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| Magnetoimpedance, Jahn-Teller transitions upon electron doping of manganese sulfide/S. S. Aplesnin, M. N. Sitnikov, A. M. Kharkov [et al.] // Journal of Magnetism and Magnetic Materials, 2020. т.Vol. 513.- Ст.167104
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| Optically tunable magnetoimpedance in Fe/Al2O3/p-Si/M. V. Rautskii, D. A. Smolyakov, I. A. Bondarev [et al.] // The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials. -VLadivostok:Dalnauka Publishing, 2020.- Ст.IV.31.11p.-С.120
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| Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect/D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Materials Science in Semiconductor Processing, 2021. т.Vol. 126.- Ст.105663
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| Magnetoresistance and magnetoimpedance in LuxMn1-xS solid solutions paramagnetic state/S. S. Aplesnin [и др.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019), 2019,N Vol. 2.- Ст.K.O5.-С.305-306
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| Influence of Induced Electrical Polarization on the Magnetoresistance and Magnetoimpedance in the Spin‐Disordered TmxMn1−xS Solid Solution/S. S. Aplesnin [et al.] // Physica Status Solidi B - Basic Solid State Physics, 2019. т.Vol. 256,N Is. 10.- Ст.1900043
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| Magnetoimpedance Effect in a SOI-Based Structure/D. A. Smolyakov [et al.] // Semiconductors, 2019. т.Vol. 53,N Is. 14.-С.98-100
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| Smolyakov D. A. High magnetic field magnetoimpedance effect in a mis structure/D. A. Smolyakov, A. S. Tarasov, I. A. Yakovlev // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019), 2019,N Vol. 1.- Ст.A.P23.-С.117
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| Advanced characterization of FeNi-based films for the development of magnetic field sensors with tailored functional parameters/S. V. Komogortsev, I. G. Vazhenina, S. A. Kleshnina [et al.] // Sensors, 2022. т.Vol. 22,N Is. 9.- Ст.3324
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| Magnetic properties of FeNi/Cu-based lithographic rectangular multilayered elements for magnetoimpedance applications/G. Yu. Melnikov, I. G. Vazhenina, R. S. Iskhakov [et al.] // Sensors, 2023. т.Vol. 23,N Is. 13.- Ст.6165
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| Magnetoimpedance in manganese sulfide substituted with lutetium/M. N. Sitnikov, S. S. Aplesnin, A. M. Kharkov [et al.] // Physics of the Solid State, 2023. т.Vol. 65,N Is. 2.-С.211-217
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| Magnetoresistance and magnetoimpedance in holmium manganese sulfides/O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // Applied Physics A: Materials Science and Processing, 2022. т.Vol. 128,N Is. 2.- Ст.124
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| Magnetoresistance and IR spectrum of impurity states in the Ce3Fe5O12 film/S. S. Aplesnin, A. N. Masyugin, V. V. Kretinin [et al.] // Physics of the Solid State, 2021. т.Vol. 63,N Is. 2.-С.242-247
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| Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device/D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Physica Status Solidi A - Applications and Materials Science, 2022. т.Vol. 219. Is. 1.- Ст.2100459
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| Electrical properties of the polycrystalline BiFe0.95Co0.05O3 films/O. B. Romanova, V. V. Kretinin, S. S. Aplesnin [et al.] // Physics of the Solid State, 2021. т.Vol. 63. Is. 6.-С.897-903
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| Magnetoresistance, magnetoimpedance, magnetothermopower, and photoconductivity in silver-doped manganese sulfides/O. B. Romanova [et al.] // Journal of Applied Physics, 2019. т.Vol. 125,N Is. 17.- Ст.175706
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| Smolyakov D. A. Bias-controlled magnetoimpedance effect in a mis structure/D. A. Smolyakov, A. O. Gustaitsev, N. V. Volkov // Moscow International Symposium on Magnetism (MISM-2014), 2014.- Ст.1PO-K-8.-С.541
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| The bias-controlled magnetoimpedance effect in a MIS structure/D. A. Smolyakov [et al.] // Solid State Phenomena:Trans Tech Publications Ltd, 2015. т.Vol. 233-234:Achievements in Magnetism.-С.451-455
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| Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si/A. V. Lukyanenko [et al.] // Internnational conference "Spin physics, spin chemistry, and spin technology", 2015.-С.111
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| Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures/N. V. Volkov [et al.] // Journal of Magnetism and Magnetic Materials:Elsevier Science, 2015. т.Vol. 383.-С.69-72
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| The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier/N. V. Volkov [et al.] // Applied Physics Letters:American Institute of Physics, 2014. т.Vol. 104,N Is. 22.- Ст.222406
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