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1.


    Altunin, R. R.
    Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460
РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION

   AG

   AL

   DIFFUSION

   SUPPRESSION

   INTERFACE

   SURFACE

   GROWTH

   HEAT

Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
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2.


   
    Anomalous resistivity and the electron-polaron effect in the two- band Hubbard model with one narrow band / Kagan M.Yu., Val'kov V.V. // arXiv. - 2011. - Ст. 1111.3135


Доп.точки доступа:
Kagan, M.Yu.; Val'kov, V. V.; Вальков, Валерий Владимирович
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3.


   
    Anomalous Resistivity and the Origin of Heavy Mass in the Two-Band Hubbard Model with One Narrow Band / M. Yu. Kagan, V. V. Val'kov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 1. - P156-171, DOI 10.1134/S1063776111060021. - Cited Reference Count: 87. - RFBRRussian Foundation for Basic Research (RFBR) [08-02-00224, 08-02-00212]; Leverhulme trustLeverhulme Trust; CNRSCentre National de la Recherche Scientifique (CNRS)European Commission [236694], We are grateful to A. S. Alexandrov, A. F. Andreev, A. F. Barabanov, M. A. Baranov, Yu. Bychkov, A. V. Chubukov, D. V. Efremov, P. Fulde, A. S. Hewson, Yu. Kagan, K. A. Kikoin, K. I. Kugel, F. V. Kusmartsev, M. Mezard, Yu. E. Lozovik, P. Nozieres, N. V. Prokof'ev, A. L. Rakhmanov, T. M. Rice, A. O. Sboychakov, G. V. Shlyapnikov, P. Thalmeyer, C. M. Varma, D. Vollhardt, P. Woelfle, and A. Yaresko for the numerous simulating discussions on this subject and acknowledge financial support of the RFBR grants nos. 08-02-00224, 08-02-00212. M. Yu. K. is also grateful to Loughborough University (UK) and LPTMS (Orsay, France) for the hospitality during the final stage of this work and acknowledges financial support from the Leverhulme trust and CNRS (contract no. 236694). . - JUL. - ISSN 1063-7761. - ISSN 1090-6509
Рубрики:
Physics, Multidisciplinary
Аннотация: We search for marginal Fermi-liquid behavior [1] in the two-band Hubbard model with one narrow band. We consider the limit of low electron densities in the bands and strong intraband and interband Hubbard interactions. We analyze the influence of electron polaron effect [2] and other mechanisms of mass enhancement (related to momentum dependence of the self-energies) on the effective mass and scattering times of light and heavy components in the clean case (electron-electron scattering and no impurities). We find the tendency towards phase separation (towards negative partial compressibility of heavy particles) in the 3D case for a large mismatch between the densities of heavy and light bands in the strong-coupling limit. We also observe that for low temperatures and equal densities, the homogeneous state resistivity R(T) similar to T-2 behaves in a Fermi-liquid fashion in both 3D and 2D cases. For temperatures higher than the effective bandwidth for heavy electrons T W-h*, the coherent behavior of the heavy component is totally destroyed. The heavy particles move diffusively in the surrounding of light particles. At the same time, the light particles scatter on the heavy ones as if on immobile (static) impurities. In this regime, the heavy component is marginal, while the light one is not. The resistivity saturates for T W-h* in the 3D case. In 2D, the resistivity has a maximum and a localization tail due to weak-localization corrections of the Altshuler-Aronov type [3]. Such behavior of resistivity could be relevant for some uranium-based heavy-fermion compounds like UNi2Al3 in 3D and for some other mixed-valence compounds possibly including layered manganites in 2D. We also briefly consider the superconductive (SC) instability in the model. The leading instability is towards the p-wave pairing and is governed by the enhanced Kohn-Luttinger [4] mechanism of SC at low electron density. The critical temperature corresponds to the pairing of heavy electrons via polarization of the light ones in 2D.

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Держатели документа:
Kapitza Inst Phys Problems, Moscow 119334, Russia;
Kirenskii Inst Phys, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Kagan, M. Yu.; Val'kov, V. V.; Вальков, Валерий Владимирович
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4.


   
    Conductivity study of Co3O2BO3 and Co 3-xFexO2BO3 oxyborates / N. V. Kazak [et al.] // Solid State Phenomena. - 2009. - Vol. 152-153. - P104-107, DOI 10.4028/www.scientific.net/SSP.152-153.104 . - ISSN 1012-0394
Кл.слова (ненормированные):
Doped cobaltite -- Electrical conductivity -- Ludwigite -- Variable-range hopping -- Crystal structure -- Electric conductivity -- Magnetic materials -- Single crystals -- Crystal structure -- Electric conductivity -- Magnetic materials -- Magnetism -- Single crystals -- Electrical conductivity -- Electrical resistivity -- Experimental data -- Mott variable-range hopping -- Oxyborates -- Temperature regions -- Variable-range hopping -- Doped cobaltite -- Ludwigite -- Variable range hopping -- Cobalt -- Cobalt
Аннотация: Single crystals of cobalt oxyborates Co3O2BO 3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O 2BO3 Mott's variable-range hopping conductivity clearly dominates.

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Держатели документа:
L.V. Kirensky Institute of Physics, SB of RAS, 660036, Akademgorodok, Krasnoyarsk, Russian Federation
Politechnical Institute, Siberian Federal University, Kirensky str. 26, 660074 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Ivanova, N. B.; Иванова, Наталья Борисовна; Rudenko, V. V.; Руденко, Валерий Васильевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Vasil'Ev, A. D.; Васильев, Александр Дмитриевич; Knyazev, Yu. V.; Князев, Юрий Владимирович; Moscow International Symposium on Magnetism(4 ; 2008 ; Jun. ; Moscow)
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5.


   
    Dielectric properties of a mixed-valence Pb3Mn7O15 manganese oxide / N. V. Volkov [et al.] // J. Phys.: Condens. Matter. - 2010. - Vol. 22, Is. 37. - Ст. 375901, DOI 10.1088/0953-8984/22/37/375901. - Cited References: 14. - This study was supported by the Russian Foundation for Basic Research 'Siberia', project No. 09-02-98003, and the Siberian Branch of the Russian Academy of Sciences, integration project No. 101. . - ISSN 0953-8984
РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
cation -- lead -- manganese derivative -- oxide -- article -- chemical model -- chemistry -- crystallization -- electric conductivity -- electronics -- methodology -- temperature -- Cations -- Crystallization -- Electric Conductivity -- Electronics -- Lead -- Manganese Compounds -- Models, Chemical -- Oxides -- Temperature -- AC electric field -- Analysis of resistivity -- Carrier hopping -- Charge ordering -- Complex dielectric constant -- Crystal site -- Debye models -- Dielectric constants -- Dielectric spectra -- Frequency windows -- Lattice sites -- Low frequency -- Manganese ions -- Mixed valence -- Mixed valence state -- Relaxation behaviors -- Temperature range -- Electric fields -- Manganese -- Manganese oxide -- Permittivity -- Single crystals -- Crystal symmetry
Аннотация: We investigated the low-frequency dielectric properties of a Pb3Mn7O15 single crystal with manganese ions in the mixed-valence state (Mn3+/Mn4+). Dielectric relaxation was found in the frequency window from 20 to 100 kHz in the temperature range 110-180 K. The dielectric spectra of the crystal were analyzed using a Debye model. Estimations made within the model and analysis of resistivity data suggest that the relaxation behavior of the dielectric constant is related to polaronic charge carrier hopping. Around 250 K, charge ordering occurs in the crystal when the Mn3+ and Mn4+ ions are arranged in a specific order among the crystal sites. With a decrease in temperature, an ac electric field can induce a charge hop between the equivalent lattice sites available, related to crystal symmetry. This hopping is equivalent to the reorientation of an electric dipole that yields Debye-type behavior of the complex dielectric constant. The observed anisotropy in the behavior of the dielectric properties and resistivity can be attributed to a pronounced two-dimensional character of the crystal structure.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Sablina, K. A.
Sapronova, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia.
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Sablina, K. A.; Саблина, Клара Александровна; Sapronova, N. V.
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6.


    Drokin, N. A.
    Static and dynamic characteristics of the bulk and contact electric resistivity in CDCR2SE4 under stochastic current instability / N. A. Drokin, S. M. Ganiev // Fiz. Tverd. Tela. - 1992. - Vol. 34, Is. 7. - P. 2122-2128. - Cited References: 21 . - ISSN 0367-3294
РУБ Physics, Condensed Matter
Рубрики:
OSCILLATIONS
   CHAOS

   GE


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Доп.точки доступа:
Ganiev, S. M.; Дрокин, Николай Александрович
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7.


   
    Effect of Mn doping on magnetic and dielectric properties of Bi2Sn2O7 / L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 105-108, DOI 10.4028/www.scientific.net/SSP.233-234.105 . - ISSN 1662-9779. - ISSN 978-3-038
Рубрики:
Achievements in magnetism
Кл.слова (ненормированные):
crystallographic structure -- cubic phase -- dielectric permeability -- electrical resistivity -- magnetic moment -- martensitic phase transitions -- orthorhombic phases -- polymorphic transformation
Аннотация: The Bi2(Sn0.95Mn0.05)2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic has been synthesized for the first time by solid-phase synthesis. The magnetic, dielectric and electrical properties of the compound have been studied. Anomalies in the temperature dependences of the electrical resistance and magnetic propoties have been found. These features are explained as martensitic phase transitions.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Eremin, E. V.; Еремин, Евгений Владимирович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
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8.


   
    Electrical and dielectrical propeties of gas-sensor resistive type Bi2Sn2O7 / L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 503-506, DOI 10.4028/www.scientific.net/SSP.215.503. - Cited References: 14. - This work was supported by the Russian Foundation for Basic Research projects no. 12-02-00125-а . - ISSN 978-30383. - ISSN 1662-9779
   Перевод заглавия: Электрические и диэлектрические свойства резистивного типа газовых сенсоров на основе Bi2Sn2O7
Кл.слова (ненормированные):
crystallographic structure -- polymorphic transformations -- electrical resistivity -- dielectric permeability
Аннотация: Polycrystalline samples of Bi2Sn2O7 have been synthesized by conventional solid-state reaction method. According to the X-ray powder diffraction research, our sample co-existing of two polymorphs phases: cubic and rhombic, concurrently. The real dielectric permeability Re (ε) monotonic grows versus temperature and the imaginary dielectric permeability Im (ε) nonmonotonic is increased at the heating. There are maxima at Т=450 K on both temperature dependences Im (ε) and Re (ε) reveal. Anomalies in the temperature dependence of electrical resistivity at temperatures are found and to be correlated with the α → β structural phase transition temperature.

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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Sitnicov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
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9.


   
    Electronic Structure of p-Type La1-xMx2+MnO3 Manganites in the Ferromagnetic and Paramagnetic Phases in the LDA plus GTB Approach / V. A. Gavrichkov [et al.] // J. Exp. Theor. Phys. - 2011. - Vol. 112, Is. 5. - P. 860-876, DOI 10.1134/S1063776111030101. - Cited References: 47. - This study was supported financially by integration project no. 40 of the Ural and Siberian Branches of the Russian Academy of Sciences, the program "Strong Electron Correlations" of the Russian Academy of Sciences, and the Russian Foundation for Basic Research (project no. 10-02-00251-a). . - ISSN 1063-7761
РУБ Physics, Multidisciplinary
Рубрики:
DOUBLE-EXCHANGE
   COLOSSAL MAGNETORESISTANCE

   THIN-FILMS

   PHYSICS

   LA1-XSRXMNO3

   RESISTIVITY

   SEPARATION

   TRANSPORT

   MODEL

Кл.слова (ненормированные):
Complex structure -- Cubic materials -- Ferromagnetic phase -- Half metals -- Jahn Teller effect -- Metal properties -- Metal types -- Orbitals -- P-type -- Paramagnetic phase -- Paramagnetic phasis -- Quasi particles -- Spectral intensity -- Spin projections -- Strong electron correlations -- Barium -- Density functional theory -- Electron correlations -- Electron density measurement -- Electronic properties -- Electronic structure -- Fermi level -- Ferromagnetic materials -- Ferromagnetism -- Manganese oxide -- Manganites -- Paramagnetic materials -- Paramagnetism -- Valence bands -- Lanthanum
Аннотация: The band structure, spectral intensity, and position of the Fermi level in doped p-type La1-xMx2+ MnO3 manganites (M = Sr, Ca, Ba) is analyzed using the LDA + GBT method for calculating the electronic structure of systems with strong electron correlations, taking into account antiferro-orbital ordering and using the Kugel-Khomskii ideas and real spin S = 2. The results of the ferromagnetic phase reproduce the state of a spin half-metal with 100% spin polarization at T = 0, when the spectrum is of the metal type for a quasiparticle with one spin projection and of the dielectric type for the other. It is found that the valence band becomes approximately three times narrower upon a transition to the paramagnetic phase. For the paramagnetic phase, metal properties are observed because the Fermi level is located in the valence band for any nonzero x. The dielectrization effect at the Curie temperature is possible and must be accompanied by filling of d(x) orbitals upon doping. The effect itself is associated with strong electron correlations, and a complex structure of the top of the valence band is due to the Jahn-Teller effect in cubic materials. DOI: 10.1134/S1063776111030101

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Публикация на русском языке Электронная структура манганитов La[1-x]M[x]2+MnO[3] p-типа в ферромагнитной и парамагнитной фазах в рамках LDA+GTB-подхода [Текст] / В. А. Гавричков [и др.] // Журнал экспериментальной и теоретической физики. - 2011. - Т. 139 Вып. 5. - С. 983-1000

Держатели документа:
[Gavrichkov, V. A.
Ovchinnikov, S. G.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Gavrichkov, V. A.
Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Nekrasov, I. A.] Russian Acad Sci, Ural Branch, Inst Electrophys, Ekaterinburg 620016, Russia
[Pchelkina, Z. V.] Russian Acad Sci, Ural Branch, Inst Met Phys, Ekaterinburg 620990, Russia
ИФ СО РАН
Siberian Branch, Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Ural Branch, Institute of Electrophysics, Russian Academy of Sciences, Yekaterinburg, 620016, Russian Federation
Ural Branch, Institute of Metal Physics, Russian Academy of Sciences, Yekaterinburg, 620990, Russian Federation

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nekrasov, I. A.; Pchelkina, Z. V.
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10.


   
    Electrophysical properties of BeO + 30 wt.% TiO2 ceramics sintered at elevated temperatures / N. A. Drokin, V. S. Kiiko, A. I. Malkin, A. V. Pavlov // Refract. Ind. Ceram. - 2022. - Vol. 63, Is. 3. - P. 315-320, DOI 10.1007/s11148-022-00728-3. - Cited References: 11 . - ISSN 1083-4877. - ISSN 1573-9139
Кл.слова (ненормированные):
(BeO + TiO2) ceramics -- electrophysical properties -- activation energy of electrical resistivity -- impedance spectroscopy -- dielectric permittivity -- TiO2 nanopowder
Аннотация: The electrophysical properties of BeO-based ceramics with introduced micro- and nanoparticles of TiO2 were investigated by impedance spectroscopy in the frequency range of 100 Hz – 100 MHz. In order to increase the density and conductivity, the initial ceramic components were sintered at the highest possible temperatures up to 1660°C, followed by annealing in hydrogen at 800°C. In this case, TiO2 was strongly reduced with the formation of lower titanium oxides (Ti3O5) along with metallic titanium. When interacting with hydrogen, TiH2 is formed. For the first time, impurity phases were found in (BeO + TiO2) ceramics, which can significantly alter its bulk and surface properties. The resulting ceramics has a high reach-through conductivity, which increases significantly after an additional thermal annealing in hydrogen. It was established that the activation energy of conductivity does not depend much on the concentration of TiO2 nanoparticles and decreases significantly in the low-temperature region. The method of constructing equivalent electrical circuits was used to simulate the passage of the active and reactive components of the current through the complex internal structure of the ceramics.

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Публикация на русском языке Электрофизические свойства спеченной при повышенных температурах керамики BeO + 30 мас. % TiO2 [Текст] / Н. А. Дрокин, В. С. Кийко, А. И. Малкин, А. В. Павлов // Нов. огнеупоры. - 2022. - № 6. - С. 21-27

Держатели документа:
Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia
Ural Federal University, Yekaterinburg, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Drokin, N. A.; Дрокин, Николай Александрович; Kiiko, V. S.; Malkin, A. I.; Pavlov, A. V.
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