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Formation of nonmagnetic phases in Fe/Si interface / S. N. Varnakov [et al.] // Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts / предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P. 21

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Доп.точки доступа:
Aleksandrov, K. S. \предс. сем.\; Александров, Кирилл Сергеевич; Patrin, G. S. \зам. предс. сем.\; Патрин, Геннадий Семёнович; Ovchinnikov, S. G. \зам. предс. сем.\; Овчинников, Сергей Геннадьевич; Kosyrev, N. N. \чл. лок. ком.\; Косырев, Николай Николаевич; Fedorov, A. S. \чл. лок. ком.\; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Bartolome, J.; Sese, J.; "Trends in Nanomechanics and Nanoengineering", workshop(2009 ; Aug. ; 24-28 ; Krasnoyarsk); Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Spectral dependences of transmittance and polarizing ability of stretched PDLC films with homogeneous and inhomogeneous interface anchoring / M. N. Krakhalev [et al.] // EuroDisplay 2019 : book of abstracts of International conference. - 2019. - Ст. O-9. - P. 25. - Cited References: 2

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Доп.точки доступа:
Loiko, V. A.; Лойко В. А.; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Konkolovich, A. V.; Конколович А. В. ; Miskevich, A. A.; Мискевич А. А.; Prishchepa, O. O.; Прищепа, Оксана Олеговна; Shabanov, A. V.; Шабанов, Александр Васильевич; Krakhalev, M. N.; Крахалев, Михаил Николаевич; EuroDisplay international conference(2019 ; Sept. ; 16-20 ; Minsk, Belarus); Society for Information Displays; Белорусский государственный университет информатики и радиоэлектроники
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    Magnetoimpedance Effect in a SOI-Based Structure / D. A. Smolyakov [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 98-100, DOI 10.1134/S1063782619140215. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Эффект магнитоимпеданса в структуре на основе КНИ
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
magnetoimpedance -- spintronics -- silicone on insulator -- nanosized semiconductors -- interface states
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Siberian State University of Science and Technology, Krasnoyarsk, 660014 Russia

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич
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Chiral optical Tamm states at the interface between an all-dielectric polarization-preserving anisotropic mirror and a cholesteric liquid crystal / N. V. Rudakova [et al.] // Crystals. - 2019. - Vol. 9, Is. 10. - Ст. 502, DOI 10.3390/cryst9100502. - Cited References: 48. - Russian Foundation for Basic Research (RFBR), Russia, grant No. 19-52-52006; Ministry of Science and Technology, Taiwan (MOST), grant No. 106-2923-M-009-002-MY3; M.V.P. thanks RFBR and KRSTSF for the research Project No. 18-42-243025. . - ISSN 2073-4352
Кл.слова (ненормированные):
Optical Tamm state -- Cholesteric liquid crystal -- Polarization-preserving anisotropic mirror
Аннотация: As a new localized state of light, the chiral optical Tamm state exists at the interface between a polarization-retaining anisotropic mirror and a substance with optical activity. Considering a hybrid structure comprising a metal-free polarization-preserving mirror and a cholesteric liquid crystal, we highlight the high Q factor arising from the all-dielectric framework. The intensity of localized light decreases exponentially with increasing distance from the interface. The penetration of the field into the cholesteric liquid crystal is essentially prohibited for wavelengths lying in the photonic bandgap and close to the cholesteric pitch length. The dielectric mirror has its own photonic bandgap. The energy transfer along the interface can be effectively switched off by setting the tangential wave vector to zero. The spectral behavior of the chiral optical Tamm state is observed both as reflection and transmission resonance. This Fano resonance is analogous to the Kopp-Genack effect. Our analytics are well in line with precise calculations, which may pave a new route for the future development of intelligent design for laser and sensing applications.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Institute of Imaging and Biomedical Photonics, College of Photonics, National Chiao Tung University, Tainan, 71150, Taiwan

Доп.точки доступа:
Rudakova, N. V.; Рудакова, Наталья Викторовна; Timofeev, I. V.; Тимофеев, Иван Владимирович; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Pyatnov, M. V.; Пятнов, Максим Владимирович; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Lee, W.
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Probing proximity effects in the ferromagnetic semiconductor EuO / D. V. Averyanov, A. M. Tokmachev, O. E. Parfenov [et al.] // Appl. Surf. Sci. - 2019. - Vol. 488. - P. 107-114, DOI 10.1016/j.apsusc.2019.05.191. - Cited References: 57. - This work is partially supported by NRC "Kurchatov Institute" (synthesis), the Russian Foundation for Basic Research [grant 19-07-00249] (magnetization measurements), and the Russian Science Foundation [grant 19-19-00009] (transport measurements). The measurements have been carried out using the equipment of the resource centers of electrophysical, laboratory X-ray, and electron microscopy techniques of NRC "Kurchatov Institute". The authors also gratefully acknowledge the beamtime allocation (MA-3167) by the ESRF. . - ISSN 0169-4332. - ISSN 1873-5584

РУБ Chemistry, Physical + Materials Science, Coatings & Films + Physics, Applied + Physics, Condensed Matter
Рубрики:
INTERFACE
   FIELD
   POLARIZATION
   INSULATOR
   SILICON
Кл.слова (ненормированные):
EuO -- Gd -- Ferromagnetism -- Proximity effect
Аннотация: Ferromagnetic insulators are widely employed to induce magnetic phenomena in adjacent layers via proximity effect. This approach could make non-magnetic materials (ranging from silicon to graphene) available for spintronic applications. Eu chalcogenides, EuO in particular, are highly efficient spin generators but suffer from low Curie temperatures. Here, experiments aimed at T-C increase in EuO by its integration with the ferromagnetic metal Gd are reported. The epitaxial bilayers Gd/EuO are synthesized on different substrates and characterized by a combination of diffraction and microscopy techniques. Their magnetic structure - established with magnetization and transport measurements as well as element-selective X-ray magnetic circular dichroism study - comprises coupled magnetic orders of EuO and Gd. EuO is robust against proximity effects - its T-C is still low, increased at most by a few tens of K. Nevertheless, the results encourage further studies of proximity-enhanced ferromagnetism to extend the range of applications of ultrathin layers of EuO in spintronics.

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Держатели документа:
Natl Res Ctr Kurchatov Inst, Kurchatov Sq 1, Moscow 123182, Russia.
ESRF, F-38054 Grenoble, France.

Доп.точки доступа:
Averyanov, D. V.; Tokmachev, Andrey M.; Parfenov, Oleg E.; Karateev, Igor A.; Sokolov, I. S.; Taldenkov, Alexander N.; Platunov, M. S.; Платунов, Михаил Сергеевич; Wilhelm, Fabrice; Rogalev, Andrei; Storchak, V. G.; NRC "Kurchatov Institute"; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-07-00249]; Russian Science FoundationRussian Science Foundation (RSF) [19-19-00009]
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    Polar anchoring energy and tilt angle measured by magneto-optical technique in nematic doped with ionic surfactant / A. M. Parshin, V. S. Sutormin, V. Y. Zyryanov, V. F. Shabanov // Liq. Cryst. - 2020. - Vol. 47, Is. 12. - P. 1825-1831, DOI 10.1080/02678292.2020.1733683. - Cited References: 32 . - ISSN 0267-8292. - ISSN 1366-5855
   Перевод заглавия: Полярная энергия сцепления и угол наклона измеренные магнитооптической методикой в нематике допированном ионным сурфактантом

РУБ Chemistry, Multidisciplinary + Crystallography + Materials Science, Multidisciplinary
Рубрики:
LIQUID-CRYSTAL
   TEMPERATURE-DEPENDENCE
   INTERFACE
   ADSORPTION
Кл.слова (ненормированные):
Nematic -- ionic surfactant -- tilt angle -- anchoring energy -- magnetooptics
Аннотация: The surface anchoring of a nematic doped with the ionic surfactant has been investigated and compared with the one in the undoped sample. The director tilt angle at the substrates coated with the orienting polymer film has been determined by the null method in a rotating magnetic field. The Frederiks transition in a magnetic field has been chosen as a convenient technique to measure the polar anchoring energy Wθ. The temperature dependences of anchoring energy have been obtained for the various nematic cells. The Wθ values for nematic doped with the ionic surfactant are less than for the undoped one. The factors affecting the measurement accuracy have been discussed. The accuracy is higher for the thinner nematic layers and weaker anchoring energy.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Fed Res Ctr,Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk, Russia.

Доп.точки доступа:
Parshin, A. M.; Паршин, Александр Михайлович; Sutormin, V. S.; Сутормин, Виталий Сергеевич; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
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Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures / Ivan Tarasov, Maxim Visotin, Sergey Varnakov and Sergey Ovchinnikov // 1st FunMAX Workshop 2020 : Book of Abstracts. - 2020. - P. 11. - Cited References: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).

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Держатели документа:
Kirensky Institute of Physics

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Visotin, M. A.; Высотин, Максим Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Online Workshop on the properties of Functional MAX-materials(1 ; 2020 ; Aug ; 10-12 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Chiral optical Tamm states at the interface between a Dye-doped cholesteric liquid crystal and an anisotropic mirror / A. Yu. Avdeeva, S. Ya. Vetrov, R. G. Bikbaev [et al.] // Materials. - 2020. - Vol. 13, Is. 15. - Ст. 3255, DOI 10.3390/ma13153255. - Cited References: 44. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 19-42-240004 and by Russian Foundation for Basic Research, project No. 19-52-52006 . - ISSN 1996-1944

РУБ Materials Science, Multidisciplinary
Рубрики:
PHASE
POLARIZATION
MODES
Кл.слова (ненормированные):
localization of light -- photonic crystals -- chirality -- dye-doped cholesteric liquid crystal -- optical Tamm states -- resonant frequency dispersion
Аннотация: The resonant splitting of optical Tamm state numerically is demonstrated. The Tamm state is localized at the interface between a resonant chiral medium and a polarization-preserving anisotropic mirror. The chiral medium is considered as a cholesteric liquid crystal doped with resonant dye molecules. The article shows that the splitting occurs when dye resonance frequency coincides with the frequency of the Tamm state. In this case the reflectance, transmittance, and absorptance spectra show two distinct Tamm modes. For both modes, the field localization is at the interface between the media. The external field control of configurable optical and structural parameters paves the way for use in tunable chiral microlaser.

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Публикация в сборнике Soft photonic crystals and metamaterials [Текст] / ed., pref.: I. V. Timofeev, W. Lee, 2022. - VII с. ; 127 с. (Введено оглавление)

Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Avdeeva, A. Yu.; Авдеева, Анастасия Юрьевна; Vetrov, S. Ya.; Ветров, Степан Яковлевич; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Pyatnov, M. V.; Пятнов, Максим Владимирович; Rudakova, N. V.; Рудакова, Наталья Викторовна; Timofeev, I. V.; Тимофеев, Иван Владимирович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [19-42-240004]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-52-52006]
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10.

Altunin, R. R.
Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION
   AG
   AL
   DIFFUSION
   SUPPRESSION
   INTERFACE
   SURFACE
   GROWTH
   HEAT
Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
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