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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Никитин, Станислав Евгеньевич, Попков, Сергей Иванович, Петров, Михаил Иванович, Терентьев, Константин Юрьевич, Семенов, Сергей Васильевич, Шайхутдинов, Кирилл Александрович
Заглавие : Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7
Коллективы : Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X; 13 - 14 ноября 2014 г.; Новосибирск)
Место публикации : Вестник НГУ. Физика: Новосибирский государственный университет, 2015. - Т. 10, Вып. 1. - С. 63-66. - ISSN 1818-7994
Примечания : Библиогр.: 8
Ключевые слова (''Своб.индексиров.''): манганиты лантана--положительное магнетосопротивление--manganite--positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Вальков, Валерий Владимирович, Федосеев, Александр Дмитриевич
Заглавие : Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе
Место публикации : Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389. - DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zakharov Yu. V., Mankov Yu. I.
Заглавие : Magnetoresistance of ferromagnets with domain-structure
Место публикации : Phys. Status Solidi B. - 1984. - Vol. 125, Is. 1. - P.197-205. - ISSN 0370-1972, DOI 10.1002/pssb.2221250122
Примечания : Cited References: 21
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zakharov Yu. V., Mankov Yu. I., Titov L. S.
Заглавие : Anisotropy of the magnetoresistance along and across domain-walls in a ferromagnet
Место публикации : J. Phys. I. - 1991. - Vol. 1, Is. 5. - P.759-764. - ISSN 1155-4304
Примечания : Cited References: 20
Предметные рубрики: SUPERCONDUCTIVITY
HOMO6S8
Аннотация: We discuss some peculiarities of the conduction electron motion in the vicinity of domain walls which lead to an anisotropy of the magnetoresistance. We also discuss the case of single crystals of ErRh4B4 and HoMo6S8 where magnetoresistance with the same qualitative features has been observed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zakharov Y. V., Titov L. S.
Заглавие : Negative magnetoresistance of iron single-crystal whiskers in the course of magnetization reversal
Разночтения заглавия :авие SCOPUS: Negative Magnetoresistance of Iron Single-Crystal Whiskers in the Course of Magnetization Reversal
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 2. - P303-305. - ISSN 1063-7834, DOI 10.1134/1.1649428
Примечания : Cited References: 9
Предметные рубрики: RESISTIVITY
WALLS
Аннотация: The change in the low-temperature resistance of iron single-crystal whiskers during magnetization reversal form a single-domain state to a state with a plane-parallel domain structure is studied theoretically. The negative magnetoresistance (similar to45%) is calculated from the Kubo formula with due regard for the change in the trajectories of conduction electrons in a magnetic induction field of domains. The magnetoresistance thus calculated is of the same order of magnitude as the magnetoresistance obtained in the experiment performed by Isin and Coleman.(C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zakharov Y. V., Mankov Y. I., Titov L.S.
Заглавие : Negative low-temperature magnetoresistance of a magnetically nonuniform compensated metal
Место публикации : Fiz. Nizk. Temp. - 1986. - Vol. 12, Is. 4. - P.408-416. - ISSN 0132-6414
Примечания : Cited References: 24
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V.
Заглавие : Spintronics: manganite-based magnetic tunnel structures
Место публикации : Phys. Usp.: Turpion LTD, 2012. - Vol. 55, Is. 3. - P.250-269. - ISSN 1063-7869, DOI 10.3367/UFNe.0182.201203b.0263
Примечания : Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15).
Предметные рубрики: HIGH-FREQUENCY RECTIFICATION
THIN INSULATING FILM
COLOSSAL MAGNETORESISTANCE
GIANT MAGNETORESISTANCE
ELECTRONIC-STRUCTURE
SANDWICH STRUCTURES
SPIN POLARIZATION
IDENTICAL METALS
PHASE-SEPARATION
ROOM-TEMPERATURE
Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Fedoseev A. D.
Заглавие : Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2013. - Vol. 77, Is. 3. - P.349-351. - ISSN 1062-8738, DOI 10.3103/S1062873813030386
Аннотация: The energy spectrum of mobile charge carriers in a two-dimensional Antiferromagnet placed in external magnetic field is analyzed. It is shown that allowing for the magnetic sublattice skew the effective mass of mobile charge carriers in a lightly doped Antiferromagnet. This affects substantially the transport and thermodynamic properties of the system. A insulator-semimetal transition is induced with external magnetic field. В© 2013 Allerton Press, Inc.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V.
Заглавие : Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 113, Is. 2. - P266-275. - ISSN 1063-7761, DOI 10.1134/S1063776111060070
Примечания : Cited References: 30. - This study was carried out under the program of the Physical Science Department of the Russian Academy of Sciences, Federal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia in 2009-2013," Interdisciplinary Integration project no. 53 of the Siberian Branch of the Russian Academy of Sciences, and under partial support from the Russian Foundation for Basic Research (project no. 09-02-00127). The research work of one of the authors (S.V.A) was supported by grant no. MK-1300.2011.2 from the President of the Russian Federation.
Предметные рубрики: CONDUCTION
ANISOTROPY
JUNCTIONS
Ключевые слова (''Своб.индексиров.''): antiferromagnetic coupling--colossal magnetoresistance effect--iv characteristics--metallic contacts--potential profiles--spectral characteristics--spin dependent transport--spin dimer--spin moments--spin-dependent electron transport--spin-flip process--tight-binding approximations--transmission coefficients--antiferromagnetism--colossal magnetoresistance--current voltage characteristics--electric resistance--nanostructures--transport properties--magnetic field effects
Аннотация: The transport properties and current-voltage (I-V) characteristics of a system of spin dimers with antiferromagnetic coupling arranged between metallic contacts are investigated in the tight binding approximation using the Landauer-Buttiker formalism. It is shown that the s-d(f) exchange interaction between the spin moments of the electrons being transported and the spins of the nanostructure leads to the formation of a potential profile as well as its variation due to spin-flip processes. As a result, the spin-dependent transport becomes inelastic, and the transmission coefficient and the I-V characteristic are strongly modified. It is found that the application of a magnetic field induces additional transparency peaks in the spectral characteristic of the system and causes the colossal magnetoresistance effect.
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Val'kov V. V.
Заглавие : Double exchange model in the problem of the colossal magnetoresistance manganites
Коллективы : "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project
Место публикации : Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics”/ chairman G. A. Petrakovskii. - 2007. - P.8
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.
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12.

13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Petrakovskii G. A., Vasil'ev V. N., Sablina K. A.
Заглавие : Two-phase paramagnetic-ferromagnetic state of La0.7Pb0.3MnO3 single-crystal lanthanum manganite
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2002. - Vol. 44, Is. 7. - P1350-1354. - ISSN 1063-7834, DOI 10.1134/1.1494635
Примечания : Cited References: 17
Предметные рубрики: COLOSSAL MAGNETORESISTANCE
MAGNETIC-RESONANCE
DOPED MANGANITES
LA1-XCAXMNO3
SEPARATION
TRANSITION
RELAXATION
EPR
Аннотация: Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T-C in La0.7Pb0.3MnO3 single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10-78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study. (C) 2002 MAIK "Nauka/Interperiodica".
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Patrin G. S., Petrakovskii G. A., Sablina K. A., Ovchinnikov S. G., Varnakov S. N.
Заглавие : Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure
Место публикации : Tech. Phys. Lett.: AMER INST PHYSICS, 2003. - Vol. 29, Is. 3. - P200-202. - ISSN 1063-7850, DOI 10.1134/1.1565633
Примечания : Cited References: 7
Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Yurkin G. Yu., Patrin G. S., Velikanov D. A., Beletsky V. V.
Заглавие : Transport properties of FeSi with cobalt impurities
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 493-496. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.493
Ключевые слова (''Своб.индексиров.''): iron monosilicide--kondo effect--magnetization--resistivity--spindependent scattering--superparamagnetic cluster--cobalt--crystals--electric resistance--electron energy loss spectroscopy--kondo effect--magnetic field effects--magnetic properties--magnetization--magnetoresistance--scattering--superparamagnetism--transport properties--cobalt--electric conductivity--electron scattering--impurities--kondo effect--magnetism--magnetization--experimental investigations--kondo models--magnetoresistance properties--resistivity--si crystals--spin dependent scattering--superparamagnetic clusters--crystal impurities--crystal impurities
Аннотация: The results of experimental investigations of Fe1-xCo xSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Granovsky A. B., Zhilova O. V., Kalinin Y. E., Ryl'kov V. V., Sumets M. P., Makagonov V. A., Pankov S. Y., Sitnikov A. V., Fadeev E., Lahderanta E., Foshin V.
Заглавие : Transport and magnetic phenomena in ZnO-С thin-film heterostructures
Место публикации : Superlattices Microstruct. - 2020. - Vol. 140. - Ст.106449. - ISSN 07496036 (ISSN), DOI 10.1016/j.spmi.2020.106449
Примечания : Cited References: 36. - The work was supported by the Ministry of Education and Science of Russia (project No. 3.1867.2017/4.6 ) and the RFBR (project No. 19-07-00471). The work was partially funded by the Academy of Finland
Аннотация: ZnO- and C-based heterostructures were fabricated by the layer-by-layer deposition technique using the ion-beam sputtering process. Structure, electrical and magnetic properties of fabricated heterostructures are discussed. The two-phase (ZnO and C) films are evolved into a multilayer structure, consisting of amorphous carbon and crystalline ZnO layers when the bilayer thickness increases. When carbon is added to ZnO, its electrical resistivity reduces. The conduction mechanism changes from the variable-range hopping in a narrow energy band to the nearest neighbors hopping in ZnO–C films with a thickness of h ˂ 150 nm. The temperature dependence of conductivity changes from the Arrhenius-like to logarithmic law, indicating that the strong charge localization turns into a weak one when the film thickness is about 150 nm. The negative magnetoresistance of up to 1% was detected at 77 K. The film ferromagnetism at the temperature of 10 K was not found.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubín J., Magén C., Bartolomé F., Sesé J., Ibarra M.R., Bartolomé J., Hierro-Rodriguez A., Martín J.I., Alameda J.M., Bürgler D.E., Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G.
Заглавие : Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 364. - P.24-33. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.04.029. - ISSN 1873-4766
Примечания : Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza.
Предметные рубрики: SPUTTERED FE/SI SUPERLATTICES
INTERLAYER EXCHANGE
GIANT MAGNETORESISTANCE
MAGNETIC-PROPERTIES
SILICIDE FORMATION
EPITAXIAL-GROWTH
ROOM-TEMPERATURE
IRON DISILICIDE
TRILAYER FILMS
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): fe-si multilayer--chemical transformation--fe silicide--interlayer exchange coupling--magnetic domain--in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5T800K). Films were prepared by thermal evaporation under ultrahigh vacuum onto a buffer layer of Fe/Ag deposited on a GaAs(001) substrate. Transmission electron microscopy reveals good epitaxial growth and phase transformations in the c-FeSi phase formed during deposition as well as upon subsequent annealing of the sample up to 800 K. Remanence to saturation magnetization MR/MS ratios and saturation fields are related to several types of interlayer exchange coupling. 90°-coupling and a superposition of 90° and antiferromagnetic interlayer exchange coupling are found depending on the Fe layer thickness. Magnetization curves were investigated as a function of temperature by in situ annealing. They show an irreversible thermal process as temperature increases from 300 to 450 K that is correlated to the formation of a ferromagnetic silicide phase. At higher temperature this phase transforms into a paramagnetic Fe–Si phase.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Holmstrom E., Eriksson O., Sandalov I.
Заглавие : Theory of spin filtering through quantum dots
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2003. - Vol. 67, Is. 20. - Ст.205310. - ISSN 1098-0121, DOI 10.1103/PhysRevB.67.205310
Примечания : Cited References: 28
Предметные рубрики: DEPENDENT TUNNELING JUNCTIONS
NARROW ENERGY BANDS
ELECTRON CORRELATIONS
MAGNETORESISTANCE
BARRIER
POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Kuklin A. V., Lee H., Kovaleva E. A., Sakai S., Entani S., Naramoto H., Sorokin P. B.
Заглавие : Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface
Коллективы : Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
Место публикации : J. Phys. Chem. A: American Chemical Society, 2017. - Vol. 121, Is. 3. - P.680-689. - ISSN 1089-5639, DOI 10.1021/acs.jpca.6b09696
Примечания : Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.
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