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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Cheng, Lian, Liu, Kai, Wang, Mengqi, Fan, Pengyuan, Zhou, Changrong, Vtyurin A. N., Deng, Heming, Zhang, Ling, Zhang, Haibo, Hu, Yongming, Nan, B.o., Liu, Yang
Заглавие : Improvement of dielectric properties and energy storage performance in sandwich-structured P(VDF-CTFE) composites with low content of GO nanosheets
Место публикации : Nanotechnology. - 2021. - Vol. 32, Is. 42. - Ст.425702. - ISSN 0957-4484, DOI 10.1088/1361-6528/ac1295. - ISSN 1361-6528(eISSN)
Примечания : Cited References: 56. - The authers gratefully acknowledge the support by the National Natural Science Foundation of China: 51902111; DongGuan Innovation Research Team Program: 2020607101007; Dongguan Postgraduate Joint Training (Practice) Workstation: 2019707102018; Guangdong HUST Industrial Technology Research Institute, Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization: 2020B1212060014
Предметные рубрики: CHARGE-DISCHARGE EFFICIENCY
POLYMER NANOCOMPOSITES
BREAKDOWN STRENGTH
Аннотация: Polymer-based dielectric capacitors play a notable part in the practical application of energy storage devices. Graphene oxide (GO) nanosheets can improve the dielectric properties of polymer-based composites. However, the breakdown strength will greatly reduce with the increase of GO content. Hence, the construction of sandwich structure can enhance the breakdown strength without reducing the dielectric constant. Herein, single-layered and sandwich-structured poly(vinylidene fluoride-co-chlorotrifluoroethylene) (P(VDF-CTFE)) nanocomposites with low content of GO nanosheets (1.0 wt%) are prepared via employing a straightforward casting method. Compared with the single-layered composites and pure P(VDF-CTFE), the sandwich-structured composites exhibit comprehensively better performance compared. The sandwich-structured composite with 0.4 wt% GO nanosheets show an excellent dielectric constant of 13.6 (at 1 kHz) and an outstanding discharged energy density of 8.25 J cm−3 at 3400 kV cm−1. These results demonstrate that the growth of the dielectric properties is owing to 2D GO nanosheets and the enhancement of breakdown strength due to the sandwich structure. The results from finite element simulation provide theoretical support for the design of high energy density composites.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kholtobina A. S., Kovaleva E. A., Melchakova J., Ovchinnikov S. G., Kuzubov A. A.
Заглавие : Theoretical investigation of the prospect to tailor ZnO electronic properties with VP thin films
Место публикации : Nanomaterials. - 2021. - Vol. 11, Is. 6. - Ст.1412. - ISSN 20794991 (ISSN), DOI 10.3390/nano11061412
Примечания : Cited References: 75. - This research was funded by the Russian Science Foundation, grant number 20-73-00179. The authors would like to thank the Information Technology Centre, Novosibirsk State University for providing access to their supercomputers
Аннотация: The atomic and electronic structure of vanadium phosphide one-to four-atomic-layer thin films and their composites with zinc oxide substrate are modelled by means of quantum chemistry. Favorable vanadium phosphide to ZnO orientation is defined and found to remain the same for all the structures under consideration. The electronic structure of the composites is analyzed in detail. The features of the charge and spin density distribution are discussed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zharkov S. M., Altunin R. R., Yumashev V. V., Moiseenko E. T., Belousov O. V., Solovyov L. A., Volochaev M. N., Zeer G. M.
Заглавие : Kinetic study of a solid-state reaction in Ag/Al multilayer thin films by in situ electron diffraction and simultaneous thermal analysis
Коллективы : Russian Science Foundation, RussiaRussian Science Foundation (RSF) [181300 080]
Место публикации : J. Alloys Compd. - 2021. - Vol. 871. - Ст.159474. - ISSN 0925-8388, DOI 10.1016/j.jallcom.2021.159474. - ISSN 1873-4669(eISSN)
Примечания : Cited References: 47. - This work was supported by the Russian Science Foundation, Russia under grant #181300 080
Предметные рубрики: STRUCTURAL PHASE-TRANSFORMATIONS
COMMITTEE RECOMMENDATIONS
ICTAC KINETICS
Аннотация: A solid-state reaction process in Ag/Al multilayer thin films has been investigated by the methods of in situ electron diffraction, simultaneous thermal analysis, transmission electron microscopy and X-ray diffraction with the aim of studying the phase formation kinetics of intermetallic compounds. The sequence of the phase transformations in the solid-state reaction has been established: Ag+Al→(Ag)+(Al)→(Ag)+δ-Ag2Al→μ-Ag3Al. The process of the solid-state interaction has been shown to consist of two steps; each of them is described by a kinetic model of the nth order reactions with autocatalysis. The kinetic parameters of the autocatalytic process of the phase formation for δ-Ag2Al and µ-Ag3Al, have been determined, in particular, their apparent activation energy: 126 kJ/mol and 106 kJ/mol, respectively.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shvets P., Shabanov A. V., Maksimova K., Goikhman A.
Заглавие : Micro-Raman mapping of VO2 (T) microcrystals orientation
Место публикации : Vib. Spectrosc. - 2022. - Vol. 118. - Ст.103328. - ISSN 09242031 (ISSN), DOI 10.1016/j.vibspec.2021.103328
Примечания : Cited References: 38. - This work was prepared with support from Ministry of Science and Higher Education of the Russian Federation (project FZWM-2020-0008)
Аннотация: Microcrystals orientation distribution in triclinic vanadium dioxide VO2 (T) films was investigated by polarized Raman scattering with a resolution of few ?m and confirmed by electron backscatter diffraction. Euler angles used to describe the orientation of the crystal were determined by two different techniques and good agreement between the values was achieved. Finally, it was demonstrated that Raman scattering could be used to identify the direction of the lattice vector c for (002) crystals in consequence of the triclinic nature of VO2 (T)
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Назарова З. И., Назаров А. Н.
Заглавие : Прогнозирование образования конкурирующих фаз при росте тонких плёнок Cr2GaC на MgO(111)
Место публикации : Сиб. аэрокосм. журн. - 2021. - Т. 22, № 2. - С. 383-390. - ISSN 2712-8970, DOI 10.31772/2712-8970-2021-22-2-383-390
Примечания : Библиогр.: 15. - Исследования выполняются при финансовой поддержке Российского фонда фундаментальных исследований, Правительства Красноярского края, Красноярского краевого фонда науки в рамках научного проекта № 20-42-240012, Правительства РФ в рамках гранта по созданию лабораторий мирового уровня (соглашение № 075-15-2019-1886)
Аннотация: MAX-фазы представляют собой семейство тройных слоистых соединений с формальной стехиометрией Mn+1AXn (n = 1, 2, 3…), где М – переходный d-металл; А – p-элемент (например, Si, Ge, Al, S, Sn и др.); Х – углерод или азот [1]. Слоистые тройные карбиды и нитриды d- и p-элементов (MAX-фазы) проявляют уникальное сочетание свойств, характерных как для металлов, так и для керамики, что делает их применение перспективным в космической отрасли в качестве различных покрытий. Получение требуемых свойств MAX-фаз зависит от технологических условий синтеза материала. Для этого необходимо тщательное теоретическое моделирование взаимодействия элементов на границе раздела. Одновременный рост конкурирующих фаз наряду с MAX-фазой может происходить из-за выгодности образования конкурирующих фаз, а также из-за более низко-энергетического интерфейса с подложкой по сравнению с MAX-фазой. В данной работе мы изучаем термодинамическую выгодность конкурирующих фаз и MAX-фазы Cr2GaC в зависимости от химического состава потока атомов. Для изучения этих соединений было необходимо рассмотреть систему Cr-Ga-C. Согласно модели эффективной теплоты образования каждую реакцию образования некоторой фазы можно охарактеризовать энтальпией [2]. Для выяснения наиболее вы-годных к формированию фаз было необходимо произвести расчёт энтальпии для всех возможных реакций. Таким образом, задача состояла в переборе всех возможных реакций между чистыми элементами, доступными в различных соотношениях, в частности, в соотношении, соответствующем заданной стехиометрии MAX-фазы, т. е. Cr:Ga:C=2:1:1. Кроме того, считается, что плотность совпадающих узлов [3; 4] для границ раздела между MAX-фазой, термодинамически выгодными конкурирующими фазами и поверхностью MgO(111) показывает роль интерфейса при определении структурного качества тонкой плёнки MAX-фазы, выращенной на MgO(111).MAX-phases are a family of ternary layered compounds with the formal stoichiometry Mn+1AXn (n = 1, 2, 3...), where M is a transition d-metal; A is a p-element (for example, Si, Ge, Al, S, Sn, etc.); X is carbon or nitrogen [1]. Layered triple carbides and nitrides of d-and p-elements (MAX-phases) exhibit a unique combination of properties characteristic of both metals and ceramics, which makes their application as various coatings in space industry very promising. Obtaining the desired properties of the MAX-phases depends on the technological conditions of material synthesis. This requires thorough theoretical modelling of the elements’ interaction at the interface. Concurrent growth of competing phases along with the MAX-phase may occur due to the favorability of the formation of competing phases and also be promoted by lower energy interfaces with the substrate in comparison with a MAX-phase. In this work, we study thermodynamic favorability of competing phases and Cr2GaC MAX-phase depending on the chemical composition of the atomic flow. To study these compounds, it was necessary to consider the Cr-Ga-C system. According to the effective heat of formation model, each reaction of the formation of a certain phase can be characterized by enthalpy [2]. To find out the most favorable phases, it was necessary to calculate the enthalpy of all possible reactions. Thus, the task was to sort through all possible reactions between pure elements available in various ratios, in particular, in the ratio corresponding to the given MAX-phase stoichiometry, i.e. Cr:Ga:C=2:1: 1. Moreover, it is considered that the density of near-coincidence sites [3,4] for interfaces between MAX-phase, thermodynamically favourable competing phases and MgO(111) surface shows a role of the interface in the determination of the structural quality of the MAX-phase thin film grown on MgO(111).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vyzulin S. A., Syr'ev N. E., Skomorokhov G. V.
Заглавие : Ferromagnetic resonance in thin films of FexNi100−x
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2021. - Vol. 85, Is. 9. - P.1012-1015. - ISSN 10628738 (ISSN), DOI 10.3103/S106287382109032X
Примечания : Cited References: 9
Аннотация: Magnetic resonance characteristics of FexNi100–x nanometer film systems are investigated. It is shown experimentally that Kittel’s theory of uniform ferromagnetic resonance in thin single-layer FexNi100−x film structures might be invalid.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Masyugin A. N., Kretinin V. V., Konovalov S. O., Shestakov N. P.
Заглавие : Magnetoresistance and IR spectrum of impurity states in the Ce3Fe5O12 film
Место публикации : Phys. Solid State. - 2021. - Vol. 63, Is. 2. - P.242-247. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783421020025
Примечания : Cited References: 28. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-240001 “Inversion of the Sign of Magnetoelectric Tensor Components with Temperature in the Neodymium-Doped Bismuth Iron Garnet Films”
Аннотация: In polycrystalline cerium iron garnet films, the gap in the electron excitation spectrum and electronic transitions between di- and tetravalent iron and cerium impurity ions have been established from the IR absorption spectra. The temperatures of delocalization of the ferrous states of iron have been found from the impedance spectroscopy, electrical resistance, and IR spectroscopy data. The difference between the ac and dc magnetoresistances has been established and explained using a model of a dielectrically inhomogeneous medium.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Voronin A. S., Evsevskaya N. P., Kuznetsov, Yu M., Luk'yanenko A. V., Tambasova E. V., Gornakov M. O., Dorokhin, M., V, Loginov, Yu Yu
Заглавие : Experimental study of the thermal conductivity of single-walled carbon nanotube-based thin films
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of the Krasnoyarsk Territory; Krasnoyarsk Territorial Foundation for Support of Scientific and RD Activity [18-42-243010]; Russian FederationRussian Federation [SP-2235.2019.1]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 6. - P.1090-1094. - ISSN 1063-7834, DOI 10.1134/S1063783420060311. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 21. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activity, project Study of the Thermal Conductivity and Structural Features in Nanostructured Oxide Thin Films Promising for Thermoelectric Applications no. 18-42-243010 and the Scholarships of the President of the Russian Federation (SP-2235.2019.1).
Предметные рубрики: THERMOELECTRIC PROPERTIES
TRANSPORT-PROPERTIES
Аннотация: The single-walled carbon nanotube-based thin films with a thickness from 11 ± 3 to 157 ± 18 nm have been formed using vacuum filtration. The thermal conductivity of the thin films as a function of thickness and temperature up to 450 K has been studied by the 3ω technique. It has been found that, in the region of 49 nm, the supplied heat from a gold strip started propagating with the high efficiency to the thin film plane. The thermal conductivity of the thin films with a thickness of 49 ± 8 nm was measured using the 3ω technique for bulk samples. It has been found that the thermal conductivity of the single-walled carbon nanotube-based thin films strongly depends on their thickness and temperature. The thermal conductivity sharply (by a factor of ~60) increases with an increase in thickness from 11 ± 3 to 65 ± 4 nm. In addition, it has been observed that the thermal conductivity of the thin film with a thickness of 157 ± 18 nm rapidly decreases from 211 ± 11 to 27.5 ± 1.4 W m–1 K–1 at 300 and 450 K, respectively.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhigalov V. S., Bykova L. E., Myagkov V. G., Pavlova A. N., Volochaev M. N., Matsynin A. A., Patrin G. S.
Заглавие : CoPt-Al2O3 nanocomposite films: synthesis, structure, and magnetic properties
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-243009 r_mol_a, 19-43-240003 r_a]; Foundation for Assistance to Small Innovative Enterprises in Science and Technology [11843GU/2017, 0033636]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 1. - P.47-53. - ISSN 1027-4510, DOI 10.1134/S102745102001022X. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects no. 18-42-243009 r_mol_a and no. 19-43-240003 r_a, and the Foundation for Assistance to Small Innovative Enterprises in Science and Technology, contract no. 11843GU/2017, code 0033636, U.M.N.I.K. competition.
Предметные рубрики: SOLID-STATE SYNTHESIS
GRANULAR THIN-FILMS
THERMITE SYNTHESIS
PHASE
Аннотация: The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H ˃ Hc).
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