Поисковый запрос: (<.>K=SILICON<.>) |
Общее количество найденных документов : 120
Показаны документы с 1 по 10 |
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1.
| Ab initio and empirical modeling of lithium atoms penetration into silicon/N. S. Mikhaleva [et al.] // Computational Materials Science:Elsevier, 2015. т.Vol. 109.-С.76-83
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2.
| Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect/D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Materials Science in Semiconductor Processing, 2021. т.Vol. 126.- Ст.105663
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3.
| Analytic gradient for the adaptive frozen orbital bond detachment in the fragment molecular orbital method/D. G. Fedorov [et al.] // Chemical Physics Letters, 2009. т.Vol. 477,N Is. 1-3.-С.169-175
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4.
| Arc synthesis of silicon-doped heterofullerenes in plasma at atmospheric pressure/N. V. Bulina [et al.] // Fullerenes Nanotubes and Carbon Nanostructures:Marcel Dekker Inc., 2007. т.Т. 15,N № 5.-С.395-400
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5.
| Arkhipkin V. G. Effect of electromagnetically induced transparency on the spectrum of defect modes in a one-dimensional photonic crystal/V. G. Arkhipkin, S. A. Myslivets // Quantum Electronics, 2009. т.Vol. 39,N Is. 2.-С.157-162
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6.
| Atomic structure and electronic properties of beta-phase silicon nanowires/V. A. Demin [et al.] // Workshop "Trends in Nanomechanics and Nanoengineering" , 2009.-С.36
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7.
| Atomic Structure and Energetic Stability of Complex Chiral Silicon Nanowires/P. V. Avramov [et al.] // Journal of Physical Chemistry C, 2010. т.Vol. 114,N Is. 35.-С.14692-14696
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8.
| Atypical quantum confinement effect in silicon nanowires/P. B. Sorokin [et al.] // JOURNAL OF PHYSICAL CHEMISTRY A. -WASHINGTON:AMER CHEMICAL SOC, 2008. т.Vol. 112,N Is. 40.-С.9955-9964
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9.
| Avramov P. V. The role of interfaces in determination of electronic properties of complex silicon nanoclusters/P. V. Avramov // Workshop "Trends in Nanomechanics and Nanoengineering", 2009.-С.11
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10.
| Band-gap unification of partially Si-substituted single-wall carbon nanotubes/P. V. Avramov [et al.] // PHYSICAL REVIEW B:AMER PHYSICAL SOC, 2006. т.Vol. 74,N Is. 24.- Ст.245417
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