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Gavrichkov, V. A.
An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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Kagan, M. Y.
Anomalous resistivity and superconductivity in the two-band Hubbard model with one narrow band (Review) / M. Y. Kagan, V. V. Valkov // Low Temp. Phys. - 2011. - Vol. 37, Is. 1. - P. 69-82 ; Физика низких температур, DOI 10.1063/1.3552118. - Cited References: 62. - We thank A.S. Alexandrov, A.F. Andreev, M.A. Baranov, Yu. Bichkov, A.V. Chubukov, D.V. Efremov, A.S. Hewson, K.A. Kikoin, F.V. Kusmartsev, P. Nozieres, T.M. Rice, A.O. Sboychakov, P. Thalmeer, C.M. Varma, D. Vollhardt, P. Woelfle, A. Yaresko and, especially, P. Fulde, Yu. Kagan, K.I. Kugel, and N.V. Prokof'ev for many simulating discussions on this subject and acknowledge the financial support of RFBR grants # 08-02-00224 and 08-02-00212. M.Yu.K. is also grateful to the Leverhulme trust for a grant to visit Loughborough University, where this work was completed. . - ISSN 1063-777X

РУБ Physics, Applied
Рубрики:
FERMI-LIQUID BEHAVIOR
   MAGNETIC-ALLOYS
   HEAVY
   DENSITY
   SYSTEMS
   STATE
   UPT3
   MECHANISM
   PARTICLE
   VALENCE
Аннотация: We search for marginal Fermi-liquid behavior in the two-band Hubbard model with one narrow band. We consider the limit of low electron densities in the bands and strong intraband and interband Hubbard interactions. We analyze the influence of electron-polaron effects and other mechanisms for mass-enhancement (related to the momentum dependence of the self-energies) on the effective mass and scattering times of light and heavy components in the clean case (electron-electron scattering and no impurities). We find a tendency towards phase separation (towards negative partial compressibility of heavy particles) in the 3D case with a large mismatch between the densities of heavy and light bands in the strong coupling limit. We also find that for low temperatures and equal densities, the resistivity in a homogeneous state R(T) proportional to T-2 behaves as a Fermi-liquid in both 3D and 2D. For temperatures greater than the effective bandwidth for heavy electrons T W-h*, the coherence of the heavy component breaks down completely. The heavy particles move diffusively in the surrounding light particles. At the same time, light particles scatter on heavy particles as if on immobile (static) impurities. Under these conditions, the heavy component is marginal, while the light component is not. The resistivity approaches saturation for T W-h* in the 3D case. In 2D the resistivity has a maximum and a localization tail owing to weak-localization corrections of the Altshuler-Aronov type. This behavior of resistivity in 3D could be relevant for some uranium-based heavy-fermion compounds such as UNi2Al3 and in 2D, for some other mixed-valence compounds, possibly including layered manganites. We also consider briefly the superconductive (SC) instability in this model. The leading instability tends to p-wave pairing and is governed by an enhanced Kohn-Luttinger mechanism for SC at low electron densities. The critical temperature corresponds to the pairing of heavy electrons via polarization of the light electrons in 2D. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552118]

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Держатели документа:
[Kagan, M. Yu.] Russian Acad Sci, PL Kapitza Phys Problems Inst, Moscow 119334, Russia
[Valkov, V. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
P.L.Kapitza Institute for Physical Problems of the Russian Academy of Sciences, 2 Kosygin St., Moscow 119334, Russian Federation
Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Valkov, V. V.; Вальков, Валерий Владимирович

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Anomalous resistivity and the electron-polaron effect in the two- band Hubbard model with one narrow band / Kagan M.Yu., Val'kov V.V. // arXiv. - 2011. - Ст. 1111.3135

Доп.точки доступа:
Kagan, M.Yu.; Val'kov, V. V.; Вальков, Валерий Владимирович
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Kagan, M. Y.
Anomalous resistivity and the electron-polaron effect in the two-band hubbard model with one narrow band / M. Y. Kagan, V. V. Val'kov // J. Supercond. Nov. Magn. - 2012. - Vol. 25, Is. 5. - P. 1379-1382, DOI 10.1007/s10948-012-1523-3. - Cited References: 28. - We are grateful to P. Fulde, Yu. Kagan, K. I. Kugel, N.V. Prokof'ev, P. Nozieres, and C. M. Varma for the numerous stimulating discussions. We acknowledge financial support of the RFBR Grant No. 11-02-00741. . - ISSN 1557-1939

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
FERMI GAS
   SUPERCONDUCTIVITY
   SUPERFLUIDITY
   TEMPERATURE
   REPULSION
   SYSTEMS
Кл.слова (ненормированные):
Electron-polaron effect -- Two-band Hubbard model -- Marginality -- Anomalous resistivity
Аннотация: We search for anomalous normal and superconductive behavior in the two-band Hubbard model with one narrow band. We analyze the influence of the electron–polaron effect and the Altshuler–Aronov effect on effective mass enhancement and scattering times of heavy and light components in the clean case. We find anomalous behavior of resistivity at high temperatures T>W∗hT > W_{h}^{*} both in 3D and 2D situations. The SC instability in the model is governed by an enhanced Kohn–Luttinger effect for p-wave pairing of heavy electrons via polarization of light electrons.

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Держатели документа:
[Kagan, M. Y.] PL Kapitza Inst Phys Problems, Moscow 119334, Russia
[Val'kov, V. V.] Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
P.L. Kapitza Institute for Physical Problems, Kosygina st. 2, 119334 Moscow, Russian Federation
Kirenskii Institute of Physics, Akademgorodok 50, Building 38, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Val'kov, V. V.; Вальков, Валерий Владимирович; Каган, Максим Юрьевич
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Anomalous Resistivity and the Origin of Heavy Mass in the Two-Band Hubbard Model with One Narrow Band / M. Yu. Kagan, V. V. Val'kov // J. Exp. Theor. Phys. - 2011. - Vol. 113, Is. 1. - P156-171, DOI 10.1134/S1063776111060021. - Cited Reference Count: 87. - RFBRRussian Foundation for Basic Research (RFBR) [08-02-00224, 08-02-00212]; Leverhulme trustLeverhulme Trust; CNRSCentre National de la Recherche Scientifique (CNRS)European Commission [236694], We are grateful to A. S. Alexandrov, A. F. Andreev, A. F. Barabanov, M. A. Baranov, Yu. Bychkov, A. V. Chubukov, D. V. Efremov, P. Fulde, A. S. Hewson, Yu. Kagan, K. A. Kikoin, K. I. Kugel, F. V. Kusmartsev, M. Mezard, Yu. E. Lozovik, P. Nozieres, N. V. Prokof'ev, A. L. Rakhmanov, T. M. Rice, A. O. Sboychakov, G. V. Shlyapnikov, P. Thalmeyer, C. M. Varma, D. Vollhardt, P. Woelfle, and A. Yaresko for the numerous simulating discussions on this subject and acknowledge financial support of the RFBR grants nos. 08-02-00224, 08-02-00212. M. Yu. K. is also grateful to Loughborough University (UK) and LPTMS (Orsay, France) for the hospitality during the final stage of this work and acknowledges financial support from the Leverhulme trust and CNRS (contract no. 236694). . - JUL. - ISSN 1063-7761. - ISSN 1090-6509
Рубрики:
Physics, Multidisciplinary
Аннотация: We search for marginal Fermi-liquid behavior [1] in the two-band Hubbard model with one narrow band. We consider the limit of low electron densities in the bands and strong intraband and interband Hubbard interactions. We analyze the influence of electron polaron effect [2] and other mechanisms of mass enhancement (related to momentum dependence of the self-energies) on the effective mass and scattering times of light and heavy components in the clean case (electron-electron scattering and no impurities). We find the tendency towards phase separation (towards negative partial compressibility of heavy particles) in the 3D case for a large mismatch between the densities of heavy and light bands in the strong-coupling limit. We also observe that for low temperatures and equal densities, the homogeneous state resistivity R(T) similar to T-2 behaves in a Fermi-liquid fashion in both 3D and 2D cases. For temperatures higher than the effective bandwidth for heavy electrons T W-h*, the coherent behavior of the heavy component is totally destroyed. The heavy particles move diffusively in the surrounding of light particles. At the same time, the light particles scatter on the heavy ones as if on immobile (static) impurities. In this regime, the heavy component is marginal, while the light one is not. The resistivity saturates for T W-h* in the 3D case. In 2D, the resistivity has a maximum and a localization tail due to weak-localization corrections of the Altshuler-Aronov type [3]. Such behavior of resistivity could be relevant for some uranium-based heavy-fermion compounds like UNi2Al3 in 3D and for some other mixed-valence compounds possibly including layered manganites in 2D. We also briefly consider the superconductive (SC) instability in the model. The leading instability is towards the p-wave pairing and is governed by the enhanced Kohn-Luttinger [4] mechanism of SC at low electron density. The critical temperature corresponds to the pairing of heavy electrons via polarization of the light ones in 2D.

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Держатели документа:
Kapitza Inst Phys Problems, Moscow 119334, Russia;
Kirenskii Inst Phys, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Kagan, M. Yu.; Val'kov, V. V.; Вальков, Валерий Владимирович
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Gavrichkov, V. A.
Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density / V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
QUANTUM TEMPERATURE OSCILLATIONS
   MAGNETIC SEMICONDUCTORS
   HGCR2SE4
   RESISTIVITY
   FILMS
Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

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Публикация на русском языке Гавричков, Владимир Александрович. Особенности примесного электросопротивления в ферромагнетиках с малой концентрацией носителей [Текст] / В. А. Гавричков, С. Г. Овчинников // Физ. тверд. тела. - С.-Петербург, 1999. - Т. 41 Вып. 1. - С. 68-76

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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Conductivity study of Co3O2BO3 and Co 3-xFexO2BO3 oxyborates / N. V. Kazak [et al.] // Solid State Phenomena. - 2009. - Vol. 152-153. - P104-107, DOI 10.4028/www.scientific.net/SSP.152-153.104 . - ISSN 1012-0394
Кл.слова (ненормированные):
Doped cobaltite -- Electrical conductivity -- Ludwigite -- Variable-range hopping -- Crystal structure -- Electric conductivity -- Magnetic materials -- Single crystals -- Crystal structure -- Electric conductivity -- Magnetic materials -- Magnetism -- Single crystals -- Electrical conductivity -- Electrical resistivity -- Experimental data -- Mott variable-range hopping -- Oxyborates -- Temperature regions -- Variable-range hopping -- Doped cobaltite -- Ludwigite -- Variable range hopping -- Cobalt -- Cobalt
Аннотация: Single crystals of cobalt oxyborates Co3O2BO 3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O 2BO3 Mott's variable-range hopping conductivity clearly dominates.

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Держатели документа:
L.V. Kirensky Institute of Physics, SB of RAS, 660036, Akademgorodok, Krasnoyarsk, Russian Federation
Politechnical Institute, Siberian Federal University, Kirensky str. 26, 660074 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Kazak, N. V.; Казак, Наталья Валерьевна; Ivanova, N. B.; Иванова, Наталья Борисовна; Rudenko, V. V.; Руденко, Валерий Васильевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Vasil'Ev, A. D.; Васильев, Александр Дмитриевич; Knyazev, Yu. V.; Князев, Юрий Владимирович; Moscow International Symposium on Magnetism(4 ; 2008 ; Jun. ; Moscow)
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Dielectric properties of a mixed-valence Pb3Mn7O15 manganese oxide / N. V. Volkov [et al.] // J. Phys.: Condens. Matter. - 2010. - Vol. 22, Is. 37. - Ст. 375901, DOI 10.1088/0953-8984/22/37/375901. - Cited References: 14. - This study was supported by the Russian Foundation for Basic Research 'Siberia', project No. 09-02-98003, and the Siberian Branch of the Russian Academy of Sciences, integration project No. 101. . - ISSN 0953-8984

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
cation -- lead -- manganese derivative -- oxide -- article -- chemical model -- chemistry -- crystallization -- electric conductivity -- electronics -- methodology -- temperature -- Cations -- Crystallization -- Electric Conductivity -- Electronics -- Lead -- Manganese Compounds -- Models, Chemical -- Oxides -- Temperature -- AC electric field -- Analysis of resistivity -- Carrier hopping -- Charge ordering -- Complex dielectric constant -- Crystal site -- Debye models -- Dielectric constants -- Dielectric spectra -- Frequency windows -- Lattice sites -- Low frequency -- Manganese ions -- Mixed valence -- Mixed valence state -- Relaxation behaviors -- Temperature range -- Electric fields -- Manganese -- Manganese oxide -- Permittivity -- Single crystals -- Crystal symmetry
Аннотация: We investigated the low-frequency dielectric properties of a Pb3Mn7O15 single crystal with manganese ions in the mixed-valence state (Mn3+/Mn4+). Dielectric relaxation was found in the frequency window from 20 to 100 kHz in the temperature range 110-180 K. The dielectric spectra of the crystal were analyzed using a Debye model. Estimations made within the model and analysis of resistivity data suggest that the relaxation behavior of the dielectric constant is related to polaronic charge carrier hopping. Around 250 K, charge ordering occurs in the crystal when the Mn3+ and Mn4+ ions are arranged in a specific order among the crystal sites. With a decrease in temperature, an ac electric field can induce a charge hop between the equivalent lattice sites available, related to crystal symmetry. This hopping is equivalent to the reorientation of an electric dipole that yields Debye-type behavior of the complex dielectric constant. The observed anisotropy in the behavior of the dielectric properties and resistivity can be attributed to a pronounced two-dimensional character of the crystal structure.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Sablina, K. A.
Sapronova, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia.
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Sablina, K. A.; Саблина, Клара Александровна; Sapronova, N. V.
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Effect of Mn doping on magnetic and dielectric properties of Bi2Sn2O7 / L. V. Udod [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 105-108, DOI 10.4028/www.scientific.net/SSP.233-234.105 . - ISSN 1662-9779. - ISSN 978-3-038
Рубрики:
Achievements in magnetism
Кл.слова (ненормированные):
crystallographic structure -- cubic phase -- dielectric permeability -- electrical resistivity -- magnetic moment -- martensitic phase transitions -- orthorhombic phases -- polymorphic transformation
Аннотация: The Bi2(Sn0.95Mn0.05)2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic has been synthesized for the first time by solid-phase synthesis. The magnetic, dielectric and electrical properties of the compound have been studied. Anomalies in the temperature dependences of the electrical resistance and magnetic propoties have been found. These features are explained as martensitic phase transitions.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Eremin, E. V.; Еремин, Евгений Владимирович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
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10.

Altunin, R. R.
Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction / R. R. Altunin, E. T. Moiseenko, S. M. Zharkov // Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P. 708-713, DOI 10.1134/S1063783420040034. - Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LIGHT-EMITTING-DIODES
   PHASE-FORMATION
   AG
   AL
   DIFFUSION
   SUPPRESSION
   INTERFACE
   SURFACE
   GROWTH
   HEAT
Кл.слова (ненормированные):
thin films -- phase formation -- Al/Ag -- solid-state reaction; -- electron diffraction -- resistivity
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.

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Публикация на русском языке Алтунин Р. Р. Влияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции [Текст] / Р. Р. Алтунин, Е. Т. Моисеенко, С. М. Жарков // Физ. тверд. тела. - 2020. - Т. 62 Вып. 4. - С. 621-626

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Moiseenko, E. T.; Zharkov, S. M.; Жарков, Сергей Михайлович; Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
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