Поисковый запрос: (<.>K=Nanostructure<.>) |
Общее количество найденных документов : 15
Показаны документы с 1 по 10 |
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1.
| Gavrichkov V. A. Superexchange in 2D perovskite HTSC with stripe nanostructure/V. A. Gavrichkov // International conference "Functional materials". -Simferopol, 2021.-С.223-2224
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| Effect of calcination temperature on activity of Fe2O3-Al2O3 nanocomposite catalysts in CO oxidation/A. M. Kremneva, A. V. Fedorov, O. A. Bulavchenko [et al.] // Catalysis Letters, 2020. т.Vol. 150.-С.3377-3385
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3.
| Magnetoimpedance Effect in a SOI-Based Structure/D. A. Smolyakov [et al.] // Semiconductors, 2019. т.Vol. 53,N Is. 14.-С.98-100
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| Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field/V. V. Val'Kov, S. V. Aksenov // JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS. -NEW YORK:MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. т.Vol. 113,N Is. 2.-С.266-275
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| Oreshonkov A. S. Phonon dynamics in MoSi2N4: insights from DFT calculations/A. S. Oreshonkov, E. V. Sukhanova, Z. I. Popov // Physical Chemistry Chemical Physics, 2023. т.Vol. 25,N Is. 43.-С.29831-29841
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| Сверхвысоковакуумная установка для получения и исследования наноструктур магнитоэллипсометрическими методами in situ/Н. Н. Косырев, Д. А. Шевцов [и др.] // Решетневские чтения. -Красноярск, 2010. т.Ч. 2.-С.582-583
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| Fano mechanism of the giant magnetoresistance formation in a spin nanostructure arXiv: 1109.0391 vl. - /Val'kov V.V., Aksenov S.V.
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| Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures/I. A. Bondarev [et al.] // Semiconductors, 2019. т.Vol. 53,N Is. 14.-С.88-92
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| Val'kov V. V. Effects of inelastic spin-dependent electron transport through a spin nanostructure in a magnetic field/V. V. Val'kov, S. V. Aksenov // JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS:MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. т.Vol. 113,N Is. 2.-С.266-275
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10.
| Spin states of 2D nanocomposites of Ni and V nanoclusters on hexagonal h-BN, BC3 and graphene/P. Avramov [et al.] // Journal of Materials Science & Technology, 2015. т.Vol. 31,N Is. 10.-С.979-985
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