Поисковый запрос: (<.>K=Semiconductors<.>) |
Общее количество найденных документов : 80
Показаны документы с 1 по 10 |
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1.
| Single crystals of EuScCuSe3: Synthesis, experimental and DFT investigations/M. V. Grigoriev, A. V. Ruseikina, V. A. Chernyshev [et al.] // Materials, 2023. т.Vol. 16,N Is. 4.- Ст.1555
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2.
| Effect of the electrical inhomogeneity on the magnetocapacitance sign change in the HoxMn1−xS semiconductors upon temperature and frequency variation/S. S. Aplesnin, M. N. Sitnikov, A. M. Kharkov, H. Abdelbaki // Journal of Materials Science: Materials in Electronics, 2023. т.Vol. 34,N Is. 4.- Ст.284
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3.
| Magnetoimpedance in manganese sulfide substituted with lutetium/M. N. Sitnikov, S. S. Aplesnin, A. M. Kharkov [et al.] // Physics of the Solid State, 2023. т.Vol. 65,N Is. 2.-С.211-217
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4.
| Phase transitions in a polycrystalline compound Ho0.1Mn0.9S/O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // Solid State Communications, 2023. т.Vol. 364.- Ст.115134
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5.
| A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs/Y. Chen, F. Liu, Z. Zhang [et al.] // Journal of Materials Chemistry C, 2022. т.Vol. 10,N Is. 18.-С.7049-7057
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6.
| Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device/D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Physica Status Solidi A - Applications and Materials Science, 2022. т.Vol. 219. Is. 1.- Ст.2100459
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7.
| Highly efficient Fe3+-doped A2 BB′O6 (A = Sr2+, Ca2+; B, B′ = In3+, Sb5+, Sn4+) broadband near-infrared-emitting phosphors for spectroscopic analysis/D. Liu, G. Li, P. Dang [et al.] // Light: Science and Applications, 2022. т.Vol. 11,N Is. 1.- Ст.112
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| Evolution of structural, thermal, optical, and vibrational properties of Sc2S3, ScCuS2, and BaScCuS3 semiconductors/N. O. Azarapin, A. S. Oreshonkov, I. A. Razumkova [et al.] // European Journal of Inorganic Chemistry, 2021. т.Vol. 2021,N Is. 33.-С.3355-3366
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9.
| Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect/D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Materials Science in Semiconductor Processing, 2021. т.Vol. 126.- Ст.105663
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10.
| Romanova O. B. Effect of electron and hole doping on the transport characteristics of chalcogenide systems/O. B. Romanova, S. S. Aplesnin, L. V. Udod // Physics of the Solid State, 2021. т.Vol. 63,N Is. 5.-С.754-757
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