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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Dubrovskii A. A., Popkov S. I., Gokhfeld D. M., Semenov S. V., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Specific features in the hysteretic behavior of the magnetoresistance of granular high-temperature superconductors
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 54, Is. 11. - P.2155-2164. - ISSN 1063-7834, DOI 10.1134/S1063783412110030
Примечания : Cited References: 52. - This study was supported by the Russian Foundation for Basic Research within the framework of the Regional Competition SIBERIA (project no. 11-02-98007 r-sibir'_a).
Предметные рубрики: CURRENT-VOLTAGE CHARACTERISTICS
WEAK MAGNETIC-FIELDS
CRITICAL-CURRENT DENSITY
T-C SUPERCONDUCTORS
ANGULAR-DEPENDENCE
JOSEPHSON MEDIUM
TRANSPORT-PROPERTIES
CRITICAL-STATE
YBa2Cu3O7-DELTA
COMPOSITES
Аннотация: The behavior of the hysteresis of the magnetoresistance R(H) of granular high-temperature superconductors has been investigated under the conditions where the resistive response of the subsystem of grain boundaries close to saturation. The hysteretic dependences R(H) have been measured for Y1-xPrxBa2Cu3O7 samples at x = 0.11 and 0.04 with the transition temperatures T-C approximate to 85.5 and 91.0 K, respectively. The evolution of the field width of the hysteresis R(H) has been examined by varying the measuring current. The limit of the applicability has been established for the concept of the effective field in the intergranular medium, which was previously proposed for the description of the hysteretic behavior of the magnetoresistance R(H) and thermal magnetic prehistory of the granular high-temperature superconductors. In the studied samples, the approximation of the effective field in the intergranular medium is applicable until the magnetoresistance of the subsystem of grain boundaries exceeds (90 +/- 5)% of the maximum value.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykov A. A., Popkov S. I., Shaykhutdinov K. A., Sablina K. A.
Заглавие : Relaxation of magnetoresistance of single-crystalline (La0.5Eu0.5)0.7Pb0.3MnO3 in a pulsed magnetic field
Место публикации : Tech. Phys. Lett.: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 38, Is. 12. - P.1080-1082. - ISSN 1063-7850, DOI 10.1134/S1063785012120036
Примечания : Cited References: 8
Предметные рубрики: RESISTANCE
FILMS
Аннотация: The magnetoresistance (MR) of substituted lanthanum manganite (La0.5Eu0.5)(0.7)Pb0.3MnO3 has been measured in a pulsed magnetic field with amplitude H = 250 kOe at various temperatures. It is established that temperature dependence of the MR relaxation parameter tau(T) is correlated with temperature dependence of the electric resistance R(T). A mechanism of relaxation is proposed that is related to the relaxation of conducting and dielectric phases in the volume of a sample under the conditions of phase separation. It is shown that the behavior of tau is related to the number of phase boundaries in the volume.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mita Y., Kagayama T., Abramova G. M., Petrakovskii G. A., Sokolov V.V.
Заглавие : Metallic transition of the colossal magnetoresistance material FexMn1-xS (x= 0.18) under high pressure
Место публикации : J. Korean Phys. Soc. - 2013. - Vol. 63, Is. 3. - P.325-328. - ISSN 0374-4884, DOI 10.3938/jkps.63.325
Ключевые слова (''Своб.индексиров.''): metallization--mott insulator--pressure
Аннотация: A pressure-induced phase transition in the colossal magnetoresistance (CMR) material Fe0.18Mn0.82S was studied by using infrared (IR) reflection and X-ray diffraction (XRD) at pressures up to 40 GPa at room temperature. XRD shows that the crystal structure of this sample is a NaCl-type structure at ambient pressure, that a structural change starts around 17 GPa, and that a mixed phase mixed between the NaCl-type low-pressure phase and an unknown structure high pressure phase continues up to around 25 GPa. On the other hand, the IR reflectivity increases with increasing pressure from 15 GPa and becomes remarkably high around 20 GPa. The spectra do not show any changes from 30 GPa. From these results, we conclude that the phase transition of Fe0.18Mn0.82S at room temperature starts around 15 GPa and is completed around 30 GPa and that the high-pressure phase is not a band-overlapping semimetal but a true metal. В© 2013 The Korean Physical Society.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Popkov S. I., Shaykhutdinov K. A., Sablina K. A., Bykov A. A.
Заглавие : Relaxation of magnetoresistance of single-crystalline (La[[d]]0.5[[/d]]Eu[[d]]0.5[[/d]])[[d]]0.7[[/d]]Pb[[d]]0.3[[/d]]MnO[[d]]3[[/d]] in a pulse magnetic field
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 275. - ISBN 978-5-7444-3124-2
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Nikitin S. E., Krasikov A. A., Bykov A. A., Terent'yev K. Yu., Shaykhutdinov K. A., Popkov S. I.
Заглавие : Relaxation of magnetoresistance after pulsed magnetic field in single crystal La[[d]]0.75[[/d]]Ca[[d]]0.25[[/d]]MnO[[d]]3[[/d]]
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 284. - ISBN 978-5-7444-3124-2
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Photoinduced giant magnetoresistance in the Fe/SiO2/p-Si hybrid structure with a schottky barrier
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 322. - ISBN 978-5-7444-3124-2
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Baron F. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier
Коллективы : Russian Foundation for Basic Research [11-02-00367-a]; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures [20.8]; Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; Russian Ministry of Education and Science [N 02.G25.31.0043]
Место публикации : J. Appl. Phys.: American Institute of Physics, 2013. - Vol. 114, Is. 9. - Ст.093903. - P. - ISSN 0021-8979, DOI 10.1063/1.4819975
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 43, 85 and 102; Project of the Russian Ministry of Education and Science N 02.G25.31.0043.
Предметные рубрики: SPIN POLARIZATION
SPINTRONICS
SILICON
Аннотация: We report giant magnetoresistance (MR) effect that appears under the influence of optical radiation in common planar device built on Fe/SiO2/p-Si hybrid structure. Our device is made of two Schottky diodes connected to each other by the silicon substrate. Photo-induced MR is positive and the MR ratio reaches the values in excess of 10(4)%. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. To explain such unexpected behavior of the MR, one needs to take into account contribution of several physical mechanisms. The main contribution comes from the existence of localized interface states at the SiO2/p-Si interface, which provide the spots for the photo-current conduction by virtue of the sequential tunneling through them or thermal generation and optical excitation of mobile charges. External magnetic field changes the probability of these processes due to its effect on the energy states of the conduction centers. Two possible mechanisms that may be responsible for the observed dependence of magneto-resistance on the field polarity are discussed: the effect of the Lorentz force on moving carriers and spin splitting of electrons moving in the electrostatic potential gradient (Rashba effect). The most significant observation, in our opinion, is that the observed MR effect is seen exclusively in the subsystem of minority carriers transferred into non-equilibrium state by optical excitation. We suggest that building such magneto-sensitive devices based on this mechanism may set a stage for new types of spintronic devices to emerge. (C) 2013 AIP Publishing LLC.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Extremely large photoinduced magnetoresistance in the Fe/SiO2/p-Si hybrid structure
Коллективы : Joint European Conference on Magnetism (2013 ; August ; 25-30; Rhodes, Greece)
Место публикации : Joint Eur. Conf. on Magnetism: Book of abstracts. - 2013. - P.55
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Вальков, Валерий Владимирович, Федосеев, Александр Дмитриевич
Заглавие : Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе
Место публикации : Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389. - DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Fedoseev A. D.
Заглавие : Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2013. - Vol. 77, Is. 3. - P.349-351. - ISSN 1062-8738, DOI 10.3103/S1062873813030386
Аннотация: The energy spectrum of mobile charge carriers in a two-dimensional Antiferromagnet placed in external magnetic field is analyzed. It is shown that allowing for the magnetic sublattice skew the effective mass of mobile charge carriers in a lightly doped Antiferromagnet. This affects substantially the transport and thermodynamic properties of the system. A insulator-semimetal transition is induced with external magnetic field. В© 2013 Allerton Press, Inc.
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Patrin K. G., Yakovchuk V.Yu., Patrin G. S., Yarikov S. A.
Заглавие : Magnetism and magnetoresistance in NiFe/Bi/NiFe films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.439-442. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.439. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): antiferromagnetic interaction--bi spacer--hysteresis loop--interlayer coupling--magnetization--magnetoresistance--permalloy--trilayer films--antiferro-magnetic interactions--giant magnetoresistive--interlayer coupling--interlayer interactions--permalloy--spacer thickness--squid magnetometry--trilayer film--trilayers--antiferromagnetism--bismuth--giant magnetoresistance--hysteresis loops--magnetic materials--magnetic resonance--magnetization--magnetoresistance--electric resistance
Аннотация: Interlayer interactions in FeNi/Bi/FeNi trilayers have been experimentally studied. Based on the data of SQUID magnetometry and magnetic resonance investigations, it is shown that the interlayer interaction is determined by a bismuth spacer thickness and temperature. The giant magnetoresistive effect in the trilayer films has been discovered. В© (2012) Trans Tech Publications.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Yakovchuk V.Yu., Velikanov D. A., Patrin K. G., Yarikov S. A.
Заглавие : Interlayer interactions in FeNi/Bi/FeNi trilayers
Место публикации : Bull. Russ. Acad. Sci.: Phys.: Allerton Press, 2012. - Vol. 76, Is. 2. - P.177-179. - ISSN 1062-8738
Примечания : Cited References: 5. - This study was supported by the Russian Foundation for Basic Research, project no. 110200675a.
Ключевые слова (''Своб.индексиров.''): giant magnetoresistance effect--interlayer interactions--spacer thickness--squid magnetometry--trilayers--magnetic resonance--bismuth
Аннотация: Interlayer interactions in FeNi/Bi/FeNi films are studied experimentally. It is established by SQUID magnetometry and magnetic resonance investigations that the interlayer interaction in these films is determined by the bismuth spacer thickness and temperature. A giant magnetoresistance effect is observed in the investigated trilayers. © 2012 Allerton Press, Inc.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubín J., Magén C., Bartolomé F., Sesé J., Ibarra M.R., Bartolomé J., Hierro-Rodriguez A., Martín J.I., Alameda J.M., Bürgler D.E., Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G.
Заглавие : Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 364. - P.24-33. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.04.029. - ISSN 1873-4766
Примечания : Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza.
Предметные рубрики: SPUTTERED FE/SI SUPERLATTICES
INTERLAYER EXCHANGE
GIANT MAGNETORESISTANCE
MAGNETIC-PROPERTIES
SILICIDE FORMATION
EPITAXIAL-GROWTH
ROOM-TEMPERATURE
IRON DISILICIDE
TRILAYER FILMS
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): fe-si multilayer--chemical transformation--fe silicide--interlayer exchange coupling--magnetic domain--in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5T800K). Films were prepared by thermal evaporation under ultrahigh vacuum onto a buffer layer of Fe/Ag deposited on a GaAs(001) substrate. Transmission electron microscopy reveals good epitaxial growth and phase transformations in the c-FeSi phase formed during deposition as well as upon subsequent annealing of the sample up to 800 K. Remanence to saturation magnetization MR/MS ratios and saturation fields are related to several types of interlayer exchange coupling. 90°-coupling and a superposition of 90° and antiferromagnetic interlayer exchange coupling are found depending on the Fe layer thickness. Magnetization curves were investigated as a function of temperature by in situ annealing. They show an irreversible thermal process as temperature increases from 300 to 450 K that is correlated to the formation of a ferromagnetic silicide phase. At higher temperature this phase transforms into a paramagnetic Fe–Si phase.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V.
Заглавие : Spintronics: manganite-based magnetic tunnel structures
Место публикации : Phys. Usp.: Turpion LTD, 2012. - Vol. 55, Is. 3. - P.250-269. - ISSN 1063-7869, DOI 10.3367/UFNe.0182.201203b.0263
Примечания : Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15).
Предметные рубрики: HIGH-FREQUENCY RECTIFICATION
THIN INSULATING FILM
COLOSSAL MAGNETORESISTANCE
GIANT MAGNETORESISTANCE
ELECTRONIC-STRUCTURE
SANDWICH STRUCTURES
SPIN POLARIZATION
IDENTICAL METALS
PHASE-SEPARATION
ROOM-TEMPERATURE
Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Semenov S. V., Petrov M. I.
Заглавие : Correlation between magnetoresistance and magnetization hysteresis in a granular high-T C superconductor: Impact of flux compression in the intergrain medium
Место публикации : J. Supercond. Nov. Magn.: Springer, 2014. - Vol. 27, Is. 6. - P.1425-1429. - ISSN 1557-1939, DOI 10.1007/s10948-014-2491-6. - ISSN 1557-1947
Примечания : Cited References: 27
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTOR
JOSEPHSON MEDIUM
CRITICAL-STATE
YBA2CU3O7-DELTA
FIELDS
BEHAVIOR
HTSC
COMPOSITES
RESISTANCE
MOTION
Ключевые слова (''Своб.индексиров.''): granular superconductor--josephson medium--effective field--magnetoresistance--magnetization hysteresis
Аннотация: The correlation between experimental magnetic field dependences of magnetoresistance and magnetization hysteresis in granular YBa2Cu3O7 is established. Within the proposed approach, magnetoresistance is assumed to be determined by the effective field in the intergrain boundaries the ensemble of which is considered to be a Josephson medium. The effective field in the intergrain medium can be written in the form B (eff)(H)=H-4 pi M(H)x alpha, where alpha is the parameter of averaged demagnetizing factors of grains and the degree of flux compression. A comparison of experimental magnetoresistance R(H) and magnetization M(H) hysteresis dependences obtained at different external magnetic field sweep rates yields the value alpha similar to 10, which is caused by the flux compression between grains. The proposed model describes well most of the features of the magnetoresistance hysteresis in granular high-T (C) superconductors.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Udod L. V., Aplesnin S. S., Sitnikov M. N., Molokeev M. S.
Заглавие : Dielectric and electrical properties of polymorphic bismuth pyrostannate Bi2Sn2O7
Коллективы : Russian Foundation for Basic Research [09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, 14-12-00124]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 7. - P.1315-1319. - ISSN 1063-7834, DOI 10.1134/S1063783414070336. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, and 14-12-00124).
Предметные рубрики: STRONG MAGNETIC-FIELD
DOPED MANGANITES
MAGNETORESISTANCE
Bi2O3
Аннотация: The Bi2Sn2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic, has been synthesized for the first time by solid-phase synthesis. The dielectric and electrical properties of the compound have been studied in the temperature range 100 K ˂ T ˂ 500 K. Anomalies in the temperature dependences of the electrical resistivity and the permittivity (imaginary and real parts) have been found at both low and high temperatures. These features are explained in terms of the model of martensitic phase transitions.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Alekseichik E. A., Kobyakov A. V., Yushkov V. I.
Заглавие : Magnetic and electrical properties of Co/Ge bilayer films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.348-351. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.348. - ISSN 1662-9779
Примечания : Cited References: 8
Ключевые слова (''Своб.индексиров.''): bilayer structure ferromagnetic metal/semiconductor--cobalt--coercivity--germanium interface--magnetization--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Gustajcev A. O., Volkova O. N., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Giant magnetoresistance in Fe/SiO2/p-Si hybrid structure under non-equilibrium conditions
Коллективы : Presidium of the Russian Academy of Sciences [20.8]; Division of Physical Sciences of the Russian Academy of Sciences [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; RF Ministry for Education and Science [02.G25.31.0043]; Russian Foundation of Basic Research [14-02-00234, 14-02-31156]
Место публикации : Trans. Nonferrous Met. Soci. China: Elsevier Science, 2014. - Vol. 24, Is. 10. - P.3158–3163. - DOI 10.1016/S1003-6326(14)63455-5
Примечания : Cited References: 12. - This study was supported by the Presidium of the Russian Academy of Sciences (project No. 20.8); the Division of Physical Sciences of the Russian Academy of Sciences (project No. II.4.3); the Siberian Branch of the Russian Academy of Sciences (integration projects Nos. 43, 85 and 102); the RF Ministry for Education and Science (project No. 02.G25.31.0043); and the Russian Foundation of Basic Research (projects Nos. 14-02-00234, 14-02-31156).
Предметные рубрики: Metallurgy & Metallurgical Engineering
Ключевые слова (''Своб.индексиров.''): magnetoresistance--hybrid structure--schottky diode
Аннотация: The giant magnetoresistive (MR) effect was investigated in a simple Fe/SiO2/p-Si-hybrid-structure-based device from two back-to-back Schottky diodes. The effect was revealed only under the non-equilibrium conditions caused by optical radiation. It is demonstrated that the magnetoresistance ratio attains 100 or more. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. It is important that the magnetoresistive effect is implemented exclusively in the subsystem of minority charge carriers transferred to the non-equilibrium states. The development of magneto-sensitive devices of this type can give grounds for a novel direction of semiconductor spintronics.
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20.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Gustaitsev A. O., Volkova O. N., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Giant magnetoresistance in Fe/SiO2/p-Si hybrid structure under non-equilibrium conditions
Коллективы : China-Russia Symposium on Advaced Materials and Technologies (12; 2013 ; Nov. 18-22; Kunming, China)
Место публикации : Adv. metals, ceramics and composites: 12th China-Russia Symposium on Advaced Materials and Technologies. - 2013. - Pt. 2. - P.216-219: Proceedings. - ISBN 978-7-5415-7650-5
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