSSBAUER
ORDER
SIZE
Аннотация: The magnetic properties of the superparamagnetic ferrihydrite nanoparticles that form as a result of the vital activity of Klebsiella oxytoca bacteria are studied. Both an initial powder with an average number of iron atoms N Fe ∼ 2000–2500 in a particle and this powder after annealing at 140°C for 3 h in air are investigated. The following substantial modifications of the magnetic properties of the ferrihydrite nanoparticles are detected after annealing: the superparamagnetic blocking temperature increases from 23 to 49.5 K, and the average magnetic moment of a particle increases (as follows from the results of processing of magnetization curves). The particles have antiferromagnetic ordering, and the magnetic moment resulting in the superparamagnetism of the system appears due to random spin decompensation inside the particle. For this mechanism, the number of uncompensated spins is proportional to the number of magnetically active atoms raised to the one-half power, and this relation holds true for the samples under study at a good accuracy. The possible causes of the detected shift of magnetic hysteresis loops at low temperatures upon field cooling are discussed.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Burkov S. I., Zolotova O. P., Turchin P. P., Sorokin B. P., Aleksandrov K. S.
Заглавие : Calculation of thermostable directions and the influence of bias electricfield on the propagation of the Lamb and SH waves in langasite single crystalplates
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст.5935458. - P.1853-1856. - ISBN 1051, DOI 10.1109/ULTSYM.2010.5935458. - ISBN 9781457703829
Ключевые слова (''Своб.индексиров.''): dc electric field influence--lamb wave--sh-wave--thermostability--bias electric fields--dc electric field--lamb wave--langasite crystals--langasites--sh wave--single-crystal plates--temperature coefficient--thermostability--computer simulation--electromechanical coupling--shear waves--single crystals--ultrasonics--electric fields--electric fields--shear waves
Аннотация: Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.
Scopus,
Читать в сети ИФ
Найти похожие

11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Burkov S. I., Sorokin B. P., Karpovich A. A., Aleksandrov K. S.
Заглавие : Reflection and refraction of bulk acoustic waves in piezoelectric crystals under the action of bias electric field and uniaxial pressure
Коллективы : IEEE International ultrasonics symposium
Место публикации : Proceedings - IEEE Ultrasonics Symposium. - 2008. - Ст.4803254. - P.2161-2164. - ISBN 1051-0117, DOI 10.1109/ULTSYM.2008.0535
Ключевые слова (''Своб.индексиров.''): bias electric field--bulk elastic wave--mechanical stress--piezoelectric crystal--reflection--refraction--bias electric field--bulk acoustic waves--bulk elastic wave--mechanical stress--piezoelectric crystal--piezoelectric crystals--uniaxial pressures--acoustic wave reflection--acoustics--crystals--elastic waves--elasticity--electric field measurement--electric fields--piezoelectric materials--piezoelectric transducers--piezoelectricity--refraction--soil structure interactions--stresses
Аннотация: Main theory results concerned with bulk elastic wave reflection/refraction on the boundary between two piezoelectric crystals subjected to the action of bias electric field or mechanical stress have presented. Some calculations for LiNbO3 and Bi12GeO20 crystals have made. В©2008 IEEE.
Scopus,
Читать в сети ИФ
Найти похожие

12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aleksandrov K. S., Turchin P. P., Sorokin B. P., Burkov S. I.
Заглавие : Nonlinear electromechanical nronerties and acoustic waves propagation in la3Ga5SiO14 single crystals under the.bias static fields
Место публикации : Izv RAN Ser Fiz. - 1996. - Vol. 60, Is. 10. - P.103-105. - ISSN 0367-6765
Scopus
Найти похожие

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Edelman I. S., Ivanova O. S., Petrakovskaja E. A., Velikanov D. A., Tarasov I. A., Zubavichus Y. V., Trofimova N. N., Zaikovskii V. I.
Заглавие : Formation, characterization and magnetic properties of maghemite γ-Fe2O3 nanoparticles in borate glasses
Коллективы : Russian Foundation for Basic Research - Russia [14-02-01211-a]; President of Russia [NSh-2886.2014.2]; Russian Ministry of Science and Education [RFMEFI61914X0002]
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 624. - P.60-67. - ISSN 0925-8388, DOI 10.1016/j.jallcom.2014.11.059
Примечания : Cited References: 25. - This work was supported partly by the Russian Foundation for Basic Research - Russia, Grant No. 14-02-01211-a and by the President of Russia Grant No. NSh-2886.2014.2. This work was performed using the equipment of Unique Scientific Facility "Kurchatov Synchrotron Radiation Source'' supported by the Russian Ministry of Science and Education (project code RFMEFI61914X0002).
Предметные рубрики: SUPERPARAMAGNETIC RESONANCE
HYSTERESIS LOOPS
EXCHANGE BIAS
IONS
MATRIX
Ключевые слова (''Своб.индексиров.''): nanostructures--crystal structure and symmetry--magnetic measurements
Аннотация: A new type of nanocomposite materials based on maghemite, γ-Fe2O3, nanoparticles dispersed in borate glasses co-doped with low contents of iron together with the larger radius element combinations: Y and Bi, or Sm and Pb, or Y and Pb is studied. Nanoparticles arise as a result of heat treatment of the glasses which gives them properties characteristic of magnetically ordered substances. Transmission electron microscopy and XRD show that only one magnetic phase, namely γ-Fe2O3 nanoparticles, occurs in glasses subjected to the thermal treatment at 540 °C during 24 h independently on the doping element nature. At the same time doping element and their concentrations ratio in every combination affect the particles average size and glass magnetic properties, such as magnetization temperature dependences, Faraday rotation value and electron magnetic resonance spectrum characteristics.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism , Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156], Presidium of the Russian Academy of Sciences [20.8], Ministry of Education and Science of the Russian Federation [02.G25.31.0043]
Место публикации : J. Magn. Magn. Mater./ Moscow International Symposium on Magnetism (6th ; Moscow) (29 June – 3 July 2014): Elsevier Science, 2015. - Vol. 383. - P.69-72. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.11.014
Примечания : Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043.
Предметные рубрики: SILICON
SPINTRONICS
FIELD
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--magnetoresistance--magnetoimpedance--photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ,
Читать в сети ИФ
Найти похожие

15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled AC and DC magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст.1RP-A-10. - P.315. - ISBN 978-5-91978-025-0
Материалы конференции,
Читать в сети ИФ
Найти похожие

16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Gustaitsev A. O., Volkov N. V.
Заглавие : Bias-controlled magnetoimpedance effect in a mis structure
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): Book of abstracts. - 2014. - Ст.1PO-K-8. - P.541. - ISBN 978-5-91978-025-0
Материалы конференции,
Читать в сети ИФ
Найти похожие

17.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Rautskii M. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Giant magnetotransport effects driven by bias and optical irradiation in silicon-based hybrid structures
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир, центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.36
Примечания : Библиогр.: 4 назв.
Материалы конференции
Найти похожие

18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Baron F. A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device
Место публикации : J. Surf. Invest.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 9, Is. 5. - P.984-994. - ISSN 1027-4510, DOI 10.1134/S1027451015050432
Примечания : Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043.
Ключевые слова (''Своб.индексиров.''): magnetoresistance--magnetotransport properties--photoconductivity--bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.
Смотреть статью,
Scopus,
Читать в сети ИФ
Найти похожие

19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Gustaitsev A. O., Volkov N. V.
Заглавие : The bias-controlled magnetoimpedance effect in a MIS structure
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.451-455. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.451. - ISSN 978-3-03835-482-6
Ключевые слова (''Своб.индексиров.''): bias--magnetoimpedance--mis-structure--magnetic fields--schottky barrier diodes--temperature distribution--applied magnetic fields--bias--giant magneto impedance effect--lower temperatures--magneto-impedance--magneto-impedance effects--mis structure--temperature dependence--magnetism
Аннотация: We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field. © (2015) Trans Tech Publications, Switzerland.
Scopus,
Материалы конференции,
Читать в сети ИФ,
Читать в сети ИФ
Найти похожие

20.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : The bias-controlled frequency-dependent ac transport properties of the FeNi/SiO2/p-Si Schottky diode
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.111
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
Материалы конференции
Найти похожие