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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chen Y., Liu F., Zhang Z., Hong J., Molokeev M. S., Bobrikov I. A., Shi J., Zhou J., Wu M.
Заглавие : A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs
Место публикации : J. Mater. Chem. C. - 2022. - Vol. 10, Is. 18. - P.7049-7057. - ISSN 20507534 (ISSN), DOI 10.1039/d2tc00132b
Примечания : Cited References: 56. - This work was financially supported by grants from the National Natural Science Foundation of China (NSFC) (No. 51802359), the Joint Funds of NSFC and Yunnan Province (No. U1702254), and Guangdong Basic and Applied Basic Research Foundation (No. 2020A1515010556)
Аннотация: Red-light-emitting materials, as pivotal components of warm white light-emitting diodes (WLEDs), have drawn increasing public focus. Among these, Mn4+-doped red light-emitting fluorides have drawn considerable attention when combined with an InGaN chip; however, they suffer from poor water stability under humid conditions. In this work, a novel fluoride red phosphor, Cs30(Nb2O2F9)9(OH)3·H2O:xMn4+ (CNOFM), with good water resistance was synthesized for the first time using a facile co-precipitation method at ambient temperature. Experiments were implemented for the precise analysis of its crystal structure, optical properties, micro-morphology, thermal behavior, and waterproof properties. 6.66% Mn4+-doped CNOFM maintained a stable crystal structure and possessed strong PL intensity located at 633 nm with high color purity of 96%. CNOFM showed better thermal and waterproof stability compared with the commercial K2SiF6:Mn4+ red phosphor. Without any surface modifications, the PL intensity remained at about 83% of the initial value after immersion in water for 60 min, and the mechanism was investigated. Finally, a warm WLED with a CRI of 92.3 and CCT of 3271 K was fabricated using the CNOFM red phosphor.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Hu T., Molokeev M. S., Xia Z., Zhang Q.
Заглавие : Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance
Место публикации : J. Mater. Chem. C. - 2019. - Vol. 7, Is. 46. - P.14594-14600. - ISSN 20507534 (ISSN), DOI 10.1039/c9tc05354a
Примечания : Cited References: 38. - This work was supported by the National Natural Science Foundation of China (No. 51722202 and 51972118), the Guangdong Provincial Science & Technology Project (2018A050506004) and the Fundamental Research Funds for the Central Universities (D2190980).
Аннотация: Highly efficient phosphors with thermal stability and color-tunable emission are required for the fabrication of phosphor-converted white light-emitting diodes (pc-WLEDs). Currently developed engineering strategies are generally successful in photoluminescence tuning but, unfortunately, suffer severe deterioration in emission intensity/efficiency and/or thermal stability. Herein, an efficient aliovalent substitution strategy toward reinforced structural rigidity is proposed and demonstrated experimentally. By incorporating Be2+ ion into the garnet-type Lu2SrAl4SiO12:Ce3+ phosphor, the phosphor shows enhanced internal/external quantum efficiency, from 79.2%/26.7% to 84.5%/32.9%, photoluminescence tuning from green (peaking at ∼512 nm) to yellow (peaking at ∼552 nm), and zero thermal quenching, even up to 200 °C. The Be2+ substitution at the Al2/Si2 site enables stable and rigid local surroundings around the Ce3+ activator, which is responsible for the unprecedented performance. In addition, high-quality warm WLED devices with a luminous efficiency of 158.1 lm W-1, correlated color temperature of 3858 K and high color rendering index of 81.7, are obtained by combining Lu2SrAl4SiO12:Ce3+,Be2+ as the yellow emitter, CaAlSiN3:Eu2+ as the red emitter and a blue-emitting InGaN chip. These findings highlight a new strategy for performance optimization of LED phosphors by selecting rigid covalent compounds with further reinforced structural rigidity via aliovalent substitution.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P. B., Ovchinnikov S. G., Avramov P. V., Chernozatonskii L.A., Fedorov D.G.
Заглавие : Atypical quantum confinement effect in silicon nanowires
Место публикации : J. Phys. Chem. A. - WASHINGTON: AMER CHEMICAL SOC, 2008. - Vol. 112, Is. 40. - С. 9955-9964. - OCT 9. - ISSN 1089-5639, DOI 10.1021/jp805069b
Примечания : Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096]
Предметные рубрики: ELECTRONIC-STRUCTURE
OPTICAL-PROPERTIES
SI
DENSITY
WIRES
EXCHANGE
ATOMS
DOTS
Ключевые слова (''Своб.индексиров.''): electric wire--energy gap--gallium alloys--mathematical models--nanostructured materials--nanostructures--nanowires--quantum confinement--quantum electronics--semiconductor quantum dots--silicon--ami methods--band gaps--blue shifts--dinger equations--linear junctions--monotonic decreases--quantum confinement effects--quantum dots--semiempirical--silicon nanowires--system sizes--theoretical models--nanocrystalline silicon--nanowire--quantum dot--silicon--article--chemistry--electron--quantum theory--electrons--nanowires--quantum dots--quantum theory--silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Masyugin A. N., Volochaev M. N., Ishibashi T.
Заглавие : Coexistence of the electric polarization and conductive current in the bismuth–neodymium ferrite garnet films
Место публикации : J. Mater. Sci. Mater. Electron. - 2021. - Vol. 32. - P.3766-3781. - ISSN 09574522 (ISSN), DOI 10.1007/s10854-020-05121-9
Примечания : Cited References: 42
Аннотация: The Nd1Bi2Fe5O12/Nd2Bi1Fe4Ga1O12 polycrystalline films on the glass substrate and the Nd0.5Bi2.5Fe5O12 epitaxial films on the single-crystal gadolinium gallium garnet substrate have been investigated by impedance and dielectric spectroscopy. The inductive contribution to the impedance and two relaxation channels related to ferroelectric domains and migration polarization have been established. The magnetocapacitance and magnetoimpedance have been determined. The conductive and polarization currents and the phase difference between them for the films of two types have been determined. The critical temperatures of the polarization disappearance and hysteresis I–V have been found. A model of the polarization caused by the piezoelectric effect and flexoelectric interaction has been proposed. I–V hysteresis is explained by the presence of ferroelectric domains near the interface and is associated with the hysteresis of the electric polarization.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Denisova L. T., Molokeev M. S., Ryabov V. V., Kargin Y. F., Chumilina L. G., Denisov V. M.
Заглавие : Crystal structure and thermodynamic properties of titanate ErGaTi2O7
Место публикации : Russ. J. Inorg. Chem. - 2021. - Vol. 66, Is. 4. - P.532-537. - ISSN 00360236 (ISSN), DOI 10.1134/S0036023621040082
Примечания : Cited References: 29
Аннотация: Erbium gallium titanate was prepared by solid-phase synthesis via the sequential calcination of precursor oxides in an air atmosphere at 1273 and 1573 K. The crystal structure of ErGaTi2O7 was characterized by full-profile analysis for the X-ray diffraction pattern of the synthesized powder sample as follows: space group Pcnb, a = 9.77326(15) Å, b = 13.5170(2) Å, c = 7.33189(11) Å, V = 918.58(3) Å3, ρ = 6.10 g/cm3. The high-temperature heat capacity of erbium gallium titanate was measured by differential scanning calorimetry within a temperature range of 320–1000 K. Based on these data, the basic thermodynamic functions of ErGaTi2O7 were calculated.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Arkhipkin V. G., Gunyakov V. A., Myslivets S. A., Zyryanov V. Ya., Shabanov V. F.
Заглавие : Defect modes in real photonic crystals
Коллективы : International Conference on Advanced Optoelectronics and Lasers
Место публикации : Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - С. 183-185. - ISBN 9781424419746 (ISBN), DOI 10.1109/CAOL.2008.4671857
Ключевые слова (''Своб.индексиров.''): detect mode--liquid crystal--photonic band gap--photonic crystal--defect modes--detect mode--number of layers--photonic crystal structures--crystal atomic structure--crystal structure--defects--energy gap--gallium alloys--light sources--liquid crystals--liquid lasers--optical devices--photonic band gap--silicon on insulator technology--photonic crystals
Аннотация: It is demonstrated experimentally that amplitudes of defect modes of one-dimensional photonic crystal have maximal value near edges of the photonic band gap while at the centre of the stop-band they are reduced, moreover than more number of layers in photonic crystal, the less the amplitude of defect mode at the center of the PBG. We explain such behavior of defect modes presence of losses at propagation of light in real photonic crystal structures. © 2008 IEEE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kulbakov A. A., Sarkar R., Janson O., Dengre S., Weinhold T., Moshkina E. M., Portnichenko P. Y., Luetkens H., Yokaichiya F., Sukhanov A. S., Eremina R. M., Schlender P., Schneidewind A., Klauss H. -H., Inosov D. S.
Заглавие : Destruction of long-range magnetic order in an external magnetic field and the associated spin dynamics in Cu2GaBO5 and Cu2AlBO5 ludwigites
Место публикации : Phys. Rev. B. - 2021. - Vol. 103, Is. 2. - Ст.024447. - ISSN 24699950 (ISSN), DOI 10.1103/PhysRevB.103.024447
Примечания : Cited References: 46. - We thank U. Nitzsche for technical assistance. This project was funded in part by the German Research Foundation (DFG) under Grant IN 209/9-1, via Project C03 of the Collaborative Research Center SFB 1143 (project-id 247310070) at the TU Dresden, and the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter—ct.qmat (EXC 2147, project-id 390858490). O.J. was supported by the Leibniz Association through the Leibniz Competition
Аннотация: The quantum spin systems Cu2M′BO5 (M′=Al,Ga) with the ludwigite crystal structure consist of a structurally ordered Cu2+ sublattice in the form of three-leg ladders, interpenetrated by a structurally disordered sublattice with a statistically random site occupation by magnetic Cu2+ and nonmagnetic Ga3+ or Al3+ ions. A microscopic analysis based on density-functional-theory calculations for Cu2GaBO5 reveals a frustrated quasi-two-dimensional spin model featuring five inequivalent antiferromagnetic exchanges. A broad low-temperature 11B nuclear magnetic resonance points to a considerable spin disorder in the system. In zero magnetic field, antiferromagnetic order sets in below TN≈4.1 K and ∼2.4 K for the Ga and Al compounds, respectively. From neutron diffraction, we find that the magnetic propagation vector in Cu2GaBO5 is commensurate and lies on the Brillouin-zone boundary in the (H0L) plane, qm=(0.45,0,−0.7), corresponding to a complex noncollinear long-range ordered structure with a large magnetic unit cell. Muon spin relaxation is monotonic, consisting of a fast static component typical for complex noncollinear spin systems and a slow dynamic component originating from the relaxation on low-energy spin fluctuations. Gapless spin dynamics in the form of a diffuse quasielastic peak is also evidenced by inelastic neutron scattering. Most remarkably, application of a magnetic field above 1 T destroys the static long-range order, which is manifested in the gradual broadening of the magnetic Bragg peaks. We argue that such a crossover from a magnetically long-range ordered state to a spin-glass regime may result from orphan spins on the structurally disordered magnetic sublattice, which are polarized in magnetic field and thus act as a tuning knob for field-controlled magnetic disorder.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aleksandrov K. S., Sorokin B. P., Turchin P. P., Burkov S. I., Glushkov D. A., Karpovich A. A.
Заглавие : Effects of static electric field and of mechanical pressure on surface acoustic waves propagation in La3Ga5SiO14 piezoelectric single crystals
Коллективы : IEEE International Ultrasonics Symposium
Место публикации : Proc IEEE Ultrason Symp. - 1995. - Vol. 1. - P.409-412. - ISBN 1051-0117
Ключевые слова (''Своб.индексиров.''): electric field effects--electrostriction--lanthanum compounds--piezoelectric materials--piezoelectricity--pressure effects--quartz--single crystals--tensors--bulk acoustic wave--dielectric permeability--electromechanical bond coefficients--lanthanum gallium silicide--mechanical pressure--nonlinear electromechanical properties--nonlinear piezoelectric effect--piezoquartz--static electric field--tensorial components--ultrasonic propagation
Аннотация: The complete set of tensorial components of linear and nonlinear electromechanical properties for La3Ga5SiO14 piezoelectric crystals have been obtained. These data were used for the analysis of influence of static electrical field and of uniaxial homogeneous mechanical pressure on the propagation of surface acoustic waves.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gunyakov V. A., Zyryanov V. Ya., Myslivets S. A., Arkhipkin V. G., Shabanov V. F.
Заглавие : Electrically controllable optical switch based on one-dimensional photonic crystal
Коллективы : International Conference on Advanced Optoelectronics and Lasers
Место публикации : Proceedings of CAOL 2008: 4th International Conference on Advanced Optoelectronics and Lasers. - 2008. - 4th International Conference on Advanced Optoelectronics and Lasers, CAOL 2008 (29 September 2008 through 4 October 2008, Alushta, Crimea, ) Conference code: 74830. - С. 186-188. - ISBN 9781424419746 (ISBN), DOI 10.1109/CAOL.2008.4671886
Ключевые слова (''Своб.индексиров.''): detect mode--liquid crystal--photonic band gap--photonic crystal--crossed polarizers--detect mode--electric-field--electrooptical switches--light waves--spectral ranges--crystal atomic structure--crystal defects--energy gap--gallium alloys--light sources--liquid crystals--liquid lasers--nematic liquid crystals--optical devices--photonic crystals--photonic band gap
Аннотация: Electrooptical switch within narrow spectral range has been demonstrated. The switch consisting of one-dimensional photonic crystal with a nematic liquid crystal defect layer was placed between two crossed polarizers. Principle of operation is based on the interference of the ordinary and extraordinary light waves passed across the device due to the electric-field induced coincidence of their wavelengths. © 2008 IEEE.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Qiao J., Amachraa M., Molokeev M. S., Chuang Y. -C., Ong S. P., Zhang Q., Xia Z.
Заглавие : Engineering of K3YSi2O7 to Tune Photoluminescence with Selected Activators and Site Occupancy
Место публикации : Chem. Mater. - 2019. - Vol. 31, Is. 18. - P.7770-7778. - ISSN 08974756 (ISSN), DOI 10.1021/acs.chemmater.9b02990
Примечания : Cited References: 48. - This work was supported by the National Natural Science Foundation of China (Nos. 51722202, 51972118 and 51572023), Natural Science Foundations of Beijing (2172036), Fundamental Research Funds for the Central Universities (FRF-TP-18-002C1), and Guangdong Provincial Science & Technology Project (2018A050506004). This work was also supported by the National Science Foundation, Ceramics Program (No. 1911372), and the computational resources were provided by the Extreme Science and Engineering Discovery Environment (XSEDE) supported by the National Science Foundation (No. ACI-1548562).
Аннотация: The luminescence of rare earth ions (Eu2+, Ce3+, and Eu3+)-doped inorganic solids is attractive for the screening of phosphors applied in solid-state lighting and displays and significant to probe the occupied crystallographic sites in the lattice also offering new routes to photoluminescence tuning. Here, we report on the discovery of the Eu- and Ce-activated K3YSi2O7 phosphors. K3YSi2O7:Eu is effectively excited by 450 nm InGaN blue light-emitting diodes (LEDs) and displays an orange-red emission originated from characteristic transitions of both Eu2+ and Eu3+, while K3YSi2O7:Ce3+ shows green emission upon 394 nm near-ultraviolet (NUV) light excitation. Rietveld refinement verifies the successful doping of the activators, and density functional theory (DFT) calculations further support that Eu2+ occupies both K1 and Y2 crystallographic sites, while Ce3+ and Eu3+ only occupy the Y2 site; hence, the broad-band red emission of Eu2+ are attributed to a small DFT band gap (3.69 eV) of K3YSi2O7 host and a selective occupancy of Eu2+ in a highly distorted K1 site and a high crystal field splitting around Y2 sites. The white LEDs device utilizing orange-red-emitting K3YSi2O7:Eu and green-emitting K3YSi2O7:Ce3+ exhibits an excellent CRI of 90.1 at a correlated color temperature of 4523 K. Our work aims at bridging multivalent Eu2+/Eu3+ and Ce3+ site occupancy in the same host to realize photoluminescence tuning and especially exposes new ways to explore new phosphors with multicolor emission pumped by blue and NUV light for white LEDs.
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