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    Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7 / С. Е. Никитин [и др.] // Вестник НГУ. Физика. - 2015. - Т. 10, Вып. 1. - С. 63-66. - Библиогр.: 8 . - ISSN 1818-7994
   Перевод заглавия: Features of magnetoresistance in the bilayer single crystal manganite La1.4Sr1.6Mn2O
Кл.слова (ненормированные):
манганиты лантана -- положительное магнетосопротивление -- manganite -- positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T < 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.
We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T < 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Никитин, Станислав Евгеньевич; Nikitin, S. E.; Попков, Сергей Иванович; Popkov, S. I.; Петров, Михаил Иванович; Petrov, M. I.; Терентьев, Константин Юрьевич; Terent'yev, K. Yu.; Семенов, Сергей Васильевич; Semenov, S. V.; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X ; 13 - 14 ноября 2014 г. ; Новосибирск)
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Вальков, Валерий Владимирович.
Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе / В. В. Вальков, А. Д. Федосеев // Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.

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Переводная версия Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase. - [Б. м. : б. и.]

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Федосеев, Александр Дмитриевич; Fedoseev, A. D.; Val'kov, V. V.
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Zakharov, Yu. V.
Magnetoresistance of ferromagnets with domain-structure / Yu. V. Zakharov, Yu. I. Mankov // Phys. Status Solidi B. - 1984. - Vol. 125, Is. 1. - P. 197-205, DOI 10.1002/pssb.2221250122. - Cited References: 21 . - ISSN 0370-1972

РУБ Physics, Condensed Matter

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Держатели документа:
Acad of Sciences of the USSR, L. V., Kirenskii Inst of Physics,, Krasnoyarsk, USSR, Acad of Sciences of the USSR, L. V. Kirenskii Inst of Physics, Krasnoyarsk, USSR
ИФ СО РАН
Доп.точки доступа:
Mankov, Yu. I.; Маньков, Юрий Иннокентьевич; Захаров, Юрий Владимирович
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Zakharov, Yu. V.
Anisotropy of the magnetoresistance along and across domain-walls in a ferromagnet / Yu. V. Zakharov, Yu. I. Mankov, L. S. Titov // J. Phys. I. - 1991. - Vol. 1, Is. 5. - P. 759-764. - Cited References: 20 . - ISSN 1155-4304

РУБ Physics, Multidisciplinary
Рубрики:
SUPERCONDUCTIVITY
HOMO6S8
Аннотация: We discuss some peculiarities of the conduction electron motion in the vicinity of domain walls which lead to an anisotropy of the magnetoresistance. We also discuss the case of single crystals of ErRh4B4 and HoMo6S8 where magnetoresistance with the same qualitative features has been observed.

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Доп.точки доступа:
Mankov, Yu. I.; Маньков, Юрий Иннокентьевич; Titov, L. S.; Захаров, Юрий Владимирович
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Zakharov, Y. V.
Negative magnetoresistance of iron single-crystal whiskers in the course of magnetization reversal / Y. V. Zakharov, L. S. Titov // Phys. Solid State. - 2004. - Vol. 46, Is. 2. - P. 303-305, DOI 10.1134/1.1649428. - Cited References: 9 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
RESISTIVITY
WALLS
Аннотация: The change in the low-temperature resistance of iron single-crystal whiskers during magnetization reversal form a single-domain state to a state with a plane-parallel domain structure is studied theoretically. The negative magnetoresistance (similar to45%) is calculated from the Kubo formula with due regard for the change in the trajectories of conduction electrons in a magnetic induction field of domains. The magnetoresistance thus calculated is of the same order of magnitude as the magnetoresistance obtained in the experiment performed by Isin and Coleman.(C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660062, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Krasnoyarsk State University, Svobodnyi pr. 79, Krasnoyarsk 660062, Russian Federation

Доп.точки доступа:
Titov, L. S.
}
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Zakharov, Y. V.
Negative low-temperature magnetoresistance of a magnetically nonuniform compensated metal / Y. V. Zakharov, Y. I. Mankov, L. S. Titov // Fiz. Nizk. Temp. - 1986. - Vol. 12, Is. 4. - P. 408-416. - Cited References: 24 . - ISSN 0132-6414

РУБ Physics, Applied

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Доп.точки доступа:
Mankov, Y. I.; Маньков, Юрий Иннокентьевич; Titov, L.S.
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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Volkov, N. V.
Spintronics: manganite-based magnetic tunnel structures / N. V. Volkov // Phys. Usp. - 2012. - Vol. 55, Is. 3. - P. 250-269, DOI 10.3367/UFNe.0182.201203b.0263. - Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15). . - ISSN 1063-7869

РУБ Physics, Multidisciplinary
Рубрики:
HIGH-FREQUENCY RECTIFICATION
   THIN INSULATING FILM
   COLOSSAL MAGNETORESISTANCE
   GIANT MAGNETORESISTANCE
   ELECTRONIC-STRUCTURE
   SANDWICH STRUCTURES
   SPIN POLARIZATION
   IDENTICAL METALS
   PHASE-SEPARATION
   ROOM-TEMPERATURE
Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.

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Публикация на русском языке

Доп.точки доступа:
Волков, Никита Валентинович
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Val'kov, V. V.
Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase / V. V. Val'Kov, A. D. Fedoseev // Bull. Russ. Acad. Sci.: Phys. - 2013. - Vol. 77, Is. 3. - P. 349-351, DOI 10.3103/S1062873813030386 . - ISSN 1062-8738
Аннотация: The energy spectrum of mobile charge carriers in a two-dimensional Antiferromagnet placed in external magnetic field is analyzed. It is shown that allowing for the magnetic sublattice skew the effective mass of mobile charge carriers in a lightly doped Antiferromagnet. This affects substantially the transport and thermodynamic properties of the system. A insulator-semimetal transition is induced with external magnetic field. В© 2013 Allerton Press, Inc.

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Публикация на русском языке Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе. - [S. l. : s. n.]

Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Fedoseev, A. D.; Федосеев, Александр Дмитриевич; Вальков, Валерий Владимирович
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10.

Val'kov, V. V.
Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field / V. V. Val'kov, S. V. Aksenov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 2. - P. 266-275, DOI 10.1134/S1063776111060070. - Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation. . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
CONDUCTION
ANISOTROPY
JUNCTIONS
Кл.слова (ненормированные):
Antiferromagnetic coupling -- Colossal magnetoresistance effect -- IV characteristics -- Metallic contacts -- Potential profiles -- Spectral characteristics -- Spin dependent transport -- Spin dimer -- Spin moments -- Spin-dependent electron transport -- Spin-flip process -- Tight-binding approximations -- Transmission coefficients -- Antiferromagnetism -- Colossal magnetoresistance -- Current voltage characteristics -- Electric resistance -- Nanostructures -- Transport properties -- Magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.

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Держатели документа:
[Val'kov, V. V.
Aksenov, S. V.] Russian Acad Sci, Siberian Branch, Inst Phys, Krasnoyarsk 660036, Russia
[Val'kov, V. V.
Aksenov, S. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Val'kov, V. V.] Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Reshetnikov Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Aksenov, S. V.; Аксенов, Сергей Владимирович; Вальков, Валерий Владимирович
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11.

Val'kov, V. V.
Double exchange model in the problem of the colossal magnetoresistance manganites / V. V. Val'kov // Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics” / chairman G. A. Petrakovskii. - 2007. - P. 8
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.

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Доп.точки доступа:
Petrakovskii, G. A. \chairman\; Петраковский, Герман Антонович; Вальков, Валерий Владимирович; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; March 20-23 ; Krasnoyarsk)
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12.

Val'kov, V. V.
Double exchange model in the problem of the colossal magnetoresistance manganites / V. Val'kov // Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project "New Layered 3d-Materials for Spintronics" : (books of abstrats) : March 20-23, 2007 Krasnoyarsk, Russia. - Красноярск, 2007. - P. 8

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Доп.точки доступа:
Вальков Валерий Владимирович; "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project(2007 ; Marh ; Krasnoyarsk)Институт физики им. Л.В. Киренского Сибирского отделения РАН; ETH Zurich and Paul Scherrer Institute, Condensed Matter Research with Neutron and Muons Department; Institute of Physics of Polish Academy of Sciences; Институт неорганической химии им. А.В.Николаева СО РАН
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13.

Two-phase paramagnetic-ferromagnetic state of La0.7Pb0.3MnO3 single-crystal lanthanum manganite / N. V. Volkov [et al.] // Phys. Solid State. - 2002. - Vol. 44, Is. 7. - P. 1350-1354, DOI 10.1134/1.1494635. - Cited References: 17 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
COLOSSAL MAGNETORESISTANCE
   MAGNETIC-RESONANCE
   DOPED MANGANITES
   LA1-XCAXMNO3
   SEPARATION
   TRANSITION
   RELAXATION
   EPR
Аннотация: Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T-C in La0.7Pb0.3MnO3 single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10-78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study. (C) 2002 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Vasil'ev, V. N.; Sablina, K. A.; Саблина, Клара Александровна
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14.

Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2003. - Vol. 29, Is. 3. - P. 200-202, DOI 10.1134/1.1565633. - Cited References: 7 . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Krasnoyarsk State Univ, Krasnoyarsk, Russia
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Patrin, G. S.; Патрин, Геннадий Семёнович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Sablina, K. A.; Саблина, Клара Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
}
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15.

Transport properties of FeSi with cobalt impurities / G. Y. Yurkin [et al.] // TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - P493-496, DOI 10.4028/www.scientific.net/SSP.168-169.493 . - ISSN 1012-0394
Кл.слова (ненормированные):
iron monosilicide -- kondo effect -- magnetization -- resistivity -- spindependent scattering -- superparamagnetic cluster -- cobalt -- crystals -- electric resistance -- electron energy loss spectroscopy -- kondo effect -- magnetic field effects -- magnetic properties -- magnetization -- magnetoresistance -- scattering -- superparamagnetism -- transport properties -- cobalt -- electric conductivity -- electron scattering -- impurities -- kondo effect -- magnetism -- magnetization -- experimental investigations -- kondo models -- magnetoresistance properties -- resistivity -- si crystals -- spin dependent scattering -- superparamagnetic clusters -- crystal impurities -- crystal impurities
Аннотация: The results of experimental investigations of Fe1-xCo xSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.

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Держатели документа:
Kirensky Institute of Physics, SB, RAS, 660036, Krasnoyarsk, Russian Federation
Siberian Federal University, 660041, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Yurkin, G. Yu.; Юркин, Глеб Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Beletsky, V. V.
}
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16.

Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides / S. S. Aplesnin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 4. - P. 765-772, DOI 10.1134/S1063776108040158. - Cited References: 39 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GIANT VOLUME MAGNETOSTRICTION
   COLOSSAL MAGNETORESISTANCE
   MAGNETIC SEMICONDUCTORS
   ELECTRICAL-PROPERTIES
   ROOM-TEMPERATURE
   ALPHA-MNS
   SPINTRONICS
   TRANSITION
   FEXMN1-XS
   FIELDS
Кл.слова (ненормированные):
Coulomb interactions -- Current voltage characteristics -- Electromotive force -- Ferromagnetism -- Magnetic susceptibility -- Magnetization -- Thermoelectricity -- Transport properties -- Charge susceptibility -- External magnetic fields -- Temperature intervals -- Thermoelectromotive force -- Cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0 <= x <= 0.4). Anomalies in the transport properties of these compounds have been found in the temperature intervals Delta T-1 = 200-270 K and Delta T-2 = 530-670 K and at T-3 similar to T-N. The temperature dependences of the magnetic susceptibility, magnetization, and resistivity, as well as the current-voltage characteristics, exhibit hysteresis. In the domain of magnetic ordering at temperatures below the Neel temperature (TN), the anti ferromagnetic CoxMn1 - xS sulfides possess a spontaneous magnetic moment that is explained using a model of the orbital ordering of electrons in the t(2g) bands. The influence of the cobalt-ion-induced charge ordering on the transport and magnetic properties of sulfides has been studied. The calculated values of the temperatures corresponding to the maxima of charge susceptibility, which are related to a competition between the on-site Coulomb interaction of holes in various subbands and their weak hybridization, agree well with the experimental data.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Velikanov, D. A.
Balaev, A. D.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Aplesnin, S. S.
Bandurina, O. N.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Yanushkevich, K. I.
Galyas, A. I.
Demidenko, O. F.] Natl Acad Sci, Joint Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Yanushkevich, K. I.; Galyas, A. I.; Demidenko, O. F.; Bandurina, O. N.
}
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17.

Transport and magnetic phenomena in ZnO-С thin-film heterostructures / M. N. Volochaev, A. B. Granovsky, O. V. Zhilova [et al.] // Superlattices Microstruct. - 2020. - Vol. 140. - Ст. 106449, DOI 10.1016/j.spmi.2020.106449. - Cited References: 36. - The work was supported by the Ministry of Education and Science of Russia (project No. 3.1867.2017/4.6 ) and the RFBR (project No. 19-07-00471). The work was partially funded by the Academy of Finland . - ISSN 0749-6036
Кл.слова (ненормированные):
Zinc oxide -- Amorphous carbon -- Multi-layered structures -- Composites -- Hopping conductivity -- Weak localization -- Magnetoresistance
Аннотация: ZnO- and C-based heterostructures were fabricated by the layer-by-layer deposition technique using the ion-beam sputtering process. Structure, electrical and magnetic properties of fabricated heterostructures are discussed. The two-phase (ZnO and C) films are evolved into a multilayer structure, consisting of amorphous carbon and crystalline ZnO layers when the bilayer thickness increases. When carbon is added to ZnO, its electrical resistivity reduces. The conduction mechanism changes from the variable-range hopping in a narrow energy band to the nearest neighbors hopping in ZnO–C films with a thickness of h ˂ 150 nm. The temperature dependence of conductivity changes from the Arrhenius-like to logarithmic law, indicating that the strong charge localization turns into a weak one when the film thickness is about 150 nm. The negative magnetoresistance of up to 1% was detected at 77 K. The film ferromagnetism at the temperature of 10 K was not found.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk660036, Russian Federation
Lomonosov Moscow State University, Moscow119991, Russian Federation
Voronezh State Technical University, Voronezh394026, Russian Federation
National Research Centre ‘‘Kurchatov Institute”, Moscow123182, Russian Federation
Voronezh State University, Voronezh394003, Russian Federation
Lappeenranta-Lahti University of Technology, Lappeenranta FI53851, Finland

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Granovsky, A. B.; Zhilova, O. V.; Kalinin, Y. E.; Ryl'kov, V. V.; Sumets, M. P.; Makagonov, V. A.; Pankov, S. Y.; Sitnikov, A. V.; Fadeev, E.; Lahderanta, E.; Foshin, V.
}
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18.

Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films / L. Badía-Romano [et al.] // J. Magn. Magn. Mater. - 2014. - Vol. 364. - P. 24-33, DOI 10.1016/j.jmmm.2014.04.029. - Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza. . - ISSN 0304-8853. - ISSN 1873-4766

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPUTTERED FE/SI SUPERLATTICES
   INTERLAYER EXCHANGE
   GIANT MAGNETORESISTANCE
   MAGNETIC-PROPERTIES
   SILICIDE FORMATION
   EPITAXIAL-GROWTH
   ROOM-TEMPERATURE
   IRON DISILICIDE
   TRILAYER FILMS
   THIN-FILMS
Кл.слова (ненормированные):
Fe-Si multilayer -- Chemical transformation -- Fe silicide -- Interlayer exchange coupling -- Magnetic domain -- in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5
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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, Inst Nanociencia Aragon, Lab Microscopias Avanzadas, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Univ Porto, Fac Ciencias, Dept Fis Astron, IN IFIMUP, P-4169007 Oporto, Portugal
Univ Oviedo, Dept Fis, E-33007 Oviedo, Spain
Univ Oviedo Principado Asturias, CSIC, CINN, E-33007 Oviedo, Spain
Forschungszentrum Julich, Elect Properties, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Aerospace Univ, Krasnoyarsk 660014, Russia
Siberian Fed Univ, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Badía-Romano, L.; Rubín, J.; Magén, C.; Bartolomé, F.; Sesé, J.; Ibarra, M.R.; Bartolomé, J.; Hierro-Rodriguez, A.; Martín, J.I.; Alameda, J.M.; Bürgler, D.E.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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19.

Theory of spin filtering through quantum dots / J. . Fransson [et al.] // Phys. Rev. B. - 2003. - Vol. 67, Is. 20. - Ст. 205310, DOI 10.1103/PhysRevB.67.205310. - Cited References: 28 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
DEPENDENT TUNNELING JUNCTIONS
   NARROW ENERGY BANDS
   ELECTRON CORRELATIONS
   MAGNETORESISTANCE
   BARRIER
   POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.

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Держатели документа:
Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Fransson, J.; Holmstrom, E.; Eriksson, O.; Sandalov, I.
}
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20.

Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface / P. Avramov [et al.] // J. Phys. Chem. A. - 2017. - Vol. 121, Is. 3. - P. 680-689, DOI 10.1021/acs.jpca.6b09696. - Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team. . - ISSN 1089-5639

РУБ Chemistry, Physical + Physics, Atomic, Molecular & Chemical
Рубрики:
HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.

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Держатели документа:
Kyungpook Natl Univ, Dept Chem, 80 Daehak Ro, Daegu 41566, South Korea.
Kyungpook Natl Univ, Green Nano Mat Res Ctr, 80 Daehak Ro, Daegu 41566, South Korea.
Siberian Fed Univ, 79 Svobodniy Pr, Krasnoyarsk 660041, Russia.
LV Kirensky Inst Phys SB RAS, 50-38 Akademgorodok, Krasnoyarsk 660036, Russia.
Natl Inst Quantum & Radiol Sci & Technol QST, Naka, Ibaraki 3191106, Japan.
Natl Univ Sci & Technol MISiS, Moscow 119049, Russia.

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Kuklin, A. V.; Куклин, Артем Валентинович; Lee, H.; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Sakai, S.; Entani, S.; Naramoto, H.; Sorokin, P. B.; Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
}
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