Поисковый запрос: (<.>K=Semiconductors<.>) |
Общее количество найденных документов : 80
Показаны документы с 1 по 10 |
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1.
| A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs/Y. Chen, F. Liu, Z. Zhang [et al.] // Journal of Materials Chemistry C, 2022. т.Vol. 10,N Is. 18.-С.7049-7057
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2.
| Abramova G. M. Metal-insulator transition, magnetoresistance, and magnetic properties of 3d-sulfides (Review)/G. M. Abramova, G. A. Petrakovskii // Low Temperature Physics, 2006. т.Vol. 32,N Is. 8-9.-С.725-734;Физика низких температур
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3.
| Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect/D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Materials Science in Semiconductor Processing, 2021. т.Vol. 126.- Ст.105663
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4.
| Alekseev K. N. Direct-current generation due to wave mixing in semiconductors/K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhysics Letters, 1999. т.Vol. 47,N Is. 5.-С.595-600
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5.
| Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance/T. Hu [et al.] // Journal of Materials Chemistry C, 2019. т.Vol. 7,N Is. 46.-С.14594-14600
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6.
| Aplesnin S. S. Conductivity of HoxMn1-xS magnetic semiconductors with orbital ordering/S. S. Aplesnin, M. N. Sitnikov // Internnational conference "Spin physics, spin chemistry, and spin technology", 2015.-С.47
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| Aplesnin S. S. Magnetoresistance effect in anion-substituted manganese chalcogenides/S. S. Aplesnin, O. B. Romanova, K. I. Yanushkevich // Physica status solidi B - Basic Solid State Physics, 2015. т.Vol. 252,N Is. 8.-С.1792-1798
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8.
| Atomic layer deposition ZnO on porous Al2O3 nanofibers film/A. S. Voronin, A. N. Masiygin, M. S. Molokeev, S. V. Khartov // Journal of Physics: Conference Series, 2020. т.Vol. 1679,N Is. 2.- Ст.022072
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9.
| BATIYEV E. G. SUPERCONDUCTIVITY IN MULTI-VALLEY SEMICONDUCTORS/E. G. BATIYEV, V. A. BORISYOUK // ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI:MEZHDUNARODNAYA KNIGA, 1986. т.Vol. 90,N Is. 2.-С.558-568
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10.
| Berzhanskii V. N. Photo-excited charge carrier mobility in magnetic p-type semiconductors on CDCR2SE4 bases/V. N. Berzhanskii, V. K. Chernov // Fizika Tverdogo Tela, 1980. т.Vol. 22,N Is. 10.-С.3179-3181
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