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    Аверьянов, Евгений Михайлович.
    Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных / Е. М. Аверьянов // Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2020.1.41. - Библиогр.: 7 . - ISSN 1991-3966
   Перевод заглавия: New methods for studying the orientation order of uniaxial molecular films on the base of optical data
Кл.слова (ненормированные):
тонкие молекулярные пленки -- органические полупроводники -- PTCDA -- ориентационный порядок -- эффекты локального поля -- molecular thin films -- organic semiconductors -- PTCDA -- orientation order -- local-field effects
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).
The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.

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Держатели документа:
Институт физики им. Л. В. Киренского, ФИЦ КНЦ СО РАН, Академгородок, 50, строение № 38, 660036 Красноярск, Россия

Доп.точки доступа:
Aver'yanov, E. M.

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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides / S. S. Aplesnin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 4. - P. 765-772, DOI 10.1134/S1063776108040158. - Cited References: 39 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GIANT VOLUME MAGNETOSTRICTION
   COLOSSAL MAGNETORESISTANCE
   MAGNETIC SEMICONDUCTORS
   ELECTRICAL-PROPERTIES
   ROOM-TEMPERATURE
   ALPHA-MNS
   SPINTRONICS
   TRANSITION
   FEXMN1-XS
   FIELDS
Кл.слова (ненормированные):
Coulomb interactions -- Current voltage characteristics -- Electromotive force -- Ferromagnetism -- Magnetic susceptibility -- Magnetization -- Thermoelectricity -- Transport properties -- Charge susceptibility -- External magnetic fields -- Temperature intervals -- Thermoelectromotive force -- Cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0 <= x <= 0.4). Anomalies in the transport properties of these compounds have been found in the temperature intervals Delta T-1 = 200-270 K and Delta T-2 = 530-670 K and at T-3 similar to T-N. The temperature dependences of the magnetic susceptibility, magnetization, and resistivity, as well as the current-voltage characteristics, exhibit hysteresis. In the domain of magnetic ordering at temperatures below the Neel temperature (TN), the anti ferromagnetic CoxMn1 - xS sulfides possess a spontaneous magnetic moment that is explained using a model of the orbital ordering of electrons in the t(2g) bands. The influence of the cobalt-ion-induced charge ordering on the transport and magnetic properties of sulfides has been studied. The calculated values of the temperatures corresponding to the maxima of charge susceptibility, which are related to a competition between the on-site Coulomb interaction of holes in various subbands and their weak hybridization, agree well with the experimental data.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Velikanov, D. A.
Balaev, A. D.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Aplesnin, S. S.
Bandurina, O. N.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Yanushkevich, K. I.
Galyas, A. I.
Demidenko, O. F.] Natl Acad Sci, Joint Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Yanushkevich, K. I.; Galyas, A. I.; Demidenko, O. F.; Bandurina, O. N.
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Bikbaev, R. G.
Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons / R. G. Bikbaev, S. Ya Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P. 2817-2823, DOI 10.1364/JOSAB.36.002817. - Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006. . - ISSN 0740-3224
Кл.слова (ненормированные):
Aluminum oxide -- II-VI semiconductors -- Indium compounds -- Infrared devices -- Optical films -- Phonons -- Photons -- Plasmons -- Q factor measurement -- Tin oxides -- Transfer matrix method -- Transparent conducting oxides -- Zinc oxide
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович
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Mikhaleva, N. S.
Theoretical investigation of NiI2 based bilayer heterostructures / N. S. Mikhaleva, M. A. Visotin, Z. I. Popov // Key Eng. Mater. - 2019. - Vol. 806 KEM. - P. 10-16, DOI 10.4028/www.scientific.net/KEM.806.10. - Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Кл.слова (ненормированные):
2D semiconductors -- Ab initio calculations -- Heterostructures -- NiI2 -- Transition metal dichalcogenides
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland

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Держатели документа:
Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation
L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology “MISiS”, Leninsky pr. 4, Moscow, 119049, Russian Federation

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Popov, Z. I.; Попов, Захар Иванович; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok)
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Erukhinov, M. S.
The S-D(f)-hybridization effect on light-absorption in impurity magnetic semiconductors / M. S. Erukhinov // Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P. 1660-1665. - Cited References: 12 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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The magnetoelastic effect in CoxMn1-xS solid solutions / S. S. Aplesnin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 564-567, DOI 10.1016/j.ssc.2010.01.009. - Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a. . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
YVO3 SINGLE-CRYSTAL
   SPIN-STATE
   TRANSITION
   TRANSPORT
   PHYSICS
   LACOO3
Кл.слова (ненормированные):
Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Coefficient of thermal expansion -- Magnetoelastic effects -- Orbital ordering -- Temperature hysteresis -- Temperature range -- Zero magnetic fields -- Crystallization -- Electric resistance -- Magnetic field effects -- Magnetoresistance -- Manganese -- Manganese compounds -- Neon -- Organic polymers -- Scattering -- Semiconductor quantum dots -- Solid solutions -- Solidification -- Thermal stress -- X ray scattering -- Thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H < 0.1 T and at T < 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Har'kov, A. M.] MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
[Gorev, M. V.
Balaev, A. D.
Eremin, E. V.
Bovina, A. F.] Russian Acad Sci, KSC Siberian Branch, Ctr Shared, Krasnoyarsk 660036, Russia
КНЦ СО РАН
M.F. Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation
Center of shared using KSC Siberian branch, Russian Academy Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Gorev, M. V.; Горев, Михаил Васильевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Eremin, E. V.; Еремин, Евгений Владимирович; Bovina, A. F.; Бовина, Ася Федоровна
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Synthesis of ferromagnetic germanides in 40Ge/60Mn films: Magnetic and structural properties / V. G. Myagkov [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 167-172, DOI 10.4028/www.scientific.net/SSP.215.167. - Cited References: 28 . - ISSN 978-30383. - ISSN 1662-9779
Кл.слова (ненормированные):
Diluted semiconductors -- Manganese germanides -- Solid-state reactions -- Spinodal decomposition
Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~120 °C, the ferromagnetic Mn5Ge phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5GeXCxOy. The initiation temperature (~120 °C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors. © (2014) Trans Tech Publications, Switzerland.

Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Myagkov, V. G.; Мягков, Виктор Григорьевич; Matsunin, A. A.; Мацынин, Алексей Александрович; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
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Synthesis and magnetic and electrical study of TmxMn1–xS solid solutions / O. B. Romanova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2016. - Vol. 80, Is. 6. - P. 679-681, DOI 10.3103/S1062873816060265. - Cited References: 12 . - ISSN 1062-8738
Кл.слова (ненормированные):
Activation energy -- Magnetism -- Temperature distribution -- Antiferromagnetic semiconductors -- Electrical studies -- FCC lattice -- Magnetic transitions -- NaCl type -- Temperature dependence of resistivities -- Manganese
Аннотация: New antiferromagnetic semiconductor compounds TmxMn1–xS (0 ≤ x ≤ 0.15) with an NaCl-type FCC lattice are synthesized, and their structural, magnetic, and electrical properties are investigated at temperatures of 80–1100 K in magnetic fields of up to 10 kOe. Anomalies in the temperature dependence of resistivity in the region of magnetic transition are observed. The activation energy of the synthesized compounds is found and shown to grow along with the concentration of a substitute.

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Публикация на русском языке Синтез, магнитные и электрические исследования твердых растворов TmxMn1-xS [Текст] / О. Б. Романова [и др.] // Изв. РАН. Сер. физ. - 2016. - Т. 80 № 6. - С. 748

Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Yanushkevich, K. I.; Sokolov, V. V.; Соколов В.В.
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10.

BORISYOUK, V. A.
SUPERRADIATIVE PHASE-TRANSITIONS IN SEMICONDUCTORS AND SEMIMETALS / V. A. BORISYOUK // Zhurnal Eksperimentalnoi Teor. Fiz. - 1990. - Vol. 97, Is. 6. - P. 1882-1891. - Cited References: 37 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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