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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Yang X., Chen W., Wang D., Chai X., Xie G., Xia Z., Molokeev M. S., Liu Y., Lei B.
Заглавие : Near-infrared photoluminescence and phosphorescence properties of Cr3+-Doped garnet-type Y3Sc2Ga3O12
Место публикации : J. Lumin. - 2020. - Vol. 225. - Ст.117392. - ISSN 00222313 (ISSN), DOI 10.1016/j.jlumin.2020.117392
Примечания : Cited References: 26. - The present work was supported by the National Natural Science Foundations of China (Grant No. 21671070); the Project of GDUPS (2018) for Prof. Bingfu LEI; the Guangzhou Science & Technology Project, China (No. 201704030086); and the National Undergraduate Innovation and Entrepreneurship Training Program granted for Gening Xie (No. 201910564035)
Аннотация: Garnet-type Y3Sc2Ga3O12:Cr3+ phosphor has been synthesized by a solid-state reaction. XRD result revealed the successful phase formation and Cr3+ doping in Y3Sc2Ga3O12. The excitation spectrum at about 260, 450, and 630 nm corresponded to three spin-allowed Cr3+ d-d intra-transitions of 4A2-4T1 (4P), 4A2-4T1 (4F), and 4A2-4T2 (4F), respectively, among which the near infrared (NIR) emission peak at around 740 nm is identified. Moreover, the phosphorescence emission property, thermoluminescence and related luminescence mechanisms are discussed as well. The fabricated NIR phosphor-converted light-emitting diodes (pc-LEDs) suggest its potential of Y3Sc2Ga3O12:Cr3+ phosphor for non-visible light source application.
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