Поисковый запрос: (<.>K=Semiconductor<.>) |
Общее количество найденных документов : 126
Показаны документы с 1 по 20 |
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1.
| Lateral photovoltaic effect in silicon-based hybrid structures under external magnetic field/I. A. Bondarev, M. V. Rautskii, N. V. Volkov [et al.] // Materials Science in Semiconductor Processing, 2023. т.Vol. 167.- Ст.107786
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| Electrosound and asymmetry of the I-V characteristic induced by ultrasound in the RexMn1-xS (Re = Tm, Yb)/S. Aplesnin, M. Sitnikov, O. Romanova [et al.] // European Physical Journal Plus, 2022. т.Vol. 137,N Is. 2.- Ст.226
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| Revisiting the BaBiO3 semiconductor photocatalyst: synthesis, characterization, electronic structure, and photocatalytic activity/D. S. Shtarev, A. V. Shtareva, R. Kevorkyants [et al.] // Photochemical & Photobiological Sciences, 2021. т.Vol. 20,N Is. 9.-С.1147-1160
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| Electrical properties of the polycrystalline BiFe0.95Co0.05O3 films/O. B. Romanova, V. V. Kretinin, S. S. Aplesnin [et al.] // Physics of the Solid State, 2021. т.Vol. 63. Is. 6.-С.897-903
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| Experimental and DFT study of BaLaCuS3: Direct band gap semiconductor/A. S. Oreshonkov, N. O. Azarapin, N. P. Shestakov, S. V. Adichtchev // Journal of Physics and Chemistry of Solids, 2021. т.Vol. 148.- Ст.109670
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| Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect/D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Materials Science in Semiconductor Processing, 2021. т.Vol. 126.- Ст.105663
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| Phenomenological rule from correlations of conduction/valence band energies and bandgap energies in semiconductor photocatalysts: calcium bismuthates versus strontium bismuthates/D. S. Shtarev, V. K. Ryabchuk, A. V. Rudakova [et al.] // ChemCatChem, 2020. т.Vol. 12,N Is. 6.-С.1551-1555
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| Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect/A. S. Tarasov, A. V. Luk'yanenko, I. A. Bondarev [et al.] // Technical Physics Letters, 2020. т.Vol. 46,N Is. 7.-С.665-668
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| Probing proximity effects in the ferromagnetic semiconductor EuO/D. V. Averyanov, A. M. Tokmachev, O. E. Parfenov [et al.] // Applied Surface Science, 2019. т.Vol. 488.-С.107-114
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| Val'kov V. V. Ground-State Fermion Parity and Caloric Properties of a Superconducting Nanowire/V. V. Val'kov, V. A. Mitskan, M. S. Shustin // Journal of Experimental and Theoretical Physics, 2019. т.Vol. 129,N Is. 3.-С.426-437
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| IR-range photoinduced diode effect in the manganese-substituted bismuth ferrite films/S. S. Aplesnin [et al.] // Semiconductor Science and Technology, 2019. т.Vol. 34,N Is. 9.- Ст.095007
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| Engineering of K3YSi2O7 to Tune Photoluminescence with Selected Activators and Site Occupancy/J. Qiao [et al.] // Chemistry of Materials, 2019. т.Vol. 31,N Is. 18.-С.7770-7778
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| Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance/T. Hu [et al.] // Journal of Materials Chemistry C, 2019. т.Vol. 7,N Is. 46.-С.14594-14600
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| Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure/A. S. Tarasov [et al.] // Semiconductor Science and Technology, 2019. т.Vol. 34,N Is. 3.- Ст.035024
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| Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states/D. A. Smolyakov [et al.] // Thin Solid Films, 2019. т.Vol. 671.-С.18-21
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16.
| Effect of the Semiconductor Spacer on Positive Exchange Bias in the CoNi/Si/FeNi Three-Layer Structure/G. S. Patrin [et al.] // JETP Letters, 2019. т.Vol. 109,N Is. 5.-С.320-324
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| The influence of the semiconductor layer on the magnetic properties in a three-layer structure CoNi/Si/FeNi/A. V. Kobyakov [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019), 2019,N Vol. 1.- Ст.C.P30.-С.319
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| The role of the semiconductor layer in the exchange-bias film structure of CoNi / Si / FeNi / Si with a spin spring effect/A. V. Kobyakov [et al.] // Journal of Physics: Conference Series, 2019. т.Vol. 1389,N Is. 1.- Ст.012028
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19.
| CsCu5Se3: a copper-rich ternary chalcogenide semiconductor with nearly direct band gap for photovoltaic application/Z. Xia [et al.] // Chemistry of Materials, 2018. т.Vol. 30,N Is. 3.-С.1121-1126
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20.
| The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films/S. S. Aplesnin [et al.] // Semiconductor Science and Technology, 2018. т.Vol. 33,N Is. 8.- Ст.085006
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