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    Implanted gallium impurity detection in silicon by impedance spectroscopy / D. Tetelbaum, A. Nikolskaya, M. Dorokhin [et al.] // Mater. Lett. - 2022. - Vol. 308, Part B. - Ст. 131244, DOI 10.1016/j.matlet.2021.131244. - Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886) . - ISSN 0167-577X
   Перевод заглавия: Обнаружение имплантированной примеси галлия в кремнии методом импедансной спектроскопии
Кл.слова (ненормированные):
Silicon -- Ion implantation -- Impedance spectroscopy -- Energy levels -- Ion channeling
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.

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Держатели документа:
Research Institute of Physics and Technology, Lobachevsky University, 23/3 Gagarina Avenue, Nizhny Novgorod, 603022, Russian Federation
Kirensky Institute of Physics, 50 st. Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Tetelbaum, D.; Nikolskaya, A.; Dorokhin, M.; Vasiliev, V.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Baron, F. A.; Барон, Филипп Алексеевич; Tarasov, A. S.; Тарасов, Антон Сергеевич
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Influence of partial substitution of iron by gallium on optical properties of GdFe3(bo3)4 [Text] / Malakhovskii A.V.Sukhachev A.L.Vasil’ev A.D. [et al.] // Физика диэлектриков (Диэлектрики-2011) : материалы XII Междунарю конф. - СПб. : Изд-во Российского гос. пед. ун-та им. А. И. Герцена, 2011. - Т. 1. - P171-174

Доп.точки доступа:
Malakhovskii, A.V.; Sukhachev, A.L.; Vasil’ev, A.D.; Leont’ev, A.A.; Kartashev, A.V.; Temerov, V.L.; Gudim, I.A.; "Физика диэлектриков", международная конференция(12 ; 2011 ; май ; 23-26 ; Санкт-Петербург)
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Research of features magnetic permeability and domain structures in Fe 2O3:GA crystals near the morin transition / A. V. Chzhan [et al.] // Solid State Phenomena. - 2009. - Vol. 152-153. - P29-32, DOI 10.4028/www.scientific.net/SSP.152-153.29 . - ISSN 1012-0394
Кл.слова (ненормированные):
Antiferromagnetic -- Domain structure -- Hematite -- Morin transition -- Weakly ferromagnetic -- Antiferromagnetic materials -- Antiferromagnetism -- Capillarity -- Crystal impurities -- Crystals -- Ferromagnetic materials -- Ferromagnetic resonance -- Ferromagnetism -- Gallium -- Hematite -- Iron ores -- Magnetic permeability -- Oxide minerals -- Permanent magnets -- Antiferromagnetism -- Crystal impurities -- Ferromagnetic materials -- Ferromagnetism -- Gallium -- Hematite -- Iron compounds -- Magnetic materials -- Magnetic permeability -- Magnetism -- AFM -- Antiferromagnetic -- Antiferromagnetic domains -- Antiferromagnetics -- Basal planes -- Domain configurations -- Domain structure -- Morin transitions -- Multi-layered structure -- Weakly ferromagnetic -- Magnetic domains -- Magnetic domains
Аннотация: Specially picked up web-chamber is used for visualization of domain structure in hematite. An analysis of domain configuration shows, that domain structure of hematite in a basal plane represents multilayered structure which contains domains both in paralleled thickness and in the parallel basal planes. The temperature features of magnetic permeability and domain structures in Fe2O3:Ga crystals near the Morin transition are investigated. Observable changes of magnetic permeability and changes in domain structure confirm that transition from AFM to WFM occurs in the hematite with Ga impurity as transition of the first sort. Results of research of antiferromagnetic and weakly ferromagnetic resonances (AFMR and WFMR) in these compounds are presented.

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Держатели документа:
Kirenskii Institute of Physics, Siberian Branch of RAS, Institute of Physics, Krasnoyarsk 660036Academgorodok, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Chzhan, A.V.; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Isaeva, T. N.; Patrin, G. S.; Патрин, Геннадий Семёнович; Moscow International Symposium on Magnetism(4 ; 2008 ; Jun. ; Moscow)
}
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Crystal structure and thermodynamic properties of titanate ErGaTi2O7 / L. T. Denisova, M. S. Molokeev, V. V. Ryabov [et al.] // Russ. J. Inorg. Chem. - 2021. - Vol. 66, Is. 4. - P. 532-537, DOI 10.1134/S0036023621040082. - Cited References: 29 . - ISSN 0036-0236
Кл.слова (ненормированные):
erbium gallium titanate -- solid-state synthesis -- crystal structure -- high-temperature heat capacity -- thermodynamic functions
Аннотация: Erbium gallium titanate was prepared by solid-phase synthesis via the sequential calcination of precursor oxides in an air atmosphere at 1273 and 1573 K. The crystal structure of ErGaTi2O7 was characterized by full-profile analysis for the X-ray diffraction pattern of the synthesized powder sample as follows: space group Pcnb, a = 9.77326(15) Å, b = 13.5170(2) Å, c = 7.33189(11) Å, V = 918.58(3) Å3, ρ = 6.10 g/cm3. The high-temperature heat capacity of erbium gallium titanate was measured by differential scanning calorimetry within a temperature range of 320–1000 K. Based on these data, the basic thermodynamic functions of ErGaTi2O7 were calculated.

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Публикация на русском языке Кристаллическая структура и термодинамические свойства титаната ErGaTi2O7 [Текст] / Л. Т. Денисова, М. С. Молокеев, В. В. Рябов [и др.] // Журн. неорг. химии. - 2021. - Т. 66 № 4. - С. 492-497

Держатели документа:
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirenskii Institute of Physics, Federal Research Center “Krasnoyarsk Scientific Center”, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Metallurgy, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620016, Russian Federation
Baikov Institute of Metallurgy and Material Science, Russian Academy of Sciences, Moscow, 119991, Russian Federation

Доп.точки доступа:
Denisova, L. T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Ryabov, V. V.; Kargin, Y. F.; Chumilina, L. G.; Denisov, V. M.
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Synthesis, Crystal Structure and Thermodynamic Properties of LuGaTi2O7 / L. T. Denisova, M. S. Molokeev, L. G. Chumilina [et al.] // Inorg. Mater. - 2020. - Vol. 56, Is. 12. - P. 1242-1247, DOI 10.1134/S0020168520120055. - Cited References: 25 . - ISSN 0020-1685
Кл.слова (ненормированные):
lutetium gallium titanate -- mixed oxide compounds -- high-temperature heat capacity -- thermodynamic properties
Аннотация: Single-phase LuGaTi2O7 samples have been prepared by solid-state reaction in a starting mixture of Lu2O3, Ga2O3, and TiO2 via sequential firing in air at temperatures of 1273 and 1573 K. The crystal structure of the lutetium gallium dititanate has been determined by the Rietveld method (profile analysis of X-ray diffraction patterns of polycrystalline powders): sp. gr. Pcnb; a = 9.75033(13) Å, b = 13.41425(17) Å, c = 7.29215(9) Å, V = 957.32(2) Å3, d = 6.28 g/cm3. The heat capacity of LuGaTi2O7 has been determined as a function of temperature by differential scanning calorimetry in the range 320–1000 K. The Cp(T) data thus obtained have been used to calculate the principal thermodynamic functions of the oxide compound.

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Публикация на русском языке Синтез, кристаллическая структура и термодинамические свойства LuGaTi2O7 [Текст] / Л. Т. Денисова, М. С. Молокеев, Л. Г. Чумилина [и др.] // Неорган. матер. - 2020. - Т. 56 № 12. - С. 1311-1316

Держатели документа:
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center (Federal Research Center), Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow, 119991, Russian Federation
Institute of Metallurgy, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620016, Russian Federation

Доп.точки доступа:
Denisova, L. T.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Chumilina, L. G.; Kargin, Y. F.; Denisov, V. M.; Ryabov, V. V.
}
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Coexistence of the electric polarization and conductive current in the bismuth–neodymium ferrite garnet films / S. S. Aplesnin, A. N. Masyugin, M. N. Volochaev, T. Ishibashi // J. Mater. Sci. Mater. Electron. - 2021. - Vol. 32. - P. 3766-3781, DOI 10.1007/s10854-020-05121-9. - Cited References: 42 . - ISSN 0957-4522
Кл.слова (ненормированные):
Bismuth -- Bismuth compounds -- Dielectric materials -- Epitaxial films -- Ferroelectricity -- Gallium compounds -- Garnets -- Hysteresis -- Iron compounds -- Neodymium -- Neodymium compounds -- Piezoelectricity -- Single crystals -- Substrates
Аннотация: The Nd1Bi2Fe5O12/Nd2Bi1Fe4Ga1O12 polycrystalline films on the glass substrate and the Nd0.5Bi2.5Fe5O12 epitaxial films on the single-crystal gadolinium gallium garnet substrate have been investigated by impedance and dielectric spectroscopy. The inductive contribution to the impedance and two relaxation channels related to ferroelectric domains and migration polarization have been established. The magnetocapacitance and magnetoimpedance have been determined. The conductive and polarization currents and the phase difference between them for the films of two types have been determined. The critical temperatures of the polarization disappearance and hysteresis I–V have been found. A model of the polarization caused by the piezoelectric effect and flexoelectric interaction has been proposed. I–V hysteresis is explained by the presence of ferroelectric domains near the interface and is associated with the hysteresis of the electric polarization.

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Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Department of Materials Science and Technology, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

Доп.точки доступа:
Aplesnin, S. S.; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Ishibashi, T.
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    Destruction of long-range magnetic order in an external magnetic field and the associated spin dynamics in Cu2GaBO5 and Cu2AlBO5 ludwigites / A. A. Kulbakov, R. Sarkar, O. Janson [et al.] // Phys. Rev. B. - 2021. - Vol. 103, Is. 2. - Ст. 024447, DOI 10.1103/PhysRevB.103.024447. - Cited References: 46. - We thank U. Nitzsche for technical assistance. This project was funded in part by the German Research Foundation (DFG) under Grant IN 209/9-1, via Project C03 of the Collaborative Research Center SFB 1143 (project-id 247310070) at the TU Dresden, and the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter—ct.qmat (EXC 2147, project-id 390858490). O.J. was supported by the Leibniz Association through the Leibniz Competition . - ISSN 2469-9950
   Перевод заглавия: Разрушение дальнего магнитного порядка во внешнем магнитном поле и связанная с ним спиновая динамика в людвигитах Cu2GaBO5 и Cu2AlBO5
Кл.слова (ненормированные):
Aluminum compounds -- Antiferromagnetic materials -- Antiferromagnetism -- Band structure -- Copper compounds -- Crystal structure -- Density functional theory -- Gallium compounds -- Magnetic fields -- Neutron diffraction -- Neutron scattering -- Spin fluctuations -- Spin glass -- Temperature -- Antiferromagnetic exchange -- Antiferromagnetic orderings -- Brillouin zone boundary -- External magnetic field -- Long range magnetic order -- Long-range-ordered state -- Quantum spin systems -- Two-dimensional spin model -- Boron compounds
Аннотация: The quantum spin systems Cu2M′BO5 (M′=Al,Ga) with the ludwigite crystal structure consist of a structurally ordered Cu2+ sublattice in the form of three-leg ladders, interpenetrated by a structurally disordered sublattice with a statistically random site occupation by magnetic Cu2+ and nonmagnetic Ga3+ or Al3+ ions. A microscopic analysis based on density-functional-theory calculations for Cu2GaBO5 reveals a frustrated quasi-two-dimensional spin model featuring five inequivalent antiferromagnetic exchanges. A broad low-temperature 11B nuclear magnetic resonance points to a considerable spin disorder in the system. In zero magnetic field, antiferromagnetic order sets in below TN≈4.1 K and ∼2.4 K for the Ga and Al compounds, respectively. From neutron diffraction, we find that the magnetic propagation vector in Cu2GaBO5 is commensurate and lies on the Brillouin-zone boundary in the (H0L) plane, qm=(0.45,0,−0.7), corresponding to a complex noncollinear long-range ordered structure with a large magnetic unit cell. Muon spin relaxation is monotonic, consisting of a fast static component typical for complex noncollinear spin systems and a slow dynamic component originating from the relaxation on low-energy spin fluctuations. Gapless spin dynamics in the form of a diffuse quasielastic peak is also evidenced by inelastic neutron scattering. Most remarkably, application of a magnetic field above 1 T destroys the static long-range order, which is manifested in the gradual broadening of the magnetic Bragg peaks. We argue that such a crossover from a magnetically long-range ordered state to a spin-glass regime may result from orphan spins on the structurally disordered magnetic sublattice, which are polarized in magnetic field and thus act as a tuning knob for field-controlled magnetic disorder.

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Держатели документа:
Institut fur Festkorper- und Materialphysik, Technische Universitat Dresden, Dresden, 01069, Germany
Wurzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter - Ct.qmat, TU Dresden, Dresden, 01069, Germany
Institute for Theoretical Solid State Physics, IFW Dresden, Dresden, 01069, Germany
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, Villigen PSI, CH-5232, Switzerland
Institute for Quantum Phenomena in Novel Materials, Helmholtz-Zentrum Berlin fur Materialen und Energie GmbH, Hahn-Meitner-Platz 1, Berlin, 14109, Germany
Max Planck Institute for Chemical Physics of Solids, Nothnitzer Str. 40, Dresden, 01187, Germany
Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Sibirsky tract 10/7, Kazan, 420029, Russian Federation
Fakultat Chemie und Lebensmittelchemie, Technische Universitat Dresden, Dresden, 01069, Germany
Julich Center for Neutron Science at MLZ, Forschungszentrum Julich GmbH, Lichtenbergstra?e 1, Garching, 85748, Germany

Доп.точки доступа:
Kulbakov, A. A.; Sarkar, R.; Janson, O.; Dengre, S.; Weinhold, T.; Moshkina, E. M.; Мошкина, Евгения Михайловна; Portnichenko, P. Y.; Luetkens, H.; Yokaichiya, F.; Sukhanov, A. S.; Eremina, R. M.; Schlender, P.; Schneidewind, A.; Klauss, H. -H.; Inosov, D. S.
}
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Unusual Valence States of Manganese Ions in Gadolinium Gallium Aluminum Borate Single Crystals [Text] / A. S. Aleksandrovsky, L. N. Bezmaternykh [et al.] // Известия высших учебных заведений. Физика. - 2008. - Т. 51, № 10/2. - P115-119

Доп.точки доступа:
Aleksandrovsky, A.S.; Bezmaternykh, L.N.; Bovina, A.F.; Gudim, I.A.; Kharlamova, S.A.; Krylov, A.S.; Melnikova, S.V.; Temerov, V.Ye.
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Electrically controllable optical switch based on one-dimensional photonic crystal / V. A. Gunyakov [et al.] // Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - P186-188, DOI 10.1109/CAOL.2008.4671886 . - ISBN 9781424419746 (ISBN)
Кл.слова (ненормированные):
Detect mode -- Liquid crystal -- Photonic band gap -- Photonic crystal -- Crossed polarizers -- Detect mode -- Electric-field -- Electrooptical switches -- Light waves -- Spectral ranges -- Crystal atomic structure -- Crystal defects -- Energy gap -- Gallium alloys -- Light sources -- Liquid crystals -- Liquid lasers -- Nematic liquid crystals -- Optical devices -- Photonic crystals -- Photonic band gap
Аннотация: Electrooptical switch within narrow spectral range has been demonstrated. The switch consisting of one-dimensional photonic crystal with a nematic liquid crystal defect layer was placed between two crossed polarizers. Principle of operation is based on the interference of the ordinary and extraordinary light waves passed across the device due to the electric-field induced coincidence of their wavelengths. © 2008 IEEE.

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Держатели документа:
L. V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, SB RAS
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Shabanov, V. F.; Шабанов, Василий Филиппович; International Conference on Advanced Optoelectronics and Lasers(4th ; 2008 ; Apr. 29 Sep. - 04 Oct. ; Alushta, Crimea)
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10.

Defect modes in real photonic crystals / V. G. Arkhipkin [et al.] // Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - P183-185, DOI 10.1109/CAOL.2008.4671857 . - ISBN 9781424419746 (ISBN)
Кл.слова (ненормированные):
Detect mode -- Liquid crystal -- Photonic band gap -- Photonic crystal -- Defect modes -- Detect mode -- Number of layers -- Photonic crystal structures -- Crystal atomic structure -- Crystal structure -- Defects -- Energy gap -- Gallium alloys -- Light sources -- Liquid crystals -- Liquid lasers -- Optical devices -- Photonic band gap -- Silicon on insulator technology -- Photonic crystals
Аннотация: It is demonstrated experimentally that amplitudes of defect modes of one-dimensional photonic crystal have maximal value near edges of the photonic band gap while at the centre of the stop-band they are reduced, moreover than more number of layers in photonic crystal, the less the amplitude of defect mode at the center of the PBG. We explain such behavior of defect modes presence of losses at propagation of light in real photonic crystal structures. © 2008 IEEE.

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Держатели документа:
L.V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, SB RAS
Siberian Federal University, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович; International Conference on Advanced Optoelectronics and Lasers(4th ; 2008 ; Apr. 29 Sep. - 04 Oct. ; Alushta, Crimea)
}
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