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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Аверьянов, Евгений Михайлович
Заглавие : Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных
Место публикации : Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46. - ISSN 1991-3966, DOI 10.18083/LCAppl.2020.1.41; Liq. Cryst. Appl.
Примечания : Библиогр.: 7
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bikbaev R. G., Vetrov S. Ya., Timofeev I. V.
Заглавие : Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons
Место публикации : J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P.2817-2823. - ISSN 07403224 (ISSN), DOI 10.1364/JOSAB.36.002817
Примечания : Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006.
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.
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Вид документа : Статья из сборника (выпуск монографической серии)
Шифр издания :
Автор(ы) : Mikhaleva N. S., Visotin M. A., Popov Z. I.
Заглавие : Theoretical investigation of NiI2 based bilayer heterostructures
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials
Место публикации : Key Eng. Mater. - 2019. - Vol. 806 KEM. - P.10-16. - , DOI 10.4028/www.scientific.net/KEM.806.10
Примечания : Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Erukhinov M. S.
Заглавие : The S-D(f)-hybridization effect on light-absorption in impurity magnetic semiconductors
Место публикации : Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P.1660-1665. - ISSN 0367-3294
Примечания : Cited References: 12
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Har'kov A. M., Gorev M. V., Balaev A. D., Eremin E. V., Bovina A. F.
Заглавие : The magnetoelastic effect in CoxMn1-xS solid solutions
Коллективы :
Разночтения заглавия :авие SCOPUS: The magnetoelastic effect in Cox Mn1 - x S solid solutions
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 2010. - Vol. 150, Is. 13-14. - P564-567. - ISSN 0038-1098, DOI 10.1016/j.ssc.2010.01.009
Примечания : Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a.
Предметные рубрики: YVO3 SINGLE-CRYSTAL
SPIN-STATE
TRANSITION
TRANSPORT
PHYSICS
LACOO3
Ключевые слова (''Своб.индексиров.''): semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--coefficient of thermal expansion--magnetoelastic effects--orbital ordering--temperature hysteresis--temperature range--zero magnetic fields--crystallization--electric resistance--magnetic field effects--magnetoresistance--manganese--manganese compounds--neon--organic polymers--scattering--semiconductor quantum dots--solid solutions--solidification--thermal stress--x ray scattering--thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H 0.1 T and at T 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Matsunin A. A., Mikhlin Y. L., Zhigalov V. S., Bykova L. E., Tambasov I. A., Bondarenko G. N., Patrin G. S., Velikanov D. A.
Заглавие : Synthesis of ferromagnetic germanides in 40Ge/60Mn films: Magnetic and structural properties
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed. S. G. Ovchinnikov: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.167-172. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.167. - ISSN 1662-9779
Примечания : Cited References: 28
Ключевые слова (''Своб.индексиров.''): diluted semiconductors--manganese germanides--solid-state reactions--spinodal decomposition
Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~120 °C, the ferromagnetic Mn5Ge phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5GeXCxOy. The initiation temperature (~120 °C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors. © (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Yanushkevich K. I., Sokolov V. V.
Заглавие : Synthesis and magnetic and electrical study of TmxMn1–xS solid solutions
Место публикации : Bull. Russ. Acad. Sci. Phys.: Allerton Press Incorporation, 2016. - Vol. 80, Is. 6. - P.679-681. - ISSN 10628738 (ISSN), DOI 10.3103/S1062873816060265
Примечания : Cited References: 12
Ключевые слова (''Своб.индексиров.''): activation energy--magnetism--temperature distribution--antiferromagnetic semiconductors--electrical studies--fcc lattice--magnetic transitions--nacl type--temperature dependence of resistivities--manganese
Аннотация: New antiferromagnetic semiconductor compounds TmxMn1–xS (0 ≤ x ≤ 0.15) with an NaCl-type FCC lattice are synthesized, and their structural, magnetic, and electrical properties are investigated at temperatures of 80–1100 K in magnetic fields of up to 10 kOe. Anomalies in the temperature dependence of resistivity in the region of magnetic transition are observed. The activation energy of the synthesized compounds is found and shown to grow along with the concentration of a substitute.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : BORISYOUK V. A.
Заглавие : SUPERRADIATIVE PHASE-TRANSITIONS IN SEMICONDUCTORS AND SEMIMETALS
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1990. - Vol. 97, Is. 6. - P1882-1891. - ISSN 0044-4510
Примечания : Cited References: 37
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